JANSR2N7268D [INFINEON]
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
| 型号： | JANSR2N7268D |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总12页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 90675C
IRHM7150
JANSR2N7268
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
®
THRU-HOLE (TO-254AA)
HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM7150
IRHM3150
IRHM4150
IRHM8150
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
0.065Ω
0.065Ω
0.065Ω
34A JANSR2N7268
34A JANSF2N7268
34A JANSG2N7268
34A JANSH2N7268
1000K Rads (Si) 0.065Ω
TO-254AA
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
34
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
21
136
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
P
@ T = 25°C
C
150
W
W/°C
V
D
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
34
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
8/14/01
IRHM7150
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
V
V
=0 V, I = 1.0mA
D
GS
∆BV
/∆T Temperature Coefficient of Breakdown
0.13
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
0.065
0.076
4.0
V
V
= 12V, I = 21A
D
= 12V, I = 34A
DS(on)
GS
"
Ω
GS
D
V
2.0
8.0
V
V
= V , I = 1.0mA
D
GS(th)
DS
GS
> 15V, I
Ω
g
S ( )
V
= 21A "
DS
= 80V,V =0V
fs
DS
V
I
25
DSS
DS GS
µA
250
V
= 80V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
6.8
100
-100
160
35
V
= 20V
GS
= -20V
GSS
GSS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 34A
g
gs
gd
d(on)
r
GS D
= 50V
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
V
DS
65
t
t
t
t
45
V
= 50V, I = 14A,
DD D
V = 12V, R = 2.35Ω
GS
190
170
130
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
L
Total Inductance
S +
D
nH
C
C
C
Input Capacitance
4300
1200
200
V
GS
= 0V, V = 25V
DS
f = 1.0MHz
iss
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Min Typ Max Units
Parameter
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
34
136
1.4
570
5.8
S
A
SM
V
V
T = 25°C, I = 34A, V
j
= 0V ➀
SD
S
GS
t
Reverse Recovery Time
nS
µC
T = 25°C, I = 34A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
0.21
0.83
thJC
thCS
thJA
°C/W
Junction-to-Ambient
48
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHM7150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
2
Parameter
100KRads(Si)
300 to 1000K Rads (Si) Units
Test Conditions
Min
Max
Min
Max
BV
V
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage# ➀
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source# ➀
100
2.0
100
4.5
V
= 0V, I = 1.0mA
D
DSS
GS
V
4.0
1.25
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
100
-100
25
100
-100
50
V
= 20V
GS
GSS
nA
I
V
= -20 V
GS
GSS
I
µA
V
V
=80V, V
DS
=0V
GS
DSS
R
0.065
0.09
Ω
= 12V, I =21A
D
GS
GS
DS(on)
DS(on)
SD
On-State Resistance (TO-3)
R
Static Drain-to-Source# ➀
On-State Resistance (TO-254AA)
Diode Forward Voltage# ➀
0.065
1.4
0.09
1.4
Ω
V
= 12V, I =21A
D
V
V
V
= 0V, I = 34A
GS S
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS(V)
2
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
Cu
Br
28
285
305
43
39
100
100
100
90
100
70
80
50
60
36.8
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHM7150
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
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Post-Irradiation
IRHM7150
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response of
Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
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5
RadiationCharacteristics
IRHM7150
GS DS
Note: Bias Conditions during radiation: V = 12 Vdc, V = 0 Vdc
Fig 9. Typical Output Characteristics
Pre-Irradiation
Fig 10. Typical Output Characteristics
Post-Irradiation100KRads(Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
Fig 11. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
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Radiation Characteristics
IRHM7150
GS DS
Note: Bias Conditions during radiation: V = 0 Vdc, V = 80 Vdc
Fig 13. Typical Output Characteristics
Pre-Irradiation
Fig 14. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 15. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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7
IRHM7150
Pre-Irradiation
Fig 17. Typical Output Characteristics
Fig 18. Typical Output Characteristics
Fig 19. Typical Transfer Characteristics
Fig 20. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHM7150
29
Fig 21. Typical CapacitanceVs.
Drain-to-SourceVoltage
Fig 22. Typical Gate Charge Vs.
Gate-to-SourceVoltage
Fig 24. Maximum Safe Operating
Area
Fig 23. Typical Source-Drain
DiodeForwardVoltage
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9
IRHM7150
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
t
t
f
Fig 25. Maximum Drain Current
Vs.
CaseTemperature
d(on)
r
d(off)
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
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Pre-Irradiation
IRHM7150
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
V
GS
0.01
Ω
t
p
Fig 28a. Unclamped Inductive Test
Circuit
V
(BR)DSS
t
p
Fig 28c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 28b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
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11
IRHM7150
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
DD
= 25V, starting T = 25°C, L= 0.86mH
J
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 26A, V
L
= 12V
GS
➀➀ Total Dose Irradiation with V Bias.
➀➀ I
SD
≤ 26A, di/dt ≤ 190A/µs,
DS
= 0 during
80 volt V applied and V
DS GS
irradiation per MlL-STD-750, method 1019, condition A.
V
DD
≤ 100V, T ≤ 150°C
J
Case Outline and Dimensions TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
-B-
6.60 ( .260 )
6.32 ( .249 )
3.78 ( .149 )
3.53 ( .139 )
-A-
1.27 ( .050 )
1.02 ( .040 )
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
13.84 ( .545 )
13.59 ( .535 )
LEGEND
1 - COLL
31.40 ( 1.235 )
30.39 ( 1.199 )
2 - EMIT
3 - GATE
1
2
3
-C-
1.14 ( .045 )
3X
3.81 ( .150 )
0.89 ( .035 )
3.81 ( .150 )
2X
.50 ( .020 )
.25 ( .010 )
M
M
C
C
A
M B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
12
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