JANTXV2N6804 [INFINEON]

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A); 晶体管P- CHANNEL （ VDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -11A ）


型号：	JANTXV2N6804
厂家：	Infineon
描述：	TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) 晶体管P- CHANNEL （ VDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -11A ）晶体晶体管功率场效应晶体管开关脉冲局域网
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PD - 90549C

IRF9130

JANTX2N6804

JANTXV2N6804

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/562]

100V, P-CHANNEL

Product Summary

Part Number

BVDSS

RDS(on)

IRF9130

-100V

0.30 Ω -11A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

TO-3

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of parelleling and temperature

stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 0V, T = 25°C

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

-11

-7.0

-50

= 0V, T = 100°C

@ T = 25°C

W/°C

0.60

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

dv/dt

-5.5

-55 to 150

V/ns

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (typical)

For footnotes refer to the last page

www.irf.com

01/22/01

IRF9130

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0mA

Reference to 25°C, I = -1.0mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.087

V/°C

DSS

Static Drain-to-Source On-State

Resistance

—

0.30

0.35

-4.0

—

=-10V, I =-7.0A➀

DS(on)

Ω

=-10V, I =-11A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

= V , I =-250µA

GS(th)

Ω

S (

)

>-15V, I

=-7.0A➀

—

-25

-250

=-80V, V =0V

DS GS

DSS

µA

—

=-80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.1

-100

100

=-20V

GSS

=-10V, ID -11A

GS =

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

7.1

=-50V

d(on)

=-50V, I =-11A,

140

—

R =7.5Ω

n s

Turn-Off Delay Time

Fall Time

d(off)

Total Inductance

S +

Measured from the center of

drain pad to center of source

pad

Input Capacitance

—

860

350

125

= 0V, V =25V

GS DS

iss

Output Capacitance

—

f = 1.0MHz

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

-11

-50

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-4.7

250

3.0

µc

T = 25°C, I =-11A, V

= 0V ➀

T = 25°C, I =-11A, di/dt ≤-100A/µs

≤-50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction to Case

—

1.67

thJC

thJA

°C/W

Junction-to-Ambient

soldered to a 2” square copper-clad board

For footnotes refer to the last page

www.irf.com

IRF9130

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF9130

13 a& b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF9130

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF9130

D.U.T

DRIVER

-10V

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRF9130

Foot Notes:

➀➀ I ≤-11A, di/dt ≤-140A/µs,

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

≤ -100V, T ≤ 150°C

Suggested RG =7.5 Ω

➀➀➀V

=-25V, starting T = 25°C,

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Peak I = -11A,

Case Outline and Dimensions —TO-204AA (Modified TO-3)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 1/01

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