JANTX1N7064CCU3 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;


型号：	JANTX1N7064CCU3
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN 功效瞄准线二极管
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中文：	中文翻译
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INCH-POUND

MIL-PRF-19500//754

13 August 2009

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE,

TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein

shall consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, Schottky center tap power rectifier

diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1, U3 and U3C (ceramic lid) package.

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Column 1

Types

Column 2

Column 3

Column 4

Column 5

Column 6

RWM

(1)(2)

STG

FSM (3)

ΘJC

t = 8.3 ms

(2)

(3)

and

= +100°C

= +25°C

A (pk)

V dc

A dc

°C/W

°C

1N7064CCU3

1N7064CCU3C

1.75

3.5

-65 to +150

(1) See temperature-current derating curves on figure 2.

(2) Entire package.

(3) Each leg.

1.4 Primary electrical characteristics. R

each leg (figure 3).

= 1.75°C/W maximum entire package; R

ΘJC

= 3.5°C/W maximum

ΘJC

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at http://assist.daps.dla.mil .

AMSC N/A

FSC 5961

MIL-PRF-19500/754

Dimensions

Inches Millimeters

Min Max

10.03 10.29

Ltr

Note

Min

.395

.291

.108

Max

.405

.301

.122

LL1

LL2

LS1

LS2

LW1

LW2

7.39

2.74

7.65

3.12

3.39

0.51

5.84

3.18

1N7064CCU3

1N7064CCU3C

U3 Only

U3C Only

.1195 .1335 3.035

.010

.220

.115

.020

.230

.125

0.25

5.59

2.92

.150 BSC

.075 BSC

3.81 BSC

1.91 BSC

.281

.291

.100

7.14

7.39

2.54

.090

.030

2.29

0.76

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 1. Dimensions and configuration, 1N7064CCU3 and 1N7064CCU3C.

MIL-PRF-19500/754

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

Semiconductor Devices, General Specification for.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or

http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figure 1 herein.

3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein.

3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

MIL-PRF-19500/754

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II herein).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurement

(table E-IV of

MIL-PRF-19500)

JANS level

Method 4066 of MIL-STD-750, condition A,

one pulse, tp = 8.3 ms, I = 0, V = 0,

JANTX and JANTXV levels

Method 4066 of MIL-STD-750, condition A,

one pulse, tp = 8.3 ms, I = 0, V = 0,

RWM

= see 1.3 herein.

FSM

Thermal impedance (see 4.3.2).

FSM

Thermal impedance (see 4.3.2).

9, 10

Avalanche energy test (see 4.3.3).

Not applicable.

Avalanche energy test (see 4.3.3).

Not applicable.

and I

See 4.3.1.

Subgroup 2 and 3, of table I herein, V and Subgroup 2, of table I herein; V and I

R1.

See 4.3.1.

;

F1 F1

; ∆V = ±50 mV (pk); ∆I

= ±100 = ±100 percent

∆V = ±50 mV (pk); ∆I

percent from the initial value or ±10 uA,

whichever is greater.

from the initial value or ±10 uA, whichever is

greater.

4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test

condition A, V = 36 V dc; T = +125°C.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining I , I , t , and t . Measurement delay

M H H MD

time (t

) = 70 µs max. See table III, subgroup 4, and figure 3 herein.

4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of

MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable

of absorbing the reverse energy, as follows: I

= 1A, Vbr = 45 V minimum, L = 100 µH.

MIL-PRF-19500/754

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in

accordance with the applicable steps of table II herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.

Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (V ) and

reverse leakage test (I ) herein. Delta measurements shall be in accordance with table II herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

1037

Condition

∆T = +85°C, I = 2 A minimum for 2,000 cycles.

1038

Condition A, V = 36 V dc, T = +125°C, t = 340 hours min; heat sinking allowed.

R J

This test shall be extended to 1,000 hours for each wafer lot.

4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

1037

Condition

∆T = +85°C, I = 2 A minimum for 2,000 cycles.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

table I, subgroup 2, forward voltage test (V ) and reverse leakage test (I ) herein. Delta measurements shall be in

accordance with table II herein.

Subgroup

Method

2036

Condition

Not required.

4081

Limit for thermal resistance is 3.5°C/W for each diode.

∆T = +85°C, I = 2 A minimum for 6,000 cycles.

1037

1038

Condition A, V = 36 V dc, T = +125°C, t = 1,000 hours min; heat sinking

R J

allowed. (for TX and TXV only).

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in

accordance with table II herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

MIL-PRF-19500/754

TABLE I. Group A inspection.

MIL-STD-750

Conditions

Limits

Min Max

Inspection

Symbol

Unit

Method

2071

Subgroup 1

Visual and mechanical

examination

Subgroup 2

4011

4016

Pulsed test (see 4.5.1)

= 10 A (pk)

Forward voltage

0.68

0.80

V dc

Pulsed test (see 4.5.1)

= 15 A (pk)

Forward voltage

Pulsed test (see 4.5.1)

= 30 A (pk)

1.09

0.08

V dc

DC method;

Reverse current

Subgroup 3

= 45 V

mA dc

High temperature

operation:

= +125 °C

4011

4016

Forward voltage

Reverse current

Pulsed test (see 4.5.1)

= 10 A (pk)

0.62

0.72

0.95

10.0

V dc

Pulsed test (see 4.5.1)

= 15 A (pk)

Pulsed test (see 4.5.1)

= 30 A (pk)

V dc

DC method;

= 45 V

mA dc

Low temperature

operation:

= -55°C

Forward voltage

4011

Pulsed test (see 4.5.1)

= 10 A (pk)

0.72

0.81

1.09

V dc

Pulsed test (see 4.5.1)

= 15 A (pk)

Pulsed test (see 4.5.1)

= 30 A (pk)

See footnotes at end of table.

