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ISK036N03LM5 [INFINEON]

With the new BIC OptiMOS™  5 in 25V and 30V product family Infineon offers a Best in class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications.;
ISK036N03LM5
型号： ISK036N03LM5
厂家： Infineon    Infineon
描述：

With the new BIC OptiMOS™  5 in 25V and 30V product family Infineon offers a Best in class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications.

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ISK036N03LM5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
PG-VSON-6  
Pin 1  
Features  
2
3
•ꢀLowestꢀon-resistanceꢀRDS(on)ꢀinꢀaꢀ2x2ꢀpackage  
•ꢀOptimizedꢀforꢀhighestꢀperformanceꢀandꢀpowerꢀdensity  
•ꢀ100%ꢀavalancheꢀtested  
tab  
•ꢀSuperiorꢀthermalꢀresistanceꢀforꢀaꢀ2x2ꢀpackage  
•ꢀN-channel  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
6
5
4
(fused)  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Pin 1,2,5,6,tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Gate  
Pin 3  
Parameter  
Value  
Unit  
Source  
Pin 4  
VDS  
30  
V
RDS(on),max  
ID  
3.6  
81  
mΩ  
A
Qoss  
8.2  
7.2  
nC  
nC  
QG(0V..4.5V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISK036N03LM5  
PG-VSON-6  
3603  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
81  
51  
16.5  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,TA=25ꢀ°C,RthJA=60ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
323  
7
A
TC=25ꢀ°C  
-
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-16  
16  
-
-
-
-
-
39  
2.1  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=60ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
at Tj=25 °C, unless otherwise specified  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJA  
-
1.6  
-
3.2  
°C/W -  
°C/W -  
Device on PCB,  
-
60  
6 cm² cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
30  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
1.2  
1.6  
2.0  
VDS=VGS,ꢀID=250ꢀµA  
-
-
0.1  
10  
1
100  
VDS=24ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=24ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=16ꢀV,ꢀVDS=0ꢀV  
-
-
2.6  
3.3  
3.6  
4.6  
VGS=10ꢀV,ꢀID=20ꢀA  
VGS=4.5ꢀV,ꢀID=20ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
-
0.7  
96  
1.2  
-
Ω
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
1010 1300 pF  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
270  
32  
350  
56  
pF  
pF  
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
7.7  
1.4  
14.6  
1.5  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=15ꢀV,ꢀVGS=4.5ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
2.5  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
3.4  
2.2  
2.7  
3.9  
9.0  
-
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=15ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
1.6  
1.8  
Qsw  
Qg  
2.7  
Gate charge total  
7.2  
Gate plateau voltage  
Gate charge total  
Vplateau  
Qg  
2.5  
15.2  
8.2  
20.2  
10.9  
nC  
nC  
Output charge  
Qoss  
1) Defined by design. Not subject to production test.  
2) See figure 16 for gate charge parameter definition. Defined by design, not subject to production test  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
37  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
323  
1.0  
A
TC=25ꢀ°C  
Diode forward voltage  
0.79  
25.8  
17.0  
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=15ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
51.6  
34  
ns  
nC  
Qrr  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
40  
100  
35  
30  
25  
20  
15  
10  
5
80  
60  
40  
20  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
102  
single pulse  
0.01  
0.02  
1 µs  
0.05  
0.1  
0.2  
0.5  
102  
101  
10 µs  
101  
100 µs  
100  
10-1  
10-2  
1 ms  
10 ms  
100  
10-1  
DC  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
350  
8
4.5 V  
10 V  
4 V  
5 V  
7
300  
3 V  
6
5
4
3
3.5 V  
250  
200  
3.5 V  
4 V  
150  
100  
4.5 V  
5 V  
10 V  
2
3 V  
50  
1
2.8 V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
25  
50  
75  
100  
125  
150  
175  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
350  
12  
300  
250  
200  
150  
100  
50  
10  
8
6
4
150 °C  
2
25 °C  
150 °C  
25 °C  
3.0  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.5  
4.0  
0
2
4
6
8
10  
12  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2500 µA  
250 µA  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
150 °C  
150 °C, max  
103  
102  
101  
102  
101  
100  
Ciss  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
6 V  
15 V  
24 V  
8
6
4
2
0
101  
25 °C  
100 °C  
125 °C  
100  
10-1  
10-1  
100  
101  
102  
103  
0
2
4
6
8
10  
12  
14  
16  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
33  
32  
31  
30  
29  
28  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSION  
MIN.  
MAX.  
0.90  
0.05  
0.35  
DOCUMENT NO.  
Z8B00188375  
A
A1  
b
-
-
REVISION  
0.25  
01  
c
(0.20)  
0.65  
D
1.90  
1.10  
1.90  
0.90  
2.10  
1.30  
2.10  
1.10  
SCALE 20:1  
D1  
E
0
1mm  
E1  
e
K
0.05  
0.26  
0.32  
0.10  
0.20  
0.10  
0.13  
-
K1  
K2  
K3  
L
-
EUROPEAN PROJECTION  
-
0.30  
0.30  
3.70  
0.33  
L1  
L2  
R
ISSUE DATE  
01.03.2018  
(0.08)  
(0.20)  
R1  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-6,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2023-06-05  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ30ꢀV  
ISK036N03LM5  
RevisionꢀHistory  
ISK036N03LM5  
Revision:ꢀ2023-06-05,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2020-11-26  
2023-06-05  
Release of final version  
Update RthJC, Ptot, current rating, RDS(on)typ, Gfs, Capacitances and Gate charges.  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2023ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2023-06-05  

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