JANTX1N7069T1 [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3;型号: | JANTX1N7069T1 |
厂家: | Infineon |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3 局域网 功效 瞄准线 二极管 |
文件: | 总4页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94232D
35GQ100
JANS1N7069T1
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
JANTX1N7069T1
JANTXV1N7069T1
35Amp, 100V
Ref: MIL-PRF-19500/761
MajorRatings andCharacteristics
Description/Features
The 1N7069T1 Schottky rectifier has been expressly
designed to meet the rigorous requirements of high
reliability environments. It is packaged in the hermetic
isolated TO-254AApackage. The device's forward
voltage drop and reverse leakage current are optimized
for the lowest power loss and the highest circuit efficiency
for typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Characteristics
IF(AV)
1N7069T1 Units
35
100
270
A
V
A
VRRM
IFSM @ tp = 8.3ms half-sine
V @ 35Apk, TJ =125°C
F
1.0
V
• Hermetically Sealed
TJ,Tstg Operating and storage -65 to 150
°C
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ringfor Enhanced Ruggedness and Longterm
Reliability
• Lightweight
• ESD Rating: Class NS per MIL-STD-750, Method 1020
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
CASE STYLE
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTES:
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONF ORMS T O JE DE C OUT L INE T O-254AA.
CATHODE OPEN ANODE
CaseOutlineandDimensions-TO-254AA
www.irf.com
1
10/30/12
35GQ100, 1N7069T1
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
1N7069T1
100
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
35
A
50% duty cycle @ TC = 81°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
270
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
1.0
1.42
1.05
1.52
1.0
V
@ 35A
TJ=-55°C
TJ = 25°C
TJ = 125°C
See Fig. 1
V
@ 70A
V
@ 35A
V
@ 70A
V
@ 35A
1.47
0.036
7.5
V
@ 70A
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
See Fig. 2
VR = rated VR
28
CT
LS
Max. Junction Capacitance
Typical Series Inductance
1375
7.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-65 to 150
-65 to 150
1.1
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size (Typical)
Case Style
9.3
g
200X200
mils
TO-254AA
Pulse Width < 300µs, Duty Cycle < 2%
2
www.irf.com
35GQ100, 1N7069T1
1000
100
125°C
10
100°C
75°C
1
100
10
1
0.1
25°C
0.01
0.001
0.0001
0
20
40
60
80
100
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
1000
100
Tj = 125°C
Tj = 25°C
T
= 25°C
J
Tj = -55°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V (V)
F
0
20
40
60
80
100
Reverse Voltage -V (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
35GQ100, 1N7069T1
10
D = 0.5
D = 0.4
D = 0.3
1
D = 0.2
D = 0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
160
= 1.1°C/W
R
hJC
t
140
120
100
80
DC
80 % Square Wave (D=0.50)
Rated V applied
R
60
40
20
0
0
5
10 15 20 25 30 35 40
Average Forward Current - I (A)
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
4
www.irf.com
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