JANTXV2N6800 [INFINEON]

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A); 功率MOSFET N沟道（ BVDSS = 400V ， RDS（ON） = 1.0ohm ，ID = 3.0A ）


型号：	JANTXV2N6800
厂家：	Infineon
描述：	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A) 功率MOSFET N沟道（ BVDSS = 400V ， RDS（ON） = 1.0ohm ，ID = 3.0A ）晶体晶体管开关脉冲
文件：	总6页 (文件大小：201K)
中文：	中文翻译
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Provisional Data Sheet No. PD-9.432B

JANTX2N6800

JANTXV2N6800

[REF:MIL-PRF-19500/557]

HEXFET^®POWER MOSFET

[GENERIC:IRFF330]

N-CHANNEL

400 Volt, 1.0Ω HEXFET

Product Summary

Part Number

JANTX2N6800

JANTXV2N6800

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

3.0A

400V

1.0Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6800, JANTXV2N6800 Units

@ V

= 10V, T = 25°C Continuous Drain Current

3.0

@ V

= 10V, T = 100°C Continuous Drain Current

2.0

12.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.20

dv/dt

±20

4.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

^oC

(0.063 in. (1.6mm) from

300

case for 10.5 seconds)

0.98 (typical)

Weight

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JANTX2N6800, JANTXV2N6800 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.37

DSS

Voltage

➃

= 10V, I = 2.0A

GS D

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.0

—

1.0

1.15

4.0

—

250

DS(on)

Ω

S ( )

= 10V, I = 3.0A

GS D

= V , I = 250µA

GS(th)

Ω

> 15V, I

= 2.0A ➃

= 0.8 x Max Rating,V = 0V

DSS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

19.1

1.0

6.7

—

5.0

100

-100

5.8

19.9

—

= 20V

GSS

= -20V

GSS

= 10V, I = 3.0A

= Max. Rating x 0.5

see figures 6 and 13

= 200V, I = 3.0A,

d(on)

DD D

= 7.5Ω, VGS= 10V

d(off)

see figure 10

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

620

200

—

= 0V, V

f = 1.0 MHz

see figure 5

= 25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

3.0

12.0

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

700

6.2

µC

T = 25°C, I = 3.0A, V

= 0V ➃

T = 25°C, I = 3.0A, di/dt ≤ 100A/µs

≤ 50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

5.0

thJC

thJA

Junction-to-Ambient

—

175

K/W

Typical socket mount

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JANTX2N6800, JANTXV2N6800 Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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JANTX2N6800, JANTXV2N6800 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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JANTX2N6800, JANTXV2N6800 Device

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 13a — Gate Charge Test Circuit

Fig. 13b — Basic Gate Charge Waveform

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JANTX2N6800, JANTXV2N6800 Device

➂ I

≤ 3.0A, di/dt ≤ 90A/µs,

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

≤ BV , T ≤ 150°C

DSS J

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➁ @ V

= 50V, Starting T = 25°C,

➄ K/W = °C/W

= [0.5

(I ) [BV

/(BV

-V )]

DSS DD

W/K = W/°C

DSS

= 10V, 25 ≤ R ≤ 200Ω

Peak I = 3.0A, V

Case Outline and Dimensions — TO-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

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