IST015N06NM5 [INFINEON]
The OptiMOS™ 5 power MOSFET 60 V in sTOLL package features RDS(on) of 1.5 mOhm. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, including power and gardening tools and E-scooters.;
| 型号： | IST015N06NM5 |
| 厂家： | 
Infineon |
| 描述： | The OptiMOS™ 5 power MOSFET 60 V in sTOLL package features RDS(on) of 1.5 mOhm. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, including power and gardening tools and E-scooters. |
| 文件： | 总11页 (文件大小：888K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IST015N06NM5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
sTOLL
Features
6, Tab
•ꢀOptimizedꢀforꢀlowꢀvoltageꢀmotorꢀdrivesꢀapplication
•ꢀOptimizedꢀforꢀbatteryꢀpoweredꢀapplications
•ꢀEnablesꢀautomatedꢀopticalꢀsolderꢀinspection
•ꢀ100%ꢀavalancheꢀtested
•ꢀN-channel
•ꢀ175°Cꢀrated
1
2
3
4
5
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 6, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1
Gate
Pin 5
Parameter
Value
Unit
Source
Pin 1-4
VDS
60
V
*1: Internal body diode
RDS(on),max
ID
1.5
242
81
mΩ
A
Qoss
nC
nC
QG(0V...10V)
71
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
015N06N5
RelatedꢀLinks
IST015N06NM5
sTOLL
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
242
171
36
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25°C,RthJA=40°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
968
380
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
167
3.8
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.45
0.9
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
40
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=95ꢀµA
2.1
2.8
3.3
-
-
0.5
10
1.0
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.3
1.9
1.5
2.4
VGS=10ꢀV,ꢀID=50ꢀA
VGS=6ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
1.6
-
-
Ω
-
70
140
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
5200
1200
48
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
22.48
63.6
44.6
17.7
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.6ꢀΩ
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
23
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
14.6
12.9
21
-
-
Qsw
-
Gate charge total1)
Qg
71
89
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
4.3
63
-
nC
nC
81
-
VDS=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
121
968
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.84
65.4
101.1
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=30ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
175
250
225
200
175
150
125
100
75
150
125
100
75
50
50
25
25
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
1 µs
103
102
101
100
10-1
10-2
0.05
0.1
0.2
0.5
100
10 µs
100 µs
1 ms
10-1
10-2
10-3
10 ms
DC
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1000
4.0
10 V
8 V
900
800
700
600
500
400
300
200
100
0
7 V
3.5
3.0
5 V
2.5
2.0
1.5
1.0
0.5
0.0
6 V
8 V
6 V
7 V
10 V
5 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
50
100
150
200
250
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1000
5.0
900
800
700
600
500
400
300
200
100
0
4.5
4.0
3.5
3.0
25 °C
175 °C
2.5
175 °C
2.0
1.5
1.0
25 °C
0.5
0.0
0
1
2
3
4
5
6
7
4
8
12
16
20
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.5
2.0
950 µA
95 µA
1.5
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
40
50
60
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
12 V
30 V
48 V
8
6
4
2
0
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
10
20
30
40
50
60
70
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
65
64
63
62
61
60
59
58
57
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-HSOF-5-U01
DATE: 06.05.2021
REVISION: 02
MILLIMETERS
DIMENSIONS
MIN.
MAX.
2.40
0.60
0.90
0.50
7.20
7.00
1.30
1.75
A
A1
b
2.20
0.40
0.70
0.42
6.80
6.80
1.10
1.55
b1
D
D1
D2
D3
D4
D5
D6
E
6.56
5.96
5.60
6.50
7.80
0.60
0.50
6.90
8.20
0.80
0.70
E1
E2
E3
E4
E5
E6
E7
E8
e
2.43
2.30
5.20
2.57
2.50
1.60
1.30
e1
L
1.05
0.80
0.13
1.40
0.00
8.50°
1.25
1.00
L1
L2
P
0.33
1.60
Q
0.10
W
11.50°
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀsTOLL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-04-28
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV
IST015N06NM5
RevisionꢀHistory
IST015N06NM5
Revision:ꢀ2022-04-28,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-04-28
Trademarks
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documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-04-28
相关型号：
IST019N08NM5
IST011N06NM5 OptiMOS™ 5功率MOSFET 80V采用sTOLL封装，具有低至1.9 mOhm的 RDS(on) 和290 A的大电流能力。它具有英飞凌众所周知的高质量水平和强大的工业封装，是您在电池管理系统 ，轻型电动汽车和 工业机器人应用中实现各种性能的理想解决方案。
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IST026N10NM5
IST011N06NM5 OptiMOS™ 5功率MOSFET 100V采用sTOLL封装，具有低至2.6 mOhm的 RDS(on) 和248 A的大电流能力。它具有英飞凌众所周知的高质量水平和强大的工业封装，是您在电池管理系统 ，轻型电动汽车和 工业机器人应用中实现各种性能的理想解决方案。
INFINEON
ISTS100
1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS
ETC
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