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ISC037N12NM6 [INFINEON]

This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance.  ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
ISC037N12NM6
型号： ISC037N12NM6
厂家： Infineon    Infineon
描述：

This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance.  ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
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ISC037N12NM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
TDSON-8ꢀFLꢀ(enlargedꢀsourceꢀinterconnection)  
8
7
6
5
Features  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
1
5
2
6
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀHighꢀavalancheꢀenergyꢀrating  
7
3
4
8
4
•ꢀ175°Cꢀoperatingꢀtemperature  
3
2
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
1
Drain  
Pin 5-8  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
*1  
Gate  
Pin 4  
Source  
Pin 1-3  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
*1: Internal body diode  
Parameter  
Value  
120  
3.7  
Unit  
VDS  
V
RDS(on),max  
mΩ  
A
ID  
163  
110  
46  
Qoss  
nC  
nC  
nC  
QG  
Qrrꢀ(1000ꢀA/µs)  
256  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISC037N12NM6  
PG-TDSON-8 FL  
037N12N6  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
163  
115  
105  
19.2  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=8ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,TA=25ꢀ°C,RthJA=50ꢀ°C/W2)  
Pulsed drain current3)  
ID,pulse  
IAS  
-
-
-
-
-
652  
50  
A
A
TA=25ꢀ°C  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
-
TC=25ꢀ°C  
EAS  
VGS  
-
1032 mJ  
ID=16ꢀA,ꢀRGS=25ꢀΩ  
-20  
20  
V
-
-
-
-
-
214  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
°C  
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
-
-
-
0.7  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
20  
50  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information.  
4) See Diagram 13 for more detailed information.  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
120  
2.6  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3.1  
3.6  
VDS=VGS,ꢀID=111ꢀµA  
-
-
0.1  
10  
1
100  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
3.1  
3.6  
3.7  
4.4  
VGS=10ꢀV,ꢀID=50ꢀA  
VGS=8ꢀV,ꢀID=25ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
0.4  
47  
0.8  
94  
1.2  
-
Ω
-
Transconductance  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
3300 4300 pF  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
980  
20  
1300 pF  
35  
-
pF  
ns  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
12  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG,ext=1.6ꢀΩ  
5.6  
17  
-
-
-
ns  
ns  
ns  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG,ext=1.6ꢀΩ  
7.2  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
16  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
21  
13  
15  
-
Gate to source charge1)  
Gate charge at threshold1)  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=60ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
10.2  
10.1  
16  
Qsw  
Gate charge total1)  
Qg  
46  
58  
-
Gate plateau voltage  
Output charge1)  
Vplateau  
Qoss  
4.9  
110  
138  
nC  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
163  
652  
1.0  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.83  
30  
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C  
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=1000ꢀA/µs  
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=1000ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
Reverse recovery time1)  
Reverse recovery charge1)  
60  
ns  
nC  
ns  
nC  
Qrr  
trr  
64  
128  
54  
27  
Qrr  
256  
512  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
240  
175  
150  
125  
100  
75  
200  
160  
120  
80  
50  
40  
25  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
1 µs  
0.02  
0.05  
10 µs  
102  
101  
0.1  
0.2  
0.5  
100  
100 µs  
1 ms  
10-1  
10-2  
10-3  
100  
10 ms  
DC  
10-1  
10-2  
100  
101  
102  
103  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
700  
12  
11  
5.5 V  
600  
10 V  
10  
6 V  
500  
9
8
7
8 V  
400  
7 V  
300  
6
7 V  
5
200  
8 V  
4
6 V  
10 V  
100  
3
2
5.5 V  
5 V  
0
0
1
2
3
4
5
0
50  
100  
150  
200  
250  
300  
350  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
700  
10  
600  
500  
400  
300  
200  
100  
0
8
25 °C  
175 °C  
175 °C  
6
4
100 °C  
25 °C  
2
-55 °C  
0
2
3
4
5
6
7
8
9
4
6
8
10  
12  
14  
16  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
4.0  
3.5  
3.0  
2.5  
2.0  
1.6  
1.2  
0.8  
0.4  
1110 µA  
111 µA  
2.0  
1.5  
1.0  
0.5  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
104  
103  
102  
101  
100  
Ciss  
102  
101  
100  
Coss  
Crss  
0
20  
40  
60  
80  
100  
120  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
24 V  
60 V  
96 V  
9
8
25 °C  
7
6
5
4
3
2
1
0
100 °C  
101  
150 °C  
100  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=25ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
135  
130  
125  
120  
115  
110  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B000193699  
REVISION  
04  
MILLIMETERS  
DIMENSION  
MIN.  
0.90  
0.15  
0.26  
4.80  
3.70  
0.00  
5.70  
5.90  
3.88  
MAX.  
1.20  
0.35  
0.54  
5.35  
4.40  
0.23  
6.10  
6.42  
4.42  
SCALE 10:1  
A
A1  
b
3mm  
0
1
2
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
L
0.69  
0.45  
0.90  
0.69  
ISSUE DATE  
05.11.2019  
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC037N12NM6  
RevisionꢀHistory  
ISC037N12NM6  
Revision:ꢀ2022-12-13,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2022-12-13  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
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improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
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Publishedꢀby  
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81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2022-12-13  

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