JANTXV2N6764 [INFINEON]

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A); 晶体管N沟道（ VDSS = 100V ， RDS（ON） = 0.055ohm ，ID = 38A ）


型号：	JANTXV2N6764
厂家：	Infineon
描述：	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) 晶体管N沟道（ VDSS = 100V ， RDS（ON） = 0.055ohm ，ID = 38A ）晶体晶体管
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PD - 90337G

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-204AA/AE)

IRF150

JANTX2N6764

JANTXV2N6764

[REF:MIL-PRF-19500/543]

100V, N-CHANNEL

Product Summary

Part Number BVDSS

RDS(on)

IRF150

100V

0.055Ω 38A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

TO-3

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n EaseofParalleling

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

= 10V, T = 100°C Continuous Drain Current

152

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-SourceVoltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

150

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

dv/dt

5.5

V/ns

-55 to 150

STG

StorageTemperature Range

^oC

LeadTemperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (typical)

For footnotes refer to the last page

www.irf.com

08/21/01

IRF150

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.13

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.055

0.065

4.0

= 10V, I =24A➀

GS D

DS(on)

Ω

=10V, I =38A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

9.0

—

= V , I =250µA

GS(th)

Ω

—

S (

)

> 15V, I

=24A➀

V =80V, V =0V

DS GS

DSS

µA

—

250

=80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

8.0

—

6.1

100

-100

125

=20V

GSS

=-20V

=10V, ID 38A

=50V

=50V, I =38A,

d(on)

190

170

130

—

=10V,R =2.35Ω

GS G

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

S +

Measured from the center of

drain pad to center of source

pad

Input Capacitance

—

3700

1100

200

= 0V, V

=25V

f = 1.0MHz

iss

GS DS

oss

rss

Output Capacitance

—

Reverse Transfer Capacitance

Source-DrainDiodeRatingsandCharacteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

Pulse Source Current (Body Diode) ➀

152

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.9

500

2.9

T = 25°C, I =38A, V

= 0V ➀

µc

T = 25°C, I = 38A, di/dt ≤100A/µs

≤ 30V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction to Case

—

0.83

thJC

°C/W

thJA

Junction to Ambient

Typical socket mount

For footnotes refer to the last page

www.irf.com

IRF150

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRF150

13 a& b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRF150

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRF150

15V

DRIVER

D S

D.U.T

D D

₂V_0V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRF150

Foot Notes:

➀➀ I ≤ 38A, di/dt ≤300A/µs,

➀➀Repetitive Rating; Pulse width limited by

≤ 100V, T ≤ 150°C

maximum junction temperature.

Suggested RG =2.35 Ω

➀➀➀V

=50V, starting T = 25°C,

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Peak I = 38A,➀V

=10V

Case Outline and Dimensions —TO-204AE (Modified TO-3)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 08/01

www.irf.com

JANTXV2N6764 [INFINEON]

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