JANTXV2N6845 [INFINEON]

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A); POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.60ohm ，ID = -4.0A ）


型号：	JANTXV2N6845
厂家：	Infineon
描述：	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.60ohm ，ID = -4.0A ）晶体晶体管功率场效应晶体管开关脉冲局域网
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中文：	中文翻译
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Provisional Data Sheet No. PD-9.552B

JANTX2N6845

JANTXV2N6845

[REF:MIL-PRF-19500/563]

HEXFET^®POWER MOSFET

[GENERIC:IRFF9120]

P-CHANNEL

-100 Volt, 0.60Ω HEXFET

Product Summary

Part Number

JANTX2N6845

JANTXV2N6845

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

-4.0A

-100V

0.60Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6845, JANTXV2N6845 Units

@ V

= -10V, T = 25°C Continuous Drain Current

-4.0

@ V

= -10V, T = 100°C Continuous Drain Current

-2.6

-16

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.16

dv/dt

±20

-5.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

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JANTX2N6845, JANTXV2N6845 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0 mA

DSS

V/°C Reference to 25°C, I = -1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.10

DSS

Voltage

➃

= -10V, I = -2.6A

Static Drain-to-Source

On-State Resistance

GateThreshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

-2.0

1.25

—

0.60

0.69

-4.0

—

-25

-250

DS(on)

Ω

S ( )

= -10V, I = -4.0A

= V

, I = -250µA

GS D

GS(th)

> -15V, I

Ω

= -2.6A ➃

= 0.8 x Max Rating,V = 0V

DSS

= 0.8 x Max Rating

µA

—

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

4.3

1.3

1.0

—

5.0

-100

100

16.3

4.7

9.0

100

= -20V

= 20V

GSS

= -10V, I = -4.0A

= Max. Rating x 0.5

see figures 6 and 13

= -50V, I = -4.0A,

d(on)

DD D

= 7.5Ω, VGS = -10V

d(off)

see figure 10

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

—

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

380

170

—

= 0V, V

f = 1.0 MHz

see figure 5

= -25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

-4.0

-16

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-4.8

200

3.1

µC

T = 25°C, I = -4.0A, V

= 0V ➃

T = 25°C, I = -4.0A, di/dt ≤ -100A/µs

≤ -50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

6.25

thJC

thJA

Junction-to-Ambient

—

175

K/W

Typical socket mount

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JANTX2N6845, JANTXV2N6845 Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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JANTX2N6845, JANTXV2N6845 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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JANTX2N6845, JANTXV2N6845 Device

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 13b — Basic Gate Charge Waveform

Fig. 13a — Gate Charge Test Circuit

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JANTX2N6845, JANTXV2N6845 Device

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

➂ I

≤ -4.0A, di/dt ≤ -110A/µs,

≤ BV , T ≤ 150°C

DSS

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➁ @ V

= -25V, Starting T = 25°C,

= [0.5

➄ K/W = °C/W

(I ²) [BV

/(BV

-V )]

DSS

DSS DD

W/K = W/°C

Peak I = -4.0A, V

= -10V, 25 ≤ R ≤ 200Ω

Case Outline and Dimensions — TO-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

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