ITS4060S-SJ-N [INFINEON]
高边功率开关,集成了垂直功率 FET,提供嵌入式保护和诊断功能。;型号: | ITS4060S-SJ-N |
厂家: | Infineon |
描述: | 高边功率开关,集成了垂直功率 FET,提供嵌入式保护和诊断功能。 开关 |
文件: | 总21页 (文件大小:736K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
CMOS compatible input
Switching all types of resistive, inductive and capacitive loads
Fast demagnetization of inductive loads
Very low standby current
Optimized Electromagnetic Compatibility (EMC)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown with restart
Overvoltage protection (including load dump)
Reverse battery protection with external resistor
Loss of GND and loss of Vbb protection
Electrostatic Discharge Protection (ESD)
Green Product (RoHS compliant)
Applications
•
•
•
•
All types of resistive, inductive and capacitive loads
Power switch for 12V and 24V DC applications with CMOS compatible control interface
Driver for electromagnetic relays
Power management for high-side-switching with low current consumption in OFF-mode
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC.
Description
The ITS4060S-SJ-N is a protected single channel smart high-side NMOS power switch in a PG-DSO-8 package
with charge pump and CMOS compatible input. The device is monolithically integrated in Smart technology.
Data Sheet
Rev 1.1
2019-07-25
www.infineon.com/industrial-profets
1
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Table 1
Product summary
Parameter
Symbol
VSAZmin
VS
Values
Overvoltage protection
Operating voltage range
On-state resistance
41 V
5 < VS < 34V
typ. 50 mΩ
2.6 A
RDSON
IL(nom)
Tj
Nominal load current
Operating temperature range
Stand-by current
-40°C to 125°C
15 µA
ISSTB
Type
Package
Marking
ITS4060S-SJ-N
PG-DSO-8
I060SN
Data Sheet
2
Rev1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Table of Contents
1
Block diagram and terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
2.1
2.2
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1
3.2
3.3
4
5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Typical performance graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Special feature description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Typical application waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Protection behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1
6.2
6.3
7
8
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
3
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Block diagram and terms
1
Block diagram and terms
ITS4060S-SJ-N
VS
5
6
7
8
Bias
Supervision
Overvoltage
Protection
Current
Limiter
Gate
Control
Circuit
IN
Logic
2
4
ESD
Protection
NC
Temperature
Sensor
OUT
3
1
GND
Figure 1
Block diagram
Voltage- and Current-Definitions:
Switching Times and Slew Rate Definitions:
VIN
H
ITS4060S-SJ-N
L
VS
5
6
7
8
t
IS
VOUT
+VS
Bias
Supervision
Overvoltage
Protection
Current
Limiter
VDS
90%
70%
SROFF
40%
30%
Gate
Control
Circuit
IN
Logic
2
4
IIN
ESD
Protection
SRON
10%
NC
Temperature
Sensor
0
OUT
tON
tOFF
t
t
3
IOUT
IL
IL
1
0
GND
OFF
ON
OFF
GND
Figure 2
Terms - parameter definition
Data Sheet
4
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Pin configuration
2
Pin configuration
2.1
Pin assignment
GND
IN
1
2
3
4
8
7
6
5
VS
VS
OUT
NC
VS
VS
P-DSO-8
Figure 3
Pin configuration top view, PG-DSO-8
2.2
Pin definitions and functions
Pin
Symbol Function
1
GND
IN
Logic ground
2
Input, controls the power switch; the powerswitch is ON when high
3
OUT
NC
Output to the load
4
Not connected
5, 6, 7, 8
VS
Supply voltage (design the wiring for the maximum short circuit current
and also for low thermal resistance)
Data Sheet
5
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
General product characteristics
3
General product characteristics
3.1
Absolute maximum ratings
Table 2
Absolute maximum ratings 1) at Tj = 25°C unless otherwise specified. Currents flowing into
the device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Supply voltage VS
Voltage
VS
–
–
–
–
40
36
V
V
–
4.1.1
Voltage for short circuit protection
Output stage OUT
VSSC
-40°C < Tj < 150°C 4.1.2
Output current; (short circuit current IOUT
–
–
self
A
–
4.1.3
see electrical characteristics)
limited
Input IN
Voltage
VIN
IIN
-10
-5
–
–
16
5
V
–
–
4.1.4
4.1.5
Current
mA
Temperatures
Junction temperature
Storage temperature
Power dissipation
Ta = 25 °C2)
Tj
-40
-55
–
–
125
125
°C
°C
–
–
4.1.6
4.1.7
Tstg
P tot
–
–
–
–
1.5
W
–
4.1.8
4.1.9
Inductive load switch-off energy dissipation
Tj = 125 °C; VS=13.5V; IL= 1.5A3)
EAS
900
mJ single pulse
ESD Susceptibility
ESD susceptibility (input pin IN)
ESD susceptibility (output pin OUT)
ESD susceptibility (all other pins)
VESD
VESD
VESD
-1
-6
-4
–
–
–
1
6
4
kV
kV
kV
HBM4)
HBM4)
HBM4)
4.1.10
4.1.12
4.1.11
1) Not subject to production test, specified by design
2) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection.
