JANSR2N7425U [INFINEON]
Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL;
| 型号： | JANSR2N7425U |
| 厂家： | 
Infineon |
| 描述： | Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：875K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91433D
IRHNA9160
JANSR2N7425U
100V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard HEXFET TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA9160
IRHNA93160
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.068
0.068
ID
QPL Part Number
-38A
-38A
JANSR2N7425U
JANSF2N7425U
Description
Features
IRHNA9160 is part of the International Rectifier HiRel
family of products. IR HiRel RAD-Hard HEXFET
technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Low RDS(on)
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
-38
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-24
-152
300
2.4
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
± 20
500
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
-38
30
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
-17
-55 to + 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
Weight
°C
g
300 (for 5s)
3.3 (Typical)
For Footnotes refer to the page 2.
1
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = -1.0mA
BVDSS
-100 ––– –––
––– -0.11 –––
––– ––– 0.068
––– ––– 0.071
-2.0 ––– -4.0
V
BVDSS/TJ
V/°C Reference to 25°C, ID = -1.0mA
V
GS = -12V, ID = -24A
RDS(on)
VGS(th)
VGS = -12V, ID = -38A
Gate Threshold Voltage
V
S
VDS = VGS, ID = -1.0mA
Gfs
IDSS
Forward Transconductance
15
––– –––
V
DS = -15V, ID = -24A
VDS = -80V, VGS = 0V
DS = -80V,VGS = 0V,TJ =125°C
VGS = -20V
GS = 20V
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
––– ––– 290
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
ID = -38A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
––– ––– 170
––– ––– 190
––– ––– 190
72
90
35
nC
ns
VDS = -50V
V
GS = -12V
VDD = -50V
ID = -38A
td(off)
tf
RG = 2.35
GS = -12V
V
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
–––
4.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 6000 –––
––– 1500 –––
––– 400 –––
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– ––– -38
A
ISM
VSD
trr
––– ––– -152
––– ––– -3.3
––– ––– 300
V
TJ = 25°C,IS = -38A, VGS = 0V
TJ = 25°C,IF = -38A,VDD ≤-50V
di/dt = -100A/µs
Reverse Recovery Time
ns
µC
Qrr
Reverse Recovery Charge
––– –––
2.1
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-PC Board
Min.
–––
Typ.
–––
Max.
0.42
–––
Units
RJC
°C/W
–––
1.6
RJ-PCB
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 0.7mH, Peak IL = -38A, VGS = -12V
ISD -38A, di/dt -385A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
300 kRads (Si)2
Parameter
Units
Test Conditions
Min.
-100
-2.0
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
Min.
-100
-2.0
–––
–––
–––
Max.
–––
-5.0
-100
100
-25
BVDSS Drain-to-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
V
VGS = 0V, ID = -1.0mA
VDS = VGS, ID = -1.0mA
VGS = -20V
V
IGSS
IGSS
IDSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
nA
nA
µA
VGS = 20V
VDS = -80V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.068
–––
0.068
VGS = -12V, ID = -24A
Static Drain-to-Source
On-State Resistance (SMD-2)
RDS(on)
–––
–––
0.068
-3.3
–––
–––
0.068
-3.3
VGS = -12V, ID = -24A
VGS = 0V, ID = -38A
VSD
Diode Forward Voltage
V
1. Part numbers IRHNA9160 (JANSR2N7425U)
2. Part numbers IRHNA93160 (JANSF2N7425U)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@ VGS = 0V @ VGS=5V @ VGS=10V @ VGS =15V @ VGS=20V
28 ± 5%
37 ± 5%
283.3 ± 7.5% 42.8 ± 5%
-100
-100
-60
-100
-100
–––
-100
-70
-70
-50
–––
-60
-40
–––
305 ± 5%
345 ± 5%
39 ± 5%
59.9 ± 5%
32.8 ± 5%
–––
-120
-100
-80
-60
-40
-20
0
LET=28 ± 5%
LET=37 ± 5%
LET=59.9 ± 5%
0
5
10
Bias VGS (V)
15
20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
10000
8000
6000
4000
2000
0
20
V
= 0V,
f = 1MHz
C
GS
I
D
= -38 A
C
= C + C
SHORTED
iss
gs
gd ,
gd
ds
V
V
V
= 80V
= 50V
= 20V
C
= C
gd
DS
DS
DS
rss
C
= C + C
ds
oss
16
12
8
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
50
100
150
200 250
300
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
1000
100
10
°
T = 150 C
J
°
T = 25 C
J
1
V
= 0 V
GS
0.1
0.0
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
40
30
20
10
0
25
50
75
100
125
150
°
( C)
T , Case Temperature
C
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
2018-03-09
6
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
Pre-Irradiation
Case Outline and Dimensions — SMD-2
www.infineon.com/irhirel
101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105
2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000
205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
Data and specifications subject to change without notice.
7
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA9160
JANSR2N7425U
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
2018-03-09
International Rectifier HiRel Products, Inc.
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