ISS17EP06LM [INFINEON]
OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.;
| 型号： | ISS17EP06LM |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. 微控制器 |
| 文件： | 总11页 (文件大小：1142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISS17EP06LM
MOSFET
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
SOT-23
3
Features
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀLogicꢀLevel
•ꢀEnhancementꢀmode
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 2
VDS
-60
V
RDS(on),max
ID
1.7
Ω
-0.3
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISS17EP06LM
PG-SOT23
DL
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Continuous drain current1)
ID
-
-0.30
A
A
VGS=-10ꢀV,ꢀTA=25ꢀ°C
-
-
-
-
-
-
-0.21
-0.29
-0.18
VGS=-10ꢀV,ꢀTA=100ꢀ°C
VGS=-4.5ꢀV,ꢀTA=25ꢀ°C
VGS=-4.5ꢀV,ꢀTA=100ꢀ°C
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
-1.2
25
A
TA=25ꢀ°C
-
mJ
V
ID=-0.3ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
20
-
Power dissipation
0.36
W
TA=25ꢀ°C,ꢀRTHJA=350ꢀ°C/W
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - soldering
point,
bottom
RthJS
-
-
-
120
°C/W -
°C/W -
Device on PCB,
RthJA
-
350
minimum footprint1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick), minimum footprint. PCB is
vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
-1
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA
VDS=VGS,ꢀID=-34ꢀµA
-1.5
-2
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
-10
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
-
-
1356 1700
1634 2200
VGS=-10ꢀV,ꢀID=-0.3ꢀA
VGS=-4.5ꢀV,ꢀID=-0.29ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
-
67
-
-
Ω
-
Transconductance
0.64
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-0.3ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
55
9
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
3
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.3ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
2
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.3ꢀA,
RG,ext=1.6ꢀΩ
3
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.3ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
27
9
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.3ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-0.16
-0.08
-0.45
-0.53
-1.79
-3.00
-0.58
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-0.3ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
Qsw
Gate charge total
Qg
Gate plateau voltage
Output charge
Vplateau
Qoss
nC
1) See diagram ,Gate charge waveforms, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-0.3
-1.2
-1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TA=25ꢀ°C
IS,pulse
VSD
trr
-
A
TA=25ꢀ°C
Diode forward voltage
-0.8
14
V
VGS=0ꢀV,ꢀIF=-0.3ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-0.3ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-0.3ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
-10
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
0.4
0.4
0.3
0.2
0.1
0.0
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TA[°C]
TA[°C]
Ptot=f(TA)
ID=f(TA);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
101
103
100
10-1
10-2
10-3
1 µs
100 µs
1 ms
0.5
102
0.2
0.1
100 ms
10 ms
DC
0.05
101
0.02
0.01
single pulse
100
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1.4
3500
-5 V
-4.5 V
-4 V
-10 V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-2.8 V
-3 V
3000
2500
2000
1500
1000
-3.5 V
-4 V
-3.5 V
-4.5 V
-5 V
-3 V
-10 V
-2.8 V
0
1
2
3
4
5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1.0
5000
0.8
0.6
0.4
4000
3000
150 °C
2000
25 °C
0.2
1000
150 °C
25 °C
0.0
0
1
2
3
4
5
4
5
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-0.3ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.00
2.0
1.6
1.2
0.8
0.4
0.0
1.75
1.50
1.25
1.00
0.75
-340 µA
-34 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-0.3ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
102
101
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
100
10-1
10-2
101
Coss
Crss
100
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
100
10
-12 V
-30 V
-48 V
8
6
4
2
0
25 °C
10-1
100 °C
125 °C
10-2
101
102
103
104
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-0.3ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
65
60
55
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT23,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS17EP06LM
RevisionꢀHistory
ISS17EP06LM
Revision:ꢀ2019-03-25,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-03-25
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-03-25
相关型号：
ISS55EP06LM
OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.
INFINEON
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