ISS55EP06LM [INFINEON]
OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.;
| 型号： | ISS55EP06LM |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. 微控制器 |
| 文件： | 总11页 (文件大小：1156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISS55EP06LM
MOSFET
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
SOT-23
3
Features
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀLogicꢀLevel
•ꢀEnhancementꢀmode
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 2
VDS
-60
V
RDS(on),max
ID
5.5
Ω
-0.18
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISS55EP06LM
PG-SOT23
CL
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Continuous drain current1)
ID
-
-0.18
A
A
VGS=-10ꢀV,ꢀTA=25ꢀ°C
-
-
-
-
-
-
-0.12
-0.16
-0.10
VGS=-10ꢀV,ꢀTA=100ꢀ°C
VGS=-4.5ꢀV,ꢀTA=25ꢀ°C
VGS=-4.5ꢀV,ꢀTA=100ꢀ°C
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
-0.72
4.3
A
TA=25ꢀ°C
-
mJ
V
ID=-0.18ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
20
-
Power dissipation
0.4
W
TA=25ꢀ°C,ꢀRTHJA=350ꢀ°C/W
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - soldering
point
RthJS
RthJA
-
-
-
130
°C/W -
°C/W -
Device on PCB,
-
350
minimum footprint1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 (one layer, 70 µm thick), minimum footprint. PCB is vertical in
still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
-1
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA
VDS=VGS,ꢀID=-11ꢀµA
-1.5
-2
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
-10
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
-
-
4344 5500
5240 7000
VGS=-10ꢀV,ꢀID=-0.18ꢀA
VGS=-4.5ꢀV,ꢀID=-0.16ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
-
45
-
-
Ω
-
Transconductance
0.28
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-0.18ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
18
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
3.4
Reverse transfer capacitance
1.2
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.18ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
1.0
1.4
4.9
1.2
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.18ꢀA,
RG,ext=1.6ꢀΩ
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.18ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-0.18ꢀA,
RG,ext=1.6ꢀΩ
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
Qg(th)
Qgd
Qsw
Qg
-
-0.06
-0.03
-0.17
-0.21
-0.59
-
nC
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
-
-
-
-
-
-
-
-
nC
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
nC
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
nC
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
Gate charge total
nC
VDD=-30ꢀV,ꢀID=-0.18ꢀA,
VGS=0ꢀtoꢀ-10ꢀV
Gate plateau voltage
Output charge
Vplateau
Qoss
-
-
-3.5
-
-
V
-0.20
nC
VDD=-30ꢀV,ꢀVGS=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-0.18
-0.72
-1.2
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
A
V
TA=25ꢀ°C
IS,pulse
VSD
-
TA=25ꢀ°C
Diode forward voltage
-0.9
VGS=0ꢀV,ꢀIF=-0.18ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-0.18ꢀA,
diF/dt=-100ꢀA/µs
Reverse recovery time
trr
-
-
10
-5
-
-
ns
VR=-30ꢀV,ꢀIF=-0.18ꢀA,
diF/dt=-100ꢀA/µs
Reverse recovery charge
Qrr
nC
1) See diagram ,Gate charge waveforms, for gate charge parameter definition
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
0.4
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TA[°C]
TA[°C]
Ptot=f(TA)
ID=f(TA);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
100
103
1 µs
100 µs
0.5
10-1
10-2
10-3
102
1 ms
0.2
10 ms
0.1
0.05
100 ms
0.02
101
0.01
DC
single pulse
100
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
0.7
12500
-10 V
0.6
-5 V
10000
-4.5 V
-2.8 V
-3 V
0.5
-3.5 V
-4 V
7500
5000
2500
0
-4 V
0.4
-4.5 V
-5 V
0.3
-10 V
-3.5 V
0.2
-3 V
0.1
-2.8 V
0.0
0
1
2
3
4
5
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
0.5
14000
12000
0.4
0.3
0.2
10000
150 °C
8000
6000
25 °C
4000
0.1
2000
0
150 °C
25 °C
0.0
1
2
3
4
5
4
5
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-0.18ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.00
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.75
1.50
1.25
1.00
0.75
-100 µA
-10 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-0.18ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
102
101
25 °C
25 °C, max
150 °C
150 °C, max
100
10-1
10-2
10-3
Ciss
101
Coss
Crss
100
0
10
20
30
40
50
60
0.25
0.50
0.75
1.00
1.25
1.50
1.75
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
100
10
-12 V
-30 V
-48 V
8
6
4
2
0
25 °C
10-1
100 °C
125 °C
10-2
100
101
102
103
0.0
0.1
0.2
0.3
0.4
0.5
0.6
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-0.18ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
65
60
55
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT23,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-04-03
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISS55EP06LM
RevisionꢀHistory
ISS55EP06LM
Revision:ꢀ2019-04-03,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-04-03
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-04-03
相关型号：
IST006N04NM6
采用封装的OptiMOS™ 6 功率 MOSFET40V MOSFETsTOLL具有极低的 RDS(on) （0.60mOhm）和 475A 的高电流能力。英飞凌在强大的工业封装领域质量突出，是改进电池供电应用、电池保护和电池成型等各种性能的理想解决方案。
INFINEON
IST007N04NM6
采用封装的OptiMOS™ 6 功率 MOSFET40V MOSFETsTOLL具有极低的 RDS(on) （0.70mOhm）和 440A 的高电流能力。英飞凌在强大的工业封装领域质量突出，是改进电池供电应用、电池保护和电池成型等各种性能的理想解决方案。
INFINEON
IST015N06NM5
The OptiMOS™ 5 power MOSFET 60 V in sTOLL package features RDS(on) of 1.5 mOhm. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, including power and gardening tools and E-scooters.
INFINEON
IST019N08NM5
IST011N06NM5 OptiMOS™ 5功率MOSFET 80V采用sTOLL封装，具有低至1.9 mOhm的 RDS(on) 和290 A的大电流能力。它具有英飞凌众所周知的高质量水平和强大的工业封装，是您在电池管理系统 ，轻型电动汽车和 工业机器人应用中实现各种性能的理想解决方案。
INFINEON
IST026N10NM5
IST011N06NM5 OptiMOS™ 5功率MOSFET 100V采用sTOLL封装，具有低至2.6 mOhm的 RDS(on) 和248 A的大电流能力。它具有英飞凌众所周知的高质量水平和强大的工业封装，是您在电池管理系统 ，轻型电动汽车和 工业机器人应用中实现各种性能的理想解决方案。
INFINEON
ISTS100
1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS
ETC
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