JANTX1N7069T1 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3;
JANTX1N7069T1
型号: JANTX1N7069T1
厂家: Infineon    Infineon
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3

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中文:  中文翻译
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PD-94232D  
35GQ100  
JANS1N7069T1  
SCHOTTKY RECTIFIER  
HIGH EFFICIENCY SERIES  
JANTX1N7069T1  
JANTXV1N7069T1  
35Amp, 100V  
Ref: MIL-PRF-19500/761  
MajorRatings andCharacteristics  
Description/Features  
The 1N7069T1 Schottky rectifier has been expressly  
designed to meet the rigorous requirements of high  
reliability environments. It is packaged in the hermetic  
isolated TO-254AApackage. The device's forward  
voltage drop and reverse leakage current are optimized  
for the lowest power loss and the highest circuit efficiency  
for typical high frequency switching power supplies and  
resonent power converters. Full MIL-PRF-19500 quality  
conformance testing is available on source control  
drawings to TX, TXV and S quality levels.  
Characteristics  
IF(AV)  
1N7069T1 Units  
35  
100  
270  
A
V
A
VRRM  
IFSM @ tp = 8.3ms half-sine  
V @ 35Apk, TJ =125°C  
F
1.0  
V
• Hermetically Sealed  
TJ,Tstg Operating and storage -65 to 150  
°C  
• Low Forward Voltage Drop  
• High Frequency Operation  
• Guard Ringfor Enhanced Ruggedness and Longterm  
Reliability  
• Lightweight  
• ESD Rating: Class NS per MIL-STD-750, Method 1020  
0.12 [.005]  
13.84 [.545]  
13.59 [.535]  
6.60 [.260]  
6.32 [.249]  
3.78 [.149]  
3.53 [.139]  
1.27 [.050]  
1.02 [.040]  
CASE STYLE  
A
20.32 [.800]  
20.07 [.790]  
17.40 [.685]  
16.89 [.665]  
B
13.84 [.545]  
13.59 [.535]  
1
2
3
14.48 [.570]  
12.95 [.510]  
C
0.84 [.033]  
MAX.  
1.14 [.045]  
0.89 [.035]  
3X  
3.81 [.150]  
3.81 [.150]  
2X  
0.36 [.014]  
B
A
NOTES:  
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
3. CONTROLLING DIMENSION: INCH.  
4. CONF ORMS T O JE DE C OUT L INE T O-254AA.  
CATHODE OPEN ANODE  
CaseOutlineandDimensions-TO-254AA  
www.irf.com  
1
10/30/12  
35GQ100, 1N7069T1  
Voltage Ratings  
Part number  
Max. DC Reverse Voltage (V)  
1N7069T1  
100  
VR  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
Limits Units  
Conditions  
IF(AV) Max. AverageForwardCurrent  
35  
A
50% duty cycle @ TC = 81°C, square waveform  
See Fig. 5  
IFSM Max. Peak One Cycle Non - Repetitive  
Surge Current  
270  
A
@ tp = 8.3 ms half-sine  
ElectricalSpecifications  
Parameters  
Limits Units  
Conditions  
VFM  
Max. ForwardVoltageDrop  
1.0  
1.42  
1.05  
1.52  
1.0  
V
@ 35A  
TJ=-55°C  
TJ = 25°C  
TJ = 125°C  
See Fig. 1  
V
@ 70A  
V
@ 35A  
V
@ 70A  
V
@ 35A  
1.47  
0.036  
7.5  
V
@ 70A  
IRM  
Max. Reverse Leakage Current  
mA  
mA  
mA  
TJ = 25°C  
TJ = 100°C  
TJ = 125°C  
See Fig. 2  
VR = rated VR  
28  
CT  
LS  
Max. Junction Capacitance  
Typical Series Inductance  
1375  
7.8  
pF  
nH  
VR = 5VDC ( 1MHz, 25°C )  
Measured from anode lead to cathode lead  
6mm ( 0.025 in.) from package  
Thermal-MechanicalSpecifications  
Parameters  
Limits Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-65 to 150  
-65 to 150  
1.1  
°C  
Tstg  
Max.StorageTemperatureRange  
°C  
RthJC Max. Thermal Resistance, Junction  
to Case  
°C/W  
DCoperation  
See Fig. 4  
wt  
Weight(Typical)  
Die Size (Typical)  
Case Style  
9.3  
g
200X200  
mils  
TO-254AA  
 Pulse Width < 300µs, Duty Cycle < 2%  
2
www.irf.com  
35GQ100, 1N7069T1  
1000  
100  
125°C  
10  
100°C  
75°C  
1
100  
10  
1
0.1  
25°C  
0.01  
0.001  
0.0001  
0
20  
40  
60  
80  
100  
Reverse Voltage - V (V)  
R
Fig. 2 - Typical Values of Reverse Current  
Vs. Reverse Voltage  
10000  
1000  
100  
Tj = 125°C  
Tj = 25°C  
T
= 25°C  
J
Tj = -55°C  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Forward Voltage Drop - V (V)  
F
0
20  
40  
60  
80  
100  
Reverse Voltage -V (V)  
Fig. 1 - Max. Forward Voltage Drop Characteristics  
R
Fig. 3 - Typical Junction Capacitance Vs.  
Reverse Voltage  
www.irf.com  
3
35GQ100, 1N7069T1  
10  
D = 0.5  
D = 0.4  
D = 0.3  
1
D = 0.2  
D = 0.1  
SINGLE PULSE  
( THERMAL RESPONSE )  
0.1  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics  
160  
= 1.1°C/W  
R
hJC  
t
140  
120  
100  
80  
DC  
80 % Square Wave (D=0.50)  
Rated V applied  
R
60  
40  
20  
0
0
5
10 15 20 25 30 35 40  
Average Forward Current - I (A)  
F(AV)  
Fig. 5 - Max. Allowable Case Temperature Vs.  
Average Forward Current  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 10/2012  
4
www.irf.com  

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