KSY10 [INFINEON]

Hall Sensor; 霍尔传感器


型号：	KSY10
厂家：	Infineon
描述：	Hall Sensor 霍尔传感器传感器
文件：	总3页 (文件大小：119K)
中文：	中文翻译
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Hall Sensor

KSY 10

Features

• High sensitivity

• High operating temperature range

• High linearity

• Low offset voltage

• Low TC of sensitivity and internal

resistance

• Plastic-encapsulated miniature

package

Typical applications

• Detection of speed

• Detection of position

• Detection of diaphragm position in

pressure pickup cans

• Magnetic field measurement at

permanent magnets

• Magnetic field measurement at

magnetic yokes for current

determination

• Magnetic field measurement in dc

motors for contactless commutation

Dimensions in mm

Type

Ordering Code

KSY 10

Q62705-K38

The position sensor KSY 10 is an ion-implanted Hall generator made of mono-crystalline

GaAs material. It is enclosed in a tubular plastic package with four tags.

When operating the sensor with a constant supply current, the output Hall voltage is

directly proportional to the magnetic field acting upon the sensor. This sensor is

outstanding for its high inductive sensitivity and very low temperature coefficient.

Semiconductor Group

07.96

KSY 10

The Hall sensor’s active area is approx. 0.2 mm × 0.2 mm. It is placed approx. 0.35 mm

below the plastic surface of the front side and is concentric towards the adjusting

marking on the rear. The chip carrier is non-magnetic.

The position sensor KSY 10 is particularly suitable for sensing the position of magnets

and of softmagnetic material, resp., if the sensor itself is mounted on a magnet.

Maximum ratings

Parameter

Symbol

T_A

Value

Unit

°C

Operating temperature

Storage temperature

Supply current

– 40 / + 150

– 50 / + 160

T_stg

°C

I₁

Thermal conductivity¹⁾

G_{th A}

≥ 2.8

mW/K

Characteristics (T_A= 25 °C)

Nominal supply current

Open-circuit sensitivity

I_1N

K_B0

V₂₀

170…230

85…130

V/AT

Open-circuit Hall voltage

I₁= I_1N, B = 0.1 T

Ohmic offset voltage²⁾

I₁= I_1N, B = 0 T

≤ ± 25

V_R0

F_L

Linearity of Hall voltage

B = 0…0.5 T

B = 0…1 T

≤ ± 0.2

≤ ± 0.7

Supply and Hall-side internal resistance

B = 0 T

R_{10, 20}

TC_V20

900…1200

Ω

Temperature coefficient of the

open-circuit Hall voltage

I₁= I_1N, B = 0.2 T

approx. –0.05 %/K

Temperature coefficient of the internal

TC_{R10, R20}

0.1 … 0.18

%/K

resistance

B = 0.2 T

1) Thermal conductivity chip-ambient when soldered, in still air

2) Offset voltage selection upon request

Semiconductor Group

KSY 10

Open-circuit sensitivity K_B0

versus temperature

referred to K_B0at T_A= 25 °C

Internal resistance R₂₀

versus temperature referred to R₂₀at

T_A= 25 °C, Parameter: Flux density B

Internal resistance R₂₀

versus magnetic field referred to R₂₀at

B = 0 T and T_A= 25 °C

Max. permissible supply current I₁

versus temperature T_A

Semiconductor Group

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