PCB is vertical without blown air
3) Not subject to production test, specified by design
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)
Note:
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as “outside” the normal operating
range. Protection functions are neither designed for continuous nor repetitive operation.
Data Sheet
6
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
General product characteristics
3.2
Functional range
Table 3
Functional range
Parameter
Symbol
Values
Typ.
–
Unit Note or
Test Condition
Number
Min.
Max.
Nominal operating voltage
VS
5
34
V
VS increasing
4.2.1
Note:
Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics
table.
3.3
Thermal resistance
Note:
This thermal data was generated in accordance with JEDEC JESD51 standards. For more
information, go to www.jedec.org.
Table 4
Thermal resistance1)
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Thermal resistance - unction to Rthj-pin5
pin5
–
26.7
–
K/W
–
4.3.1
4.3.2
2)
Thermal resistance - junction to RthJA_1s0p
ambient - 1s0p, minimal
footprint
–
140.1 –
K/W
3)
4)
5)
6)
Thermal resistance - junction to RthJA_1s0p_300mm
–
–
–
–
85.8
74.7
78.2
76.6
–
–
–
–
K/W
K/W
K/W
K/W
4.3.3
4.3.4
4.3.5
4.3.6
ambient - 1s0p, 300mm2
Thermal resistance - junction to RthJA_1s0p_600mm
ambient - 1s0p, 600mm2
Thermal resistance - junction to RthJA_2s2p
ambient - 2s2p
Thermal resistance - junction to RthJA_2s2p
ambient with thermal vias - 2s2p
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, footprint; the product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
3) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, Cu, 300mm2; the
product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
4) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, 600mm2; the product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
6)Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board with two
thermal vias; the product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper
layers (2 x 70µm Cu, 2 x 35µm Cu. The diameter of the two vias are equal 0.3mm and have a plating of 25um
with a copper heatsink area of 3mm x 2mm). JEDEC51-7: The two plated-through hole vias should have a
solder land of no less than 1.25 mm diameter with a drill hole of no less than 0.85 mm diameter.
