JANSR2N7472U2 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）
| 型号： | JANSR2N7472U2 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-93856D
IRHNA57163SE
JANSR2N7472U2
130V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
REF: MIL-PRF-19500/684
TECHNOLOGY
5
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHNA57163SE
100K Rads (Si) 0.0135Ω 75A* JANSR2N7472U2
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
= 12V, T = 25°C
Continuous Drain Current
75*
D
GS
GS
C
A
I @ V
D
= 12V, T = 100°C Continuous Drain Current
57
300
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
280
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
04/25/06
IRHNA57163SE, JANSR2N7472U2
Pre-Irradiation
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
130
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.17
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.0135
Ω
V = 12V, I = 57A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
39
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
V
DS
> 15V, I
= 57A Ã
DS
I
= 104V ,V =0V
DSS
DS
GS
µA
—
V
= 104V,
DS
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
160
55
75
35
125
80
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 75A
g
gs
gd
d(on)
r
GS D
V
DS
= 65V
t
t
t
t
V
DD
V
= 65V, I = 75A,
=12V, R = 2.35Ω
GS G
D
ns
d(off)
f
L
+ L
—
Measured from the center of
S
D
nH
drain pad to the center of source
pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5020
1490
116
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
75*
S
A
Pulse Source Current (Body Diode) À
300
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
4.1
V
ns
µC
T = 25°C, I = 75A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 75A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 50V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
1.6
0.5
—
thJC
thJ-PCB
°C/W
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA57163SE, JANSR2N7472U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
130
2.0
—
—
—
—
4.5
100
-100
10
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
I
I
V
GS
= 20V
GSS
GSS
DSS
nA
µA
V
GS
= -20V
V
= 104V, V = 0V
DS GS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
DS(on)
—
0.014
Ω
V
GS
= 12V, I = 45A
D
R
DS(on)
—
—
0.0135
1.2
Ω
V
= 12V, I = 45A
D
GS
V
Diode Forward Voltage
V
V
GS
= 0V, I = 45A
D
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
130
130
130
130
130
120
130
130
30
130
100
—
130
50
—
150
120
90
60
30
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57163SE, JANSR2N7472U2
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
100
10
1
BOTTOM5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
75A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
1
= 50V
V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10
11
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHNA57163SE, JANSR2N7472U2
20
16
12
8
12000
V
I
D
= 75A
= 0V,
f = 1MHz
gd , ds
GS
C
V
V
V
= 104V
= 65V
= 26V
= C + C
gs
C
SHORTED
DS
DS
DS
iss
C
= C
gd
= C + C
ds
rss
10000
8000
6000
4000
2000
0
C
oss
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
100
150
200
250
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µs
1ms
°
T = 25 C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
0ms
V
= 0 V
GS
1.8
1
0.1
0.2
0.6
1.0
1.4
2.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHNA57163SE, JANSR2N7472U2
Pre-Irradiation
RD
100
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
80
60
40
20
0
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA57163SE, JANSR2N7472U2
500
I
D
TOP
34A
60A
75A
15V
400
300
200
100
0
BOTTOM
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
VG
2
S
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNA57163SE, JANSR2N7472U2
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.1 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 75A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 75A, di/dt ≤ 280A/µs,
DS
applied and V = 0 during
GS
SD
DD
104 volt V
V
≤ 130V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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