JANTXV22GQ100 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-254AA;


型号：	JANTXV22GQ100
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-254AA 局域网二极管
文件：	总4页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 20353C

22GQ100

SCHOTTKY RECTIFIER

30 Amp

Major Ratings and Characteristics

Desciption/Features

The 22GQ100 Schottky rectifier has been expressly

designed to meet the rigorous requirements of hi-rel

environments. It is packaged in the hermetic, isolated,

TO-254AA package and has extremely low reverse

leakage at high temperature. Full MIL-PRF-19500 quality

conformance testing is available on source controlled

drawings to JANTX, JANTXV, or JANS levels. Typical

applications include switching power supplies and

resonant power converters.

Characteristics

22GQ100

Units

I_F(AV)Rectangular

waveform

V_RRM

100

400

0.90

I_FSM@ t_p= 8.3ms sine

@ 30Apk, T_J= 125°C

• Hermetically sealed

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term

reliability

T_J, T_stgOperating and storage -55 to 150

°C

• Electrically isolated

• Ceramic eyelets

CASE STYLE

(ISOLATEDBASE)

NOTES:

1. DIMENSIONING ANDTOLERANCING PERANSIY14.5M-1982

2. ALL DIMENSIONS ARE SHOW IN MILLIMETERS (INCHES).

CATHODE

ANODE

Conforms to JEDEC Outline TO-254AA

Dimensions in millimiters and (inches)

www.irf.com

3/5/99

22GQ100

Voltage Ratings

Part number

Max. DC Reverse Voltage (V)

22GQ100

100

V_R

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

22GQ100 Units

Conditions

I_F(AV)Max. Average Forward Current

50% duty cycle @ T_C= 100°C, rectangular waveform

See Fig. 4

I_FSMMax. Peak One Cycle Non - Repetitive

Surge Current

400

@ t_p= 8.3 ms sine

Electrical Specifications

Parameters

22GQ100 Units

Conditions

V_FM

Max. ForwardVoltageDrop

1.10

1.60

0.90

1.30

0.8

@ 30A

T_J= 25°C

See Fig. 1

@ 60A

@ 30A

T_J= 125°C

@ 60A

I_RM

Max. Reverse Leakage Current

See Fig. 2

T_J= 25°C

V_R= rated V_R

T_J= 125°C

C_T

L _S

Max. Junction Capacitance

Typical Series Inductance

1400

8.7

V_R= 5V_DC, (test signal range 100KHz to 1MHz) 25°C

Measured lead to lead 5mm from package body

Thermal-Mechanical Specifications

Parameters

22GQ100 Units

Conditions

T_J

Max.Junction Temperature Range

-55 to 150

1.00

°C

T_stg

Max. Storage Temperature Range

°C

R_thJCMax. Thermal Resistance, Junction

to Case

°C/W

DC operation

See Fig. 5

R_thCSTypical Thermal Resistance, Case

to Heatsink

0.21

°C/W

Mounting surface, smooth and greased

Weight (Typical)

Die Description (Square)

Case Style

9.3

0.200

inches

TO-254AA

JEDEC

Pulse Width < 300µs, Duty Cycle < 2%

www.irf.com

22GQ100

100

= 150°C

125°C

100°C

0.1

0.01

0.001

0.0001

25°C

100

Reverse Voltage - V (V)

Fig. 1 - Max. Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current

Vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance Vs.

Reverse Voltage

Fig. 4 - Max. Allowable Case Temperature Vs.

Average Forward Current

www.irf.com

22GQ100

Fig.5 - Max. Thermal Impedance Z_thJCcharacteristics

WORLD HEADQUARTERS:233KansasSt., ElSegundo, California90245, Tel:(310)3223331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY:Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IRSOUTHEASTASIA: 1KimSengPromenade,GreatWorldCityWestTower,13-11,Singapore237994Tel:++ 65 8384630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/

Data and specifications subject to change without notice.

3/99

www.irf.com

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