Data Sheet
7
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Electrical characteristics
4
Electrical characteristics
Table 5
VS=13.5V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the
device unless otherwise specified in chapter “Block diagram and terms”. Typical values at
Vs = 13.5V, Tj = 25°C
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Powerstage
NMOS ON resistance
RDSON
RDSON
ILNOM
–
50
95
3.1
60
120
–
mΩ IOUT= 2A;Tj = 25°C;
9V < VS < 34V;
5.0.1
5.0.2
5.0.3
VIN= 5V
NMOS ON resistance
–
mΩ IOUT= 2A;Tj = 125°C;
9V < VS < 34V;
VIN= 5V
Nominal load current;
device on PCB 1)
2.6
A
Tpin5 = 85°C
Timings of power stages2)
Turn ON time (to 90% of Vout);
L to H transition of VIN
tON
–
–
–
90
180
230
1.5
µs
µs
VS=13.5V; RL = 47Ω
VS=13.5V; RL = 47Ω
5.0.4
5.0.5
5.0.6
Turn OFF time (to 10% of Vout);
H to L transition of VIN
tOFF
SRON
110
0.7
ON-slew rate; ∆VOUT / ∆t
(10 to 30% of Vout);
L to H transition of VIN
V / µs VS=13.5V; RL = 47Ω
V / µs VS=13.5V; RL = 47Ω
OFF-slew rate; ∆VOUT / ∆t
(70 to 40% of Vout);
SROFF
–
0.7
1.5
5.0.7
H to L transition of VIN
Under voltage lockout (charge pump start-stop-restart)
Supply undervoltage;
charge pump stop voltage
VSUV
–
–
5.5
5.5
V
V
VS decreasing
VS increasing
5.0.8
5.0.9
Supply startup voltage;
VSSU
–
4.0
Charge pump restart voltage
Current consumption
Operating current
Standby current
IGND
–
–
0.8
–
1.5
10
mA VIN= 5V
5.0.10
5.0.11
ISSTB
µA
µA
µA
VIN= 0V; VOUT= 0V
-40°C < Tj < 85°C
Standby current
ISSTB
–
–
–
–
15
5
VIN= 0V; VOUT= 0V
Tj = 125°C
5.0.12
5.0.13
Output leakage current
IOUTLK
VIN= 0V; VOUT= 0V
Protection functions 3)
Initial peak short circuit current
limit
ILSCP
–
–
28
A
Tj = -40°C; VS = 20V
5.0.14
VIN = 5.0V; tm =150µs
Data Sheet
8
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Electrical characteristics
Table 5
VS=13.5V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the
device unless otherwise specified in chapter “Block diagram and terms”. Typical values at
Vs = 13.5V, Tj = 25°C
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Initial peak short circuit current
limit
ILSCP
ILSCP
ILSCR
VDSCL
VSAZ
TjTrip
THYS
–
17
–
–
–
–
–
–
–
A
A
A
V
Tj = 25°C; VS = 20V
IN = 5.0V; tm =150µs
Tj =125°C; VS = 20V
IN = 5.0V; tm =150µs
5.0.15
5.0.16
5.0.17
5.0.18
5.0.19
5.0.20
5.0.21
V
Initial peak short circuit current
limit
9
–
V
Repetitive short circuit current
limit Tj = TjTrip ; see timing diagrams
–
12
47
–
VIN = 5.0V
IS = 4mA
IS = 4mA
–
Output clamp at VOUT = VS - VDSCL
(inductive load switch off)
41
41
150
–
Overvoltage protection
VOUT = VS - VONCL
V
Thermal overload
trip temperature
–
°C
K
Thermal hysteresis
10
–
Reverse battery4)
Continuous reverse battery
voltage
VSREV
VFDS
- 32
–
–
–
–
V
–
5.0.22
5.0.23
Forward voltage of the drain-
source reverse diode
600
mV IFDS = 200mA;
VIN= 0V; Tj = 125°C
Input interface; pin IN
Input turn-ON voltage
(logic input high-level)
VINON
2.2
–
–
–
–
V
V
–
5.0.24
5.0.25
Input turn-OFF voltage
(logic input low-level)
VINOFF
0.8
–
Input threshold hysteresis
Off state input current
On state input current
Input resistance
VINHYS
IINOFF
IINON
RIN
–
0.3
–
–
V
–
5.0.26
5.0.27
5.0.28
5.0.29
1
30
30
5.0
µA
µA
kΩ
VIN = 0.7V
VIN = 5.0V
–
1
–
1.5
3.5
1) Device on 50mm x 50mm x 1,5mm epoxy FR4 PCB with 6cm2 (one layer copper 70um thick) copper area for supply
voltage connection. PCB in vertical position without blown air.
2) Timing values only with high slewrate input signal; otherwise slower.
3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data
sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed
for continuous repetitive operation.
