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ISP650P06NM [INFINEON]

OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.;
ISP650P06NM
型号： ISP650P06NM
厂家： Infineon    Infineon
描述：

OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.

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ISP650P06NM  
MOSFET  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
SOT-223-4  
Features  
4
•ꢀP-Channel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀNormalꢀLevel  
1
•ꢀEnhancementꢀmode  
2
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
3
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Pin 2, 4  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Gate  
Pin 1  
Parameter  
Value  
Unit  
Source  
Pin 3  
VDS  
-60  
V
RDS(on),max  
ID  
65  
mΩ  
A
-3.7  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
ISP650P06NM  
PG-SOT223  
650P06NM  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=-10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=70ꢀ°C/W  
Continuous drain current1)  
Continuous drain current1)  
ID  
ID  
-
-
-
-3.7  
A
VGS=-10ꢀV,ꢀTA=100ꢀ°C,  
RTHJA=70ꢀ°C/W  
-
-2.4  
A
Pulsed drain current2)  
Avalanche energy, single pulse3)  
ID,pulse  
EAS  
-
-
-
-
-14.8  
A
TA=25ꢀ°C  
-
1961 mJ  
ID=-3.7ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
20  
V
-
-
-
-
-
4.2  
1.8  
TS=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=70ꢀ°C/W1)  
IEC climatic category; DIN IEC 68-1:  
55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - soldering  
point  
RthJS  
RthJA  
-
-
-
25  
°C/W -  
°C/W -  
Device on PCB,  
-
70  
6 cm² cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
-60  
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA  
VDS=VGS,ꢀID=-1037ꢀµA  
-2.1  
-3  
-4  
-
-
-0.1  
-10  
-1  
-100  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
-
-
-
-10  
54  
5
-100  
VGS=-20ꢀV,ꢀVDS=0ꢀV  
65  
-
mΩ VGS=-10ꢀV,ꢀID=-3.7ꢀA  
Ω
-
Transconductance  
gfs  
8.3  
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-3.7ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1600  
220  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
54  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-3.7ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
12  
14  
37  
11  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-3.7ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-3.7ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-3.7ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
-7  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀID=-3.7ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV  
VDD=-30ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
-5  
-13  
Qsw  
-15  
Gate charge total  
Qg  
-39  
Gate plateau voltage  
Output charge  
Vplateau  
Qoss  
-4.2  
-17  
nC  
1) See diagram ,Gate charge waveforms, for gate charge parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-1.5  
-6  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TA=25ꢀ°C  
IS,pulse  
VSD  
trr  
A
TA=25ꢀ°C  
Diode forward voltage  
-0.75 -1.2  
V
VGS=0ꢀV,ꢀIF=-1.5ꢀA,ꢀTj=25ꢀ°C  
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs  
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
46  
-
-
ns  
nC  
Qrr  
-100  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
2.0  
4
1.5  
1.0  
0.5  
0.0  
3
2
1
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TA[°C]  
TA[°C]  
Ptot=f(TA)  
ID=f(TA);ꢀ|VGS|≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
102  
0.5  
0.2  
101  
101  
100 µs  
1 ms  
0.1  
0.05  
10 ms  
100 ms  
0.02  
100  
100  
0.01  
DC  
10-1  
10-2  
10-3  
10-1  
single pulse  
10-2  
10-3  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
-VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
60.0  
150  
-10 V  
-8 V  
50.0  
-7 V  
-4.5 V  
125  
100  
75  
40.0  
-6 V  
30.0  
20.0  
10.0  
0.0  
-5 V  
-6 V  
-5 V  
-4.5 V  
-7 V  
-8 V  
-10 V  
50  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
-VDSꢀ[V]  
-IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
30.0  
175  
150  
125  
25.0  
20.0  
15.0  
150 °C  
100  
75  
10.0  
25 °C  
50  
150 °C  
5.0  
25 °C  
25  
0.0  
0
2
3
4
5
6
7
8
5
6
7
8
9
10  
-VGSꢀ[V]  
-VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=-3.7ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
3.50  
3.25  
3.00  
2.75  
2.50  
2.25  
2.00  
1.6  
1.2  
0.8  
0.4  
0.0  
-10370 µA  
-1037 µA  
-80  
-40  
0
40  
80  
120  
160  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=-3.7ꢀA,ꢀVGS=-10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
101  
25 °C  
25 °C, max  
150 °C  
150 °C, max  
Ciss  
103  
100  
10-1  
10-2  
Coss  
102  
Crss  
101  
0
10  
20  
30  
40  
50  
60  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
-VDSꢀ[V]  
-VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
101  
10  
-12 V  
-30 V  
-48 V  
8
6
4
2
0
125 °C  
100 °C  
25 °C  
100  
100  
101  
102  
103  
104  
105  
0
5
10  
15  
20  
25  
30  
35  
40  
tAVꢀ[µs]  
-Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=-3.7ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
70  
65  
60  
55  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2019-03-26  
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV  
ISP650P06NM  
RevisionꢀHistory  
ISP650P06NM  
Revision:ꢀ2019-03-26,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2019-03-26  
Trademarks  
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2019-03-26  

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