JANTXV2N6802U [INFINEON]

HEXFET TRANSISTOR; HEXFET晶体管


型号：	JANTXV2N6802U
厂家：	Infineon
描述：	HEXFET TRANSISTOR HEXFET晶体管晶体晶体管开关脉冲
文件：	总8页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Provisional Data Sheet No. PD - 9.1719

IRFE430

REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U

HEXFET^®TRANSISTOR

JANTXV2N6802U

[REF:MIL-PRF-19500/557]

N-CHANNEL

Product Summary

500Volt, 1.50Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

Part Number

BVDSS

RDS(on)

IRFE430

500V

1.50Ω

2.5A

Features:

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Small footprint

Surface Mount

Lightweight

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability.They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Absolute Maximum Ratings

Parameter

IRFE430, JANTX-, JANTXV-, 2N6802U Units

@ V

= 10V, T = 25°C Continuous Drain Current

2.5

@ V

= 10V, T = 100°C Continuous Drain Current

1.5

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

0.20

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

0.31

6.2

dv/dt

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

300 ( for 5 seconds)

0.42 (typical)

Surface Temperature

Weight

12/3097

IRFE430, JANTX-, JANTXV-, 2N6802U Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

500

—

=0 V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.59

V/°C

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

—

1.50

1.725

4.0

= 10V, I = 1.5A

DS(on)

Ω

= 10V, I = 2.5A

= V , I = 250µA

GS(th)

Ω

—

S ( )

> 15V, I

= 1.5A

= 0.8 x Max Rating,V =0V

DSS

DS GS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

1.8

100

-100

= 20 V

= -20V

GSS

= 10V, I = 2.5A

GS D

V = Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

4.5

d(on)

= 250V, I = 2.5A,

DD D

Rise Time

Turn-Off Delay Time

= 7.5Ω

d(off)

Fall Time

symbol show-

Measured from drain pad to

die.

Modified MOSFET

ing the internal inductances.

Internal Drain Inductance

—

Measured from center of

source pad to the end of

source bonding wire.

Internal Source Inductance

—

4.3

—

Input Capacitance

—

750

240

—

= 0V, V

= 25 V

f = 1.0MHz

iss

GS DS

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

2.5

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

900

2.0

T = 25°C, I = 2.5A, V

= 0V

T = 25°C, I = 2.5A, di/dt ≤ 100A/µs

µC

≤ 50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

Junction-to-Case

—

5.0

K/W ꢀ

Junction-to-PC Board

—

Soldered to a copper clad PC board

www.irf.com

thJPCB

Details of notes through ꢀare on the last page

IRFE430, JANTX-, JANTXV-, 2N6802U Device

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TOP

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

100

2.5A

2.5

2.0

1.5

1.0

0.5

0.0

T = 150 C

T = 25 C

= 50V

= 10V

20µs PULSE WIDTH

0.1

4.0

5.0

6.0

7.0 8.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRFE430, JANTX-, JANTXV-, 2N6802U Device

1600

I = 2.5A

= 0V,

f = 1MHz

= C + C

SHORTED

iss

gd ,

= 400V

= 250V

= 100V

= C

rss

= C + C

oss

1200

800

400

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

= 25 C

10ms

= 150 C

= 0 V

Single Pulse

0.1

0.4

100

1000

10000

0.6

0.8

1.0

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRFE430, JANTX-, JANTXV-, 2N6802U Device

R_D

2.5

2.0

1.5

1.0

0.5

0.0

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFE430, JANTX-, JANTXV-, 2N6802U Device

0.80

0.60

0.40

0.20

0.00

TOP

1.1A

1.6A

BOTTOM 2.5A

1 5V

DRIVER

D.U.T

D D

10V

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

10V

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRFE430, JANTX-, JANTXV-, 2N6802U Device

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

www.irf.com

IRFE430, JANTX-, JANTXV-, 2N6802U Device

Notes:

≤ 2.5A, di/dt ≤ 86 A/µs,

Repetitive Rating; Pulse width limited by

@ V

= 50 V, Starting T = 25°C,

= [0.5

(I ²) ]

≤ BV

, T ≤ 150°C

DSS J

maximum junction temperature.

Refer to current HEXFET reliability report.

Suggested R_G= 2.35Ω

Peak I = 2.5A, V

=10 V, 25 ≤ R ≤ 200Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

ꢀK/W = °C/W

Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package

IR Case Style Leadless Chip Carrier (LCC)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

12/97

www.irf.com

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