ISZ034N06LM5 [INFINEON]
OptiMOS™ 5 60 V 功率 MOSFETISZ034N06LM5 完全适用于开关电源 (SMPS) 这类高效率与功率密度解决方案中的同步整流、电信砖模块、服务器应用以及便携式充电器。器件占板面积仅为 3.3x3.3 mm，电气性能出色，有助于实现同类最佳的功率密度，可进一步改善终端应用中的产品外形尺寸。;
| 型号： | ISZ034N06LM5 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 60 V 功率 MOSFETISZ034N06LM5 完全适用于开关电源 (SMPS) 这类高效率与功率密度解决方案中的同步整流、电信砖模块、服务器应用以及便携式充电器。器件占板面积仅为 3.3x3.3 mm，电气性能出色，有助于实现同类最佳的功率密度，可进一步改善终端应用中的产品外形尺寸。 开关 便携式 服务器 电信 |
| 文件： | 总11页 (文件大小：1193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISZ034N06LM5
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
PG-TSDSON-8ꢀFL
8
5
Features
6
7
6
7
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.rec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀperformance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplatingꢀ:ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀEC61249-2-21
1
4
2
3
3
2
4
1
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 5-8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
*1
Gate
Pin 4
VDS
60
V
Source
Pin 1-3
RDS(on),max
ID
3.4
112
33
mΩ
A
*1: Internal body diode
Qoss
nC
nC
QG(0V..4.5V)
20
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
ISZ034N06LM5
034N06L
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
112
79
19
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RthJA=60ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
448
121
20
A
TC=25ꢀ°C
-
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
83
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=60ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
1.3
1.8
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
-
-
20
60
Device on PCB,
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=36ꢀµA
1.1
1.7
2.3
-
-
0.1
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.9
3.5
3.4
4.2
VGS=10ꢀV,ꢀID=20ꢀA
VGS=4.5ꢀV,ꢀID=10ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
-
1.7
80
-
-
Ω
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
2600 3500 pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
550
25
730
33
pF
pF
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
7.6
4.2
27
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
8.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
6.6
4.2
6.2
8.6
20
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
-
-
Qsw
-
Gate charge total1)
Qg
27
-
Gate plateau voltage
Gate charge total1)
Vplateau
Qg
2.5
40
53
-
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
36
33
-
VDS=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
73
448
1.0
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.81
20
50
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=400ꢀA/µs
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=400ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
-
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
120
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10 µs
102
101
100
10-1
10-2
100 µs
1 ms
DC
100
10 ms
10-1
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
450
10
10 V
5 V
4.5 V
400
350
300
250
200
150
100
50
2.8 V
8
3 V
4 V
6
4
3.5 V
4.5 V
3.5 V
3 V
4 V
5 V
10 V
2.8 V
0
2
0
1
2
3
4
5
0
20
40
60
80
100
120
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
500
10.0
400
300
200
100
0
25 °C
8.0
175 °C
6.0
175 °C
4.0
25 °C
2.0
0
1
2
3
4
5
0
4
8
12
16
20
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
2.2
1.6
1.2
0.8
0.4
1.8
360 µA
1.4
1.0
0.6
36 µA
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
40
50
60
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
12 V
30 V
48 V
8
6
4
2
0
101
25 °C
100 °C
100
150 °C
10-1
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
65
64
63
62
61
60
59
58
57
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TSDSON-8-U03
REVISION: 03
DATE: 20.10.2020
MILLIMETERS
DIMENSIONS
MIN.
MAX.
1.10
0.44
A
b
0.90
0.24
c
(0.20)
D
3.20
2.19
1.54
3.20
2.01
0.10
3.40
2.39
1.74
3.40
2.21
0.30
D1
D2
E
E1
E2
e
0.65
0.06
L
0.30
0.40
0.50
0.50
0.60
0.70
L1
L2
aaa
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2021-03-12
OptiMOSTM5ꢀPower-Transistor,ꢀ60ꢀV
ISZ034N06LM5
RevisionꢀHistory
ISZ034N06LM5
Revision:ꢀ2021-03-12,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2021-03-12
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2021-03-12
相关型号：
ISZ0602NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISZ0602NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ0702NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ0703NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ106N12LM6
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISZ230N10NM6
正常电平 ISZ230N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISZ330N12LM6
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISZ56DP15LM
OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
ISZ810P06LM
OptiMOS™ P-channel MOSFETs 60 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
©2020 ICPDF网 联系我们和版权申明