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ISC011N03L5S [INFINEON]

凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。;
ISC011N03L5S
型号： ISC011N03L5S
厂家： Infineon    Infineon
描述：

凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。
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ISC011N03L5S  
MOSFET  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
SuperSO8  
5
8
6
7
7
Features  
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀBuckꢀconverter  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
4
3
1
2
2
3
1
4
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
S 1  
8 D  
7 D  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
S 2  
S 3  
G 4  
Parameter  
Value  
Unit  
6 D  
5 D  
VDS  
30  
V
RDS(on),max  
ID  
1.1  
100  
40  
mΩ  
A
QOSS  
nC  
nC  
QG(0V..10V)  
72  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISC011N03L5S  
PG-TDSON-8  
011N03L5  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
-
-
100  
100  
100  
100  
37  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)  
Pulsed drain current2)  
ID,pulse  
IAS  
-
-
-
-
-
400  
50  
A
TC=25ꢀ°C  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
-
A
TC=25ꢀ°C  
EAS  
VGS  
-
190  
20  
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
-20  
-
-
-
-
-
96  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
-
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJC  
-
1.3  
K/W  
K/W  
-
-
Thermal resistance, junction - case,  
top  
-
-
-
-
20  
50  
Device on PCB,  
RthJA  
K/W  
-
6 cm2 cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
30  
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
1.2  
2
VDS=VGS,ꢀID=250ꢀµA  
-
-
0.1  
10  
1
100  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.1  
0.9  
1.4  
1.1  
VGS=4.5ꢀV,ꢀID=30ꢀA  
VGS=10ꢀV,ꢀID=30ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
0.6  
-
-
Ω
-
Transconductance  
85  
170  
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
4700  
1500  
220  
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
6.7  
8.8  
37  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
6.2  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
11  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
7.5  
10.3  
14  
Qsw  
Gate charge total  
Qg  
36  
Gate plateau voltage  
Gate charge total  
Vplateau  
Qg  
2.4  
72  
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge  
Qg(sync)  
Qoss  
29  
40  
VDD=15ꢀV,ꢀVGS=0ꢀV  
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
96  
384  
1
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
Qrr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.8  
20  
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs  
Reverse recovery charge  
-
nC  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
120  
120  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
0
40  
80  
120  
160  
0
40  
80  
120  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
1 µs  
10 µs  
102  
100  
100 µs  
0.5  
1 ms  
10 ms  
0.2  
0.1  
101  
10-1  
0.05  
DC  
0.02  
0.01  
single pulse  
100  
10-2  
10-1  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
800  
2.0  
10 V  
5 V  
4.5 V  
4 V  
700  
600  
500  
400  
300  
200  
100  
0
3.2 V  
1.5  
3.5 V  
3.5 V  
4 V  
4.5 V  
5 V  
1.0  
7 V  
8 V  
10 V  
3.2 V  
3 V  
0.5  
0.0  
2.8 V  
0
1
2
3
0
10  
20  
30  
40  
50  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
400  
350  
300  
250  
200  
150  
100  
50  
320  
240  
160  
80  
150 °C  
25 °C  
0
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
3.0  
2.5  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
150 °C  
Ciss  
102  
101  
100  
Coss  
103  
Crss  
102  
0
10  
20  
30  
0.0  
0.5  
1.0  
1.5  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
15 V  
24 V  
10  
8
6 V  
25 °C  
100 °C  
125 °C  
101  
6
4
2
100  
0
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
70  
80  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
34  
32  
30  
28  
26  
24  
22  
20  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00003332  
REVISION  
07  
MILLIMETERS  
DIMENSION  
MIN.  
0.90  
0.15  
0.34  
4.80  
3.90  
0.03  
5.70  
5.90  
3.88  
MAX.  
1.20  
0.35  
0.54  
5.35  
4.40  
0.23  
6.10  
6.42  
4.31  
SCALE 10:1  
A
A1  
b
3mm  
0
1
2
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
L
0.45  
0.45  
0.71  
0.69  
ISSUE DATE  
06.06.2019  
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV  
ISC011N03L5S  
PG-TDSON-8: Recommended Boardpads & Apertures  
1.905  
1.905  
1.27  
3x  
0.6  
1.27  
3x  
0.5  
1.6  
0.2  
1.5  
0.5  
1.27  
3x  
1.27  
3x  
0.4  
1.905  
1.905  
copper  
solder mask  
stencil apertures  
all dimensions in mm  
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2020-02-20  
OptiMOSTM Power-MOSFET , 30 V  
ISC011N03L5S  
Dimension in mm  
Figure 3 Outline Tape (TDSON-8)  
Final Data Sheet  
12  
Rev. 2.0, 2020-02-20  
OptiMOSTM Power-MOSFET , 30 V  
ISC011N03L5S  
Revision History  
ISC011N03L5S  
Revision: 2020-02-20, Rev. 2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2020-02-20  
Trademarks  
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With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the  
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation  
warranties of non-infringement of intellectual property rights of any third party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this  
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the  
product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s  
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product  
information given in this document with respect to such application.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or  
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a  
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and  
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Final Data Sheet  
13  
Rev. 2.0, 2020-02-20  

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