ISC045N03L5S [INFINEON]
凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合,英飞凌可为所有客户提供合适的选择,满足不同需求。;型号: | ISC045N03L5S |
厂家: | Infineon |
描述: | 凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合,英飞凌可为所有客户提供合适的选择,满足不同需求。 |
文件: | 总13页 (文件大小:1312K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ISC045N03L5S
MOSFET
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀBuckꢀconverter
•ꢀOptimizedꢀforꢀcleanꢀswitching
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
S 1
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 2
S 3
G 4
Parameter
Value
Unit
6 D
5 D
VDS
30
V
RDS(on),max
ID
4.5
63
mΩ
A
QOSS
8.6
13
nC
nC
QG(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISC045N03L5S
PG-TDSON-8
045N03L5
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
63
40
53
34
18
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
Pulsed drain current2)
ID,pulse
IAS
-
-
-
-
-
252
35
A
TC=25ꢀ°C
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
14
mJ
V
ID=35ꢀA,ꢀRGS=25ꢀΩ
-20
20
-
-
-
-
-
30
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
4.2
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
20
50
Device on PCB,
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
30
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2.0
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
5.1
3.8
6.4
4.5
VGS=4.5ꢀV,ꢀID=30ꢀA
VGS=10ꢀV,ꢀID=30ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
4
-
-
Ω
-
Transconductance
40
80
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
870
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
Output capacitance
330
Reverse transfer capacitance
49
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
8.4
6.8
12
-
-
-
-
ns
ns
ns
ns
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
6.4
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
2.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
1.4
2.2
Qsw
3.2
Gate charge total
Qg
6.7
Gate plateau voltage
Gate charge total
Vplateau
Qg
2.8
13
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
5.4
8.6
VDD=15ꢀV,ꢀVGS=0ꢀV
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
30
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
120
A
TC=25ꢀ°C
Diode forward voltage
0.89
5
-
-
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
70
60
50
40
30
20
10
0
30
20
10
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
0.5
102
10 µs
100
0.2
100 µs
10 ms
0.1
1 ms
101
0.05
0.02
DC
0.01
10-1
single pulse
100
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
250
8
3.3 V
10 V
8 V
7
6
5 V
200
150
100
50
4.5 V
4.5 V
5
5 V
8 V
4
10 V
3
2
1
0
3.3 V
0
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
250
160
200
150
100
120
80
40
0
50
150 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
7
2.5
6
5
2.0
1.5
1.0
0.5
0.0
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
102
101
100
10-1
103
102
101
Ciss
Coss
Crss
0
5
10
15
20
25
0.0
0.5
1.0
1.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
15 V
10
8
6 V
24 V
25 °C
101
6
100 °C
125 °C
4
2
100
0
100
101
102
103
0
4
8
12
16
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
34
32
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISC045N03L5S
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-02-20
OptiMOSTM Power-MOSFET , 30 V
ISC045N03L5S
Dimension in mm
Figure 3 Outline Tape (TDSON-8)
Final Data Sheet
12
Rev. 2.0, 2020-02-20
OptiMOSTM Power-MOSFET , 30 V
ISC045N03L5S
Revision History
ISC045N03L5S
Revision: 2020-02-20, Rev. 2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-02-20
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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(“Beschaffenheitsgarantie”) .
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product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
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reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.0, 2020-02-20
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