4) Requires a 150 Ω resistor in GND connection. The reverse load current trough the intrinsic drain-source diode of the
power-MOS has to be limited by the connected load. Power dissipation is higher compared to normal operation due
to the voltage drop across the drain-source diode. The temperature protection is not functional during reverse
current operation! Input current has to be limited (see max ratings).
Data Sheet
9
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Typical performance graphs
5
Typical performance graphs
Typical characteristics
Transient thermal impedance ZthJA versus
Transient thermal impedance ZthJA versus
pulse time tp @ 6cm2 heatsink area
pulse time tp @ min. footprint
D = tp / T
D = tp / T
On-resistance RDSONversus
junction temperature Tj
On-resistance RDSONversus
supply voltage VS
120
100
80
70
60
50
40
30
20
10
60
40
Tj=−40°C;IL=0.5A
Tj=25°C;IL=0.5A
Tj=125°C;IL=0.5A
20
0
Vs=13.5V
0
−40 −25
0
25
50
Tj [°C]
75
100
125
10
15
20
25
Vs[V]
30
35
40
Data Sheet
10
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Typical performance graphs
Typical characteristics
Switch ON time tON versus
junction temperature Tj
Switch OFF time tOFF versus
junction temperature Tj
140
120
100
80
180
160
140
120
100
80
60
60
40
40
Vs=9V;RL=47Ω
20
20
Vs=9V;RL=47Ω
Vs=32V;RL=47Ω
Vs=13.5V;RL=47Ω
Vs=32V;RL=47Ω
0
0
−40 −25
0
25
50
T[°C]
75
100
125
−40 −25
0
25
50
T[°C]
75
100
125
j
j
ON slewrate SRON versus
junction temperature Tj
OFF slewrate SROFF versus
junction temperature Tj
2
1.8
1.6
1.4
1.2
1
2
1.8
1.6
1.4
1.2
1
Vs=9V;RL=47Ω
Vs=13.5V;RL=47Ω
Vs=32V;RL=47Ω
Vs=9V;RL=47Ω
Vs=13.5V;RL=47Ω
Vs=32V;RL=47Ω
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
−40 −25
0
25
50
Tj[°C]
75
100
125
−40 −25
0
25
50
Tj[°C]
75
100
125
Data Sheet
11
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Typical performance graphs
Typical characteristics
Standby current ISSTB versus
junction temperature Tj
Output leakage current IOUTLK versus
junction temperature Tj
6
5
4
3
2
1
2.5
VIN=0V;Vs=32V
2
1.5
1
0.5
VIN=0V;Vs=32V
75 100
0
−40 −25
0
0
25
50
Tj [°C]
125
−40 −25
0
25
50
Tj [°C]
75
100
125
Initial peak short circuit current limit ILSCP versus Initial short circuit shutdown time tSCOFF versus
junction temperature Tj
junction temperature Tj
25
3
2.5
2
20
15
10
5
1.5
1
0.5
Vs=20V
100
Vs=20V
0
0
−40 −25
−40 −25
0
25
50
Tj [°C]
75
125
0
25
50
T[°C]
75
100
125
j
Data Sheet
12
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Typical performance graphs
Typical characteristics
Input current consumption IIN versus
junction temperature Tj
Input current consumption IIN versus
input voltage VIN
12
10
8
200
Tj=−40..25°C;Vs=13.5V
180
Tj=125°C;Vs=13.5V
160
140
120
100
80
6
4
60
40
2
V
IN≤0.7V;Vs=13.5V
VIN=5V;Vs=13.5V
75 100
20
0
0
−40 −25
0
25
50
Tj [°C]
125
0
2
4
6
8
VIN[V]
Input threshold voltage VINH,L versus
junction temperature Tj
Input threshold voltage VINH,L versus
supply voltage VS
2
1.8
1.6
1.4
1.2
1
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.8
0.6
0.4
OFF;Tj=25°C
OFF;Vs=13.5V
ON;Vs=13.5V
75 100
0.2
0
0.2
0
ON;Tj=25°C
−40 −25
0
25
50
Tj [°C]
125
10
15
20
25
30
35
Vs[V]
Data Sheet
13
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Typical performance graphs
Typical characteristics
Max. allowable load inductance L versus
load current IL
Max. allowable inductive single pulse switch-off
energy EAS versus load current IL
2000
1400
Tjstart=125°C;Vs=13.5V;RL=0Ω
Tjstart=125°C;Vs=13.5V
1800
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
600
400
200
0
1
1.5
2
2.5
3
1
1.5
2
2.5
3
IL [A]
IL [A]
Data Sheet
14
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Application information
6
Application information
Note:
The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.