MIL-PRF-19500/754

TABLE I. Group A inspection - Continued.

MIL-STD-750

Conditions

Limits

Min Max

Inspection 1/

Symbol

Unit

Method

4001

Subgroup 4

Junction capacitance

= 5 V dc, f = 1 MHz,

375

= 50 mV (p-p)

SIG

Subgroup 5

Not applicable

Subgroup 6

Surge

4066

See 1.3, column 4 herein, ten surges each

diode. 60 seconds between surges,

(see 4.5.1)

Electrical

See table I, subgroup 2 herein

measurements

Subgroup 7

Dielectric withstanding

voltage 3/

1016

4023

= 500 V dc; all leads shorted;

DWV

µA

measure from leads to case

Scope display

evaluation

Stable only

Electrical

See table I, subgroup 2 herein

measurements

1/ For sampling plan, see MIL-PRF-19500.

2/ Electrical characteristics apply to all package styles and polarities.

3/ Not required for IN7064CCU3C

MIL-PRF-19500/754

TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/

MIL-STD-750

Limits

Min Max

Step

Inspection

Symbol

Unit

Method

4011

Conditions

Forward voltage

∆V

∆I

±50 mV dc from initial

reading.

= 15 A (pk)

pulsed (see 4.5.1)

Reverse current

4016

3101

= 45 V

±100 pecent from initial

reading or ±10uA

whichever is greater.

Thermal impedance

See 4.3.2

ΘJX

1/ Each individual diode.

2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table II herein, steps 1, 2, and 3.

b. Subgroup 5, see table II herein, steps 1 and 2.

3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1, 2, and 3.

b. Subgroup 3, see table II herein, steps 1, 2, and 3.

c. Subgroup 6, see table II herein, steps 1 and 2.

4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels.

b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels.

5/ Devices which exceed the table I limits for this test shall not be accepted.

6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows:

a. Subgroup 1, see table III herein, steps 1, 2, and 3.

b. Subgroup 2, see table III herein, steps 1 and 2.

MIL-PRF-19500/754

TABLE III. Group E inspection (all quality levels) – for qualification and requalification only.

MIL-STD-750

Inspection

Qualification

Method

Conditions

Subgroup 1

n = 12, c = 0

Temperature cycling

(air to air)

1051

1071

Test condition G, 500 cycles, -55°C to +150°C.

Hermetic seal

Electrical

See table I, subgroup 2 and table II herein.

measurements

Subgroup 2

Life test

n = 12, c = 0

1048

t = 1,000 hours, T = +125°C, V = 80% rated voltage (see

1.3, column 2 herein).

Electrical

See table I subgroup 2 and table II herein.

measurements

Subgroup 4

Thermal impedance

curves

See MIL-PRF-19500.

Subgroup 6

ESD

n = 3

1020

4066

Subgroup 10 1/

Surge

n = 5, c = 0

Condition A, T = +25°C, I

= 85 A, 100 surges of 8.3 ms

FSM

half sine wave. V = 0; I = 0 A pk.

Electrical

measurements

See table I subgroup 2 (V and I only).

F R

1/ Each individual diode.

MIL-PRF-19500/754

TEMPERATURE-CURRENT DERATING CURVE

1N7064CCU3 and 1N7064CCU3C

Switch mode operation, 80 percent duty cycle: T (°C) (case).

ΘJC

= 1.75 °C/W.

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

the appropriate current for the desired maximum T allowed.

2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show current rating where most users want to limit

T in their application.

FIGURE 2. Temperature-current derating curve (per package) for 1N7064CCU3 and1N7064CCU3C.

MIL-PRF-19500/754

10.0

Notes:

1. Duty factor D = t 1/t2

2. Peak T = Pdm x Z

+ T

ΘJC

D=0.5

D=0.4

D=0.3

1.0

D=0.2

D=0.1

Single Pulse

(Thermal Resistance)

0.1

0.0001

0.001

0.01

0.1

t1, RECTANGULAR PULSE DURATION (Sec)

FIGURE 3. Thermal impedance (for each leg), 1N7064CCU3 and 1N7064CCU3C.

MIL-PRF-19500/754

Input pulse R = 50 ohms

= 10 Volts, R = 0.1 ohms

= 50 ohms

L = 100 µH

Duty cycle ≤ 1 percent, T = IRF350/2N6768 or equivalent

Procedure:

1. With S open, adjust pulse width to test current of 1 amp through R .

2. Close S, verify test current with current sense.

3. Read peak output voltage (see 4.3.3).

FIGURE 4. Avalanche energy test circuit.

MIL-PRF-19500/754

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead material, finish, and formation (see 3.4.2).

d. Product assurance level and type designator.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil . An online listing of products qualified to this specification may be found in the Qualified Products

Database (QPD) at http://assist.daps.dla.mil .

6.4 Cross reference substitution list. A PIN for PIN replacement table follows, and these devices are directly

interchangeable.

Non-preferred PIN

Preferred PIN

30CLJQ045

30CLJCQ045

JANS, JANTXV, JANTX, JAN1N7064CCU3

JANS, JANTXV, JANTX, JAN1N7064CCU3C

Custodians:

Army - CR

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2009-061)

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at http://assist.daps.dla.mil .

JANTX1N7064CCU3 [INFINEON]

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