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ISC104N12LM6 [INFINEON]

This is a logic level 120 V MOSFET in SuperSO8 packaging with 10.4 mOhm on-resistance.  ISC104N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
ISC104N12LM6
型号： ISC104N12LM6
厂家： Infineon    Infineon
描述：

This is a logic level 120 V MOSFET in SuperSO8 packaging with 10.4 mOhm on-resistance.  ISC104N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
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ISC104N12LM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
SuperSO8  
5
8
6
7
7
Features  
6
5
8
•ꢀN-channel,ꢀlogicꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀHighꢀavalancheꢀenergyꢀrating  
4
3
1
2
2
•ꢀ175°Cꢀoperatingꢀtemperature  
3
1
4
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
Drain  
Pin 5-8  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
*1  
Gate  
Pin 4  
Source  
Pin 1-3  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
*1: Internal body diode  
Parameter  
Value  
120  
10.4  
63  
Unit  
VDS  
V
RDS(on),max  
ID  
mΩ  
A
Qoss  
37  
nC  
nC  
nC  
QGꢀ(0V...4.5V)  
Qrrꢀ(1000ꢀA/µs)  
10.4  
106  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
104N12L6  
RelatedꢀLinks  
ISC104N12LM6  
PG-TDSON-8  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
63  
44  
38  
11  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
VGS=10V,TA=25°C,RthJA=50°C/W2)  
Pulsed drain current3)  
ID,pulse  
IAS  
-
-
-
-
-
252  
28  
A
TA=25ꢀ°C  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
-
A
TC=25ꢀ°C  
EAS  
VGS  
-
166  
20  
mJ  
V
ID=10ꢀA,ꢀRGS=25ꢀΩ  
-20  
-
-
-
-
-
94  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
-
-
-
1.6  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
20  
50  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
120  
1.2  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=35ꢀµA  
1.7  
2.2  
-
-
0.1  
10  
1.0  
100  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
IDSS  
IGSS  
µA  
nA  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
-
8.8  
11.4  
16.6  
10.4  
14.1  
-
VGS=10ꢀV,ꢀID=28ꢀA  
mΩ VGS=4.5ꢀV,ꢀID=14ꢀA  
VGS=3.3ꢀV,ꢀID=4.6ꢀA  
Drain-source on-state resistance  
RDS(on)  
Gate resistance  
RG  
gfs  
0.46  
30  
0.91  
57  
1.37  
-
Ω
-
Transconductance  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=28ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
1400 1800 pF  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
340  
10  
440  
17  
pF  
pF  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
6
-
-
-
-
ns  
ns  
ns  
ns  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,  
RG,ext=1.6ꢀΩ  
2.5  
14  
4
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=14ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
4
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
5.3  
3.3  
5.1  
-
Gate to source charge1)  
Gate charge at threshold1)  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Gate charge total1)  
Output charge1)  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=60ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=60ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
2.5  
3.4  
Qsw  
Qg  
5
10.4  
2.8  
13  
-
Vplateau  
Qg  
19.6  
37  
26  
49  
nC  
nC  
Qoss  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
63  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
252  
1.0  
46  
A
TC=25ꢀ°C  
Diode forward voltage  
0.87  
23  
V
VGS=0ꢀV,ꢀIF=28ꢀA,ꢀTj=25ꢀ°C  
VR=60ꢀV,ꢀIF=14ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=14ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=14ꢀA,ꢀdiF/dt=1000ꢀA/µs  
VR=60ꢀV,ꢀIF=14ꢀA,ꢀdiF/dt=1000ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
ns  
nC  
Qrr  
trr  
38  
76  
17  
34  
Qrr  
106  
212  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
100  
70  
60  
50  
40  
30  
20  
10  
0
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
0.02  
0.05  
1 µs  
102  
101  
0.1  
0.2  
0.5  
10 µs  
100  
10-1  
10-2  
100 µs  
1 ms  
100  
DC  
10 ms  
10-1  
10-2  
100  
101  
102  
103  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
250  
28  
10 V  
24  
20  
16  
12  
8
3 V  
5 V  
200  
150  
100  
50  
3.3 V  
4 V  
4.5 V  
4.5 V  
5 V  
4 V  
10 V  
3.3 V  
2.8 V  
4
3 V  
0
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
120  
140  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
150  
25  
125  
100  
75  
50  
25  
0
25 °C  
20  
175 °C  
15  
100 °C  
175 °C  
10  
25 °C  
5
-55 °C  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
2
4
6
8
10  
12  
14  
16  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=28ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
350 µA  
1.6  
1.2  
0.8  
0.4  
0.0  
35 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=28ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
103  
102  
101  
100  
Ciss  
102  
101  
100  
Coss  
Crss  
0
20  
40  
60  
80  
100  
120  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
24 V  
60 V  
96 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
10-1  
100  
101  
102  
103  
0
4
8
12  
16  
20  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=14ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
132  
130  
128  
126  
124  
122  
120  
118  
116  
114  
112  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00003332  
REVISION  
08  
MILLIMETERS  
DIMENSION  
MIN.  
0.90  
0.15  
0.34  
4.80  
3.90  
0.00  
5.70  
5.90  
3.88  
MAX.  
1.20  
0.35  
0.54  
5.35  
4.40  
0.22  
6.10  
6.42  
4.31  
SCALE 10:1  
A
A1  
b
3mm  
0
1
2
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
L
0.45  
0.45  
0.71  
0.69  
ISSUE DATE  
05.11.2019  
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
ISC104N12LM6  
RevisionꢀHistory  
ISC104N12LM6  
Revision:ꢀ2022-12-13,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2022-12-13  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2022-12-13  

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