Wire
Harness
ITS4060S-SJ-N
VS
5
6
Bias
Supervision
Overvoltage
Protection
Current
Limiter
7
8
CS
GND3
220nF
Gate
Control
Circuit
IN
Logic
2
4
ESD
Protection
Wire
Harness
NC
Temperature
Sensor
OUT
3
COUT
1nF
Complex
LOAD
1
GND
GND1
GND2
Electronic Control Unit
Figure 4
Application diagram
The ITS4060S-SJ-N can be connected directly to a supply network. It is recommended to place a ceramic
capacitor (e.g. CS = 220nF) between supply and GND of the ECU to avoid line disturbances. Wire harness
inductors/resistors are sketched in the application circuit above.
The complex load (resistive, capacitive or inductive) must be connected to the output pin OUT.
A built-in current limit protects the device against destruction.
The ITS4060S-SJ-N can be switched on and off with standard logic ground related logic signal at pin IN.
In standby mode (IN=L) the ITS4060S-SJ-N is deactivated with very low current consumption.
The output voltage slope is controlled during on and off transition to minimize emissions. Only a small
ceramic capacitor COUT=1nF is recommended to attenuate RF noise.
In the following chapters the main features, some typical waverforms and the protection behavior
of the ITS4060S-SJ-N is shown. For further details please refer to application notes on the Infineon homepage.
Note:
This is a very simplified example of an application circuit. The function must be verified in the real
application.
Data Sheet
15
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Application information
6.1
Special feature description
Supply over voltage:
Supply reverse voltage:
ITS4060S-SJ-N
ITS4060S-SJ-N
VS
VS
5-8
5-8
RIN
RIN
IN
IN
IRev
2
4
2
ZDIN
IIN
ZDIN
IIN
ZDSAZ
ZDSAZ
NC
NC
4
OUT
OUT
ROUTPD
ROUTPD
3
3
IRev1
1
1
GND
GND
ZL
ZL
RGND
RGND
IRev2
If over-voltage is applied to the VS-Pin:
Voltage is limited to VZDSAZ; current can be calculated:
IZDSAZ = (VS – VZDSAZ) / RGND
If reverse voltage is applied to the device:
1.) Current via load resistance RL:
IRev1 = (VRev – VFDS) / RL
2.) Current via Input pin IN and dignostic pin ST :
IRev2 = IST+IIN ~ (VRev–VCC)/RIN +(VRev–VCC)/RST1,2
Current IST must be limited with the extrernal series
resistor RSTS. Both currents will sum up to:
IRev = IRev1+ IRev2
A typical value for RGND is 150Ω.
In case of ESD pulse on the input pin there is in both
polarities a peak current IINpeak ~ VESD / RIN
Drain-Source power stage clamper VDSCL
:
Energy calculation:
ITS4060S-SJ-N
ITS4060S-SJ-N
VS
VS
5-8
5-8
RIN
RIN
IN
IN
EBatt
2
4
2
4
ZDIN
IIN
ZDIN
IIN
ZDSAZ
ZDSAZ
NC
NC
ELoad
OUT
OUT
ROUTPD
ROUTPD
3
3
1
1
IL
EL
ER
LL
RL
GND
GND
LL
RGND
When an inductive load is switched off a current path must be
established until the current is sloped down to zero (all energy
removed from the inductive load). For that purpose the series
combination ZDSCL is connected between Gate and Drain of the
power DMOS acting as an active clamp.
When the device is switched off, the voltage at OUT turns
negative until VDSCL is reached.
