KSY16 [INFINEON]

Hall Sensor; 霍尔传感器
KSY16
型号: KSY16
厂家: Infineon    Infineon
描述:

Hall Sensor
霍尔传感器

模拟IC 传感器 信号电路 光电二极管
文件: 总2页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Hall Sensor  
KSY 16  
Features  
• Hall sensor on Cu-leadframe  
for SMT-technology, MW-6  
package  
• High sensitivity  
• High temperature range  
• Small linearity error  
• Low offset voltage  
• Low TC of sensitivity  
resistances  
• This Hall sensor combines  
the avantages of non-  
magnetic leadframe and SMT  
capability  
Approx. weight 0.02 g  
Typical applications  
• Rotation and position sensing  
• Current and power  
measurement  
Pin Configuration  
1, 4  
Hall voltage terminals  
3+, 2- Supply current terminals  
• Magnetic field measurement  
• Control of brushless DC  
motors  
Dimensions in mm  
Type  
Marking  
Ordering Code  
on request  
KSY 16  
s16  
The KSY 16 is an ion-implanted Hall sensor in a monocrystalline GaAs-material, built  
into an SMT package (MW-6). It is outstanding for a high magnetic sensitivity and low  
temperature coefficients. The 0.35 × 0.35 mm2 chip is mounted onto a non-magnetic  
leadframe. The active area is placed approx. 0.45 mm below the surface of the package.  
Semiconductor Group  
1
07.96  
KSY 16  
Maximum ratings  
Parameter  
Symbol  
TA  
Value  
Unit  
°C  
Operating temperature  
Storage temperature  
Supply current  
– 40+ 150  
– 50+ 160  
7
Tstg  
°C  
I1  
mA  
Thermal conductivity1)  
GthC  
2.2  
mW/K  
Characteristics (TA = 25 °C)  
Nominal supply current  
Open-circuit sensitivity  
I1N  
5
mA  
KB0  
V20  
190260  
95130  
V/AT  
mV  
Open-circuit Hall voltage  
I = I1N, B = 0.1 T  
Ohmic offset voltage  
I = I1N, B = 0 T  
≤ ± 20  
mV  
VR20  
Linearity of Hall voltage  
B = 00.5 T  
B = 01 T  
FL  
FL  
≤ ± 0.2  
≤ ± 0.7  
%
%
Input resistance  
B = 0 T  
B = 0 T  
R10  
9001200  
Output resistance  
R20  
9001200  
Temperature coefficient of the  
open-circuit Hall voltage  
I1 = I1N, B = 0.1 T  
TCV20  
– 0.03– 0.07  
%/K  
Temperature coefficient of the internal TCR10, R20  
resistance  
B = 0 T  
0.10.18  
2  
%/K  
mV  
Change of offset voltage within the  
temperature range2)  
VR0  
Connection of a Hall sensor with a power source  
Since the voltage on the component must not exceed 10 V, the connection to the  
constant current supply should only be done via a short circuit by-pass. The by-pass  
circuit-breaker shall not be opened before turning on the power source. This is to avoid  
damage to the Hall sensor due to power peaks.  
1) Thermal conductivity chip-ambient when mounted on alumina ceramic 15 mm × 17 mm × 0.7 mm  
2) AQL: 0.65  
Semiconductor Group  
2

相关型号:

KSY21

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | TO-18
ETC

KSY34D

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-5VAR
ETC

KSY44

Hall Sensor Preliminary Data
INFINEON

KSY46

Hall Sensor Preliminary Data
INFINEON

KSY62A

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY62B

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY63

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY71

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY72

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY81

TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18
ETC

KSY82

TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-18
ETC

KSZ8001L

1.8V, 3.3V 10/100BASETX/FX Physical Layer Transceiver
MICREL