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ISC015N04NM5 [INFINEON]

凭借正常电平 OptiMOSTM 5 40V 产品系列，英飞凌为需要正常电平（更高阈值电压）驱动能力的应用提供基准解决方案。;
ISC015N04NM5
型号： ISC015N04NM5
厂家： Infineon    Infineon
描述：

凭借正常电平 OptiMOSTM 5 40V 产品系列，英飞凌为需要正常电平（更高阈值电压）驱动能力的应用提供基准解决方案。

驱动
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ISC015N04NM5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
TDSON-8ꢀFLꢀ(enlargedꢀsourceꢀinterconnection)  
8
7
6
5
Features  
•ꢀBatteryꢀpoweredꢀapplication  
•ꢀLVꢀmotorꢀdrives  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀ175ꢀ°Cꢀrated  
1
5
2
6
7
3
4
8
4
3
2
1
S 1  
S 2  
S 3  
G 4  
8 D  
7 D  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
6 D  
5 D  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
40  
V
RDS(on),max  
ID  
1.5  
206  
54  
mΩ  
A
Qoss  
nC  
nC  
QG(0V..10V)  
51  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISC015N04NM5  
TDSON-8 FL  
15N04NM5  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=7ꢀV,ꢀTC=25ꢀ°C  
-
-
-
-
-
-
-
-
-
-
206  
145  
188  
133  
33  
Continuous drain current1)  
ID  
A
VGS=7ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=50ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
824  
220  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
115  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=50ꢀ°C/W2)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
-
-
-
1.3  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
20  
50  
Device on PCB,  
6 cm² cooling area  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental  
conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
40  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=60ꢀµA  
2.2  
3.4  
-
-
0.1  
10  
1
100  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.2  
1.4  
1.5  
1.8  
VGS=10ꢀV,ꢀID=50ꢀA  
VGS=7ꢀV,ꢀID=50ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
-
0.9  
1.3  
-
Ω
-
Transconductance  
210  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
3700 4800 pF  
1690 2200 pF  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
130  
10  
230  
-
pF  
ns  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=1.6ꢀΩ  
5
-
-
-
ns  
ns  
ns  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
20  
6
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
16  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
11  
-
9
14  
-
Qsw  
15  
Gate charge total1)  
Qg  
51  
67  
-
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge  
Vplateau  
Qg(sync)  
Qoss  
4.2  
46  
-
nC  
nC  
54  
-
VDD=20ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
115  
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
824  
A
TC=25ꢀ°C  
Diode forward voltage  
0.84  
21  
59  
1
-
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C  
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
-
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
120  
240  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
40  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
0.02  
1 µs  
10 µs  
0.05  
10 ms  
102  
0.1  
0.2  
0.5  
100 µs  
100  
10-1  
10-2  
101  
100  
1 ms  
DC  
10-1  
10-2  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
400  
4.0  
4.5 V  
10 V  
350  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7 V  
300  
5 V  
5 V  
250  
200  
150  
7 V  
10 V  
4.5 V  
100  
50  
4 V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
25  
50  
75  
100  
125  
150  
175  
200  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
320  
4.0  
280  
240  
200  
160  
120  
80  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
175 °C  
25 °C  
40  
175 °C  
25 °C  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
600 µA  
60 µA  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
Ciss  
175 °C, max  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8 V  
20 V  
32 V  
8
6
4
2
0
25 °C  
101  
100 °C  
150 °C  
100  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
45  
44  
43  
42  
41  
40  
39  
38  
37  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2020-03-22  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ40ꢀV  
ISC015N04NM5  
RevisionꢀHistory  
ISC015N04NM5  
Revision:ꢀ2020-03-22,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2020-01-22  
2020-03-22  
Update condition Id pulse, Features and footnotes  
Trademarks  
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2020-03-22  

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