Energy stored in the load inductance is given by :
EL= IL²*L/2
While demagnetizing the load inductance the energy
dissipated by the Power-DMOS is:
EAS = ES + EL – ER
With an approximate solution for RL =0Ω:
The voltage on the inductive load is the difference between
VDSCL and VS.
EAS = ½ * L * IL² * {(1- VS / (VS - VDSCL)
Figure 5
Special feature description
Data Sheet
16
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Application information
6.2
Typical application waveforms
General Input Output waveforms:
Waveforms switching a resistive load:
VIN
VIN
H
H
L
L
t
t
t
VS
VOUT
+VS
VDS
90%
70%
SROFF = dV/dt
VOUT
40%
30%
SRON = dV/dt
10%
0
0
tON
tOFF
t
t
t
t
IL
IL
0
0
OFF
ON
OFF
ON
OFF
ON
OFF
Waveforms switching a capacitive load:
Waveforms switching an inducitive load :
VIN
VIN
H
H
L
L
t
t
VOUT
VOUT
~ VS
~ VS
0
0
t
t
IL
ILSC
IL
0
0
t
t
OFF
ON
OFF
ON
OFF
ON
OFF
ON
Figure 6
Typical application waveforms of the ITS4060S-SJ-N
Data Sheet
17
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Application information
6.3
Protection behavior
Overtemperature concept:
Overtemperature behavior:
VIN
H
L
TjRestart
TjTrip
t
VOUT
ON
heating
up
0
t
TJ
TjTrip
OFF
cooling
down
TJ
THYS
Device
Status
THYS
Normal
Toggling
Overtemperature
t
OFF
ON
OFF
ON
OFF
Waveforms turn on into a short circuit :
Waveforms short circuit during on state :
VIN
H
VIN
H
L
L
t
t
VOUT
VOUT
0
0
t
t
Ipeak
Ipeak
IL
IL
ILSCP
Controlled
Controlled
by the
current limit
by the
current limit
ILSCR
ILSCR
circuit
circuit
tm
tSCOFF
0
0
t
t
Normal
operation
OFF
OFF
OFF
OUT shorted to GND
Overloaded
Shut down by overtemperature and
restart by cooling (toggling)
Shut down by overtemperature and
restart by cooling (toggling)
Figure 7
Protective behavior of the ITS4060S-SJ-N
Data Sheet
18
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Package information
7
Package information
0.35 x 45°
1)
4-0.2
C
1.27
B
0.1
SEATING PLANE
±0.25
0.64
+0.1 2)
-0.06
0.41
±0.2
6
M
M
0.2
A
A B 8x
0.2
C 8x
8
5
1
4
1)
5-0.2
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
Figure 8
PG-DSO-81)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Further information on packages
https://www.infineon.com/packages
1) Dimensions in mm
Data Sheet
19
Rev 1.1
2019-07-25
Smart high-side NMOS-power switch
ITS4060S-SJ-N
Revision history
8
Revision history
Revision Date
Changes
2019-07-25 Datasheet updated:
- ESD ratings for HBM updated according ANSI/ESDA/JEDEC JS-001
1.10
1.0
- Editorial changes
12-09-01
Datasheet release
Data Sheet
20
Rev 1.1
2019-07-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2019-07-25
Published by
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
Infineon Technologies AG
81726 Munich, Germany
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents of
the Automotive Electronics Council.
© 2019 Infineon Technologies AG.
All Rights Reserved.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Z8F51106907
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or any
consequences of the use thereof can reasonably be
expected to result in personal injury.
相关型号:
ITS4075Q-EP-D
The ITS4075Q-EP-D is a 75mΩ Quad Channel Smart High-Side Power Switch providing integrated protection functions and a diagnosis feedback. With four channels capable of currents of more than 2 A each, very low typical RDS(ON) values of 120mΩ at Tj = 125°C and the small PG-TSDSO-14 exposed pad package it combines high current capability with minimum space requirements. The exposed pad of the thermally enhanced PG-TSDSO-14 package allows a very efficient heat transfer from the device to inner layers of the PCB by means of thermal vias. The power transistors are built by N-channel vertical power MOSFETs (DMOS) with charge pump.
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