JANTXV2N7335 [INFINEON]

POWER MOSFET THRU-HOLE (MO-036AB); 功率MOSFET直通孔（ MO- 036AB ）


型号：	JANTXV2N7335
厂家：	Infineon
描述：	POWER MOSFET THRU-HOLE (MO-036AB) 功率MOSFET直通孔（ MO- 036AB ）晶体晶体管功率场效应晶体管开关脉冲 CD
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PD - 90397G

IRFG9110

JANTX2N7335

JANTXV2N7335

REF:MIL-PRF-19500/599

100V, QUAD P-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number RDS(on) ID

IRFG9110

1.4Ω -0.75A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance. HEXFET tran-

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-0.75

-0.5

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-3.0

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

1.3 (typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

04/16/02

IRFG9110

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.098

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

1.4

1.73

-4.0

—

= -10V, I = -0.5A➀

GS D

DS(on)

Ω

= -10V, I = -0.75A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

0.67

—

= V , I = -250µA

GS(th)

Ω

S ( )

> -15V, I

= -0.5A➀

-25

V = -80V, V = 0V

DS GS

DSS

µA

—

-250

= -80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

-100

100

7.0

8.0

= -20V

GSS

=20V

= -10V, ID -0.75A

= -50V

= -50V, I = -0.75A

= -10V, R =7.5Ω

d(on)

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

—

nH Measured from drain lead (6mm/

0.25in. from package) to source lead

(6mm/0.25in. from package)

S +

Input Capacitance

—

200

= 0V, V

= -25V

iss

f = 1.0MHz

Output Capacitance

—

oss

rss

Reverse Transfer Capacitance

Source-DrainDiodeRatingsandCharacteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

-0.75

-3.0

-5.5

200

9.0

T = 25°C, I = -0.75A, V

= 0V ➀

Reverse Recovery Time

µc

T = 25°C, I = -0.75A, di/dt ≤-100A/µs

Reverse Recovery Charge

≤ -50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

thJC

thJA

°C/W

Junction to Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFG9110

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFG9110

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFG9110

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

90%

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFG9110

D.U.T

DRIVER

-10V

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-10V

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRFG9110

Foot Notes:

➀➀ I

≤ -0.75A, di/dt ≤ −75A/µs,

≤ -100V, T ≤ 150°C

➀➀Repetitive Rating; Pulse width limited by

maximum junction temperature.

➀➀➀V

=-25V, starting T = 25°C, L = 266mH

Peak I = -0.75A, V

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= -10V

Case Outline and Dimensions — MO-036AB

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/02

www.irf.com

JANTXV2N7335 [INFINEON]

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