ISP20EP10LM [INFINEON]
SOT-223 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU,开关速度快且雪崩能力强,尤其适合质量要求高的应用。器件支持逻辑电平,具备较宽的 RDS(on) 范围和低 Qg,低负载下效率较高。;型号: | ISP20EP10LM |
厂家: | Infineon |
描述: | SOT-223 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU,开关速度快且雪崩能力强,尤其适合质量要求高的应用。器件支持逻辑电平,具备较宽的 RDS(on) 范围和低 Qg,低负载下效率较高。 电池 开关 |
文件: | 总11页 (文件大小:1777K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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