KSY46 [INFINEON]

Hall Sensor Preliminary Data; 霍尔传感器初步数据
KSY46
型号: KSY46
厂家: Infineon    Infineon
描述:

Hall Sensor Preliminary Data
霍尔传感器初步数据

传感器
文件: 总3页 (文件大小:24K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Hall Sensor  
KSY 46  
Preliminary Data  
Features  
2.9 ±0.1  
B
A
2˚ ... 30˚  
• High sensitivity  
• Small linearity error  
• Low offset voltage  
• Low TC of sensitivity  
resistance  
1.9  
1.1 max  
0.08 ... 0.15  
+0.1  
0.6  
-0.05  
6
1
5
4
3
2
Typical Applications  
0.35 ±0.15  
0.2  
• Current and power  
measurement  
• Magnetic field measurement  
• Control of brushless DC  
motors  
0.1 max  
+0.1  
0.3  
-0.05  
M
M
0.25  
B
0.20  
A
Approx. weight 0.02 g  
Reflow soldering  
0.8  
• Rotation and position sensing  
• Measurement of diaphragm  
0.3  
Pin Configuration  
1, 4  
Hall voltage terminals  
3+, 2/5- Supply current terminals  
0.5  
0.45  
GPW06957  
Dimensions in mm  
Type  
Marking  
Ordering Code  
KSY 46  
s46  
on request  
Packing: Taped on 18 cm reel, 3K parts per reel, date code on the label.  
The KSY 46 is a MOVPE1) Hall sensor made of monocrystalline GaAs-material, built into  
a SMT package (MW-6). The sensor is outstanding for its high magnetic field sensitivity  
and its very low temperature coefficients. While the sensor is operated with constant  
current, the output Hall Voltage is directly proportional to a magnetic field acting  
prependicular to the surface of the sensor. The 0.35 × 0.35 mm2 chip is mounted onto a  
non-magnetic leadframe.  
1) Metal Organic Vapour Phase Epitaxy  
Semiconductor Group  
1
1998-11-13  
KSY 46  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
°C  
Operating temperature  
Storage temperature  
Supply current  
TA  
Tstg  
I1  
– 40 + 150  
– 50 + 160  
10  
°C  
mA  
Thermal conductivity, soldered  
in air  
GthC  
GthA  
2.2  
1.5  
mW/K  
mW/K  
Characteristics (TA = 25 °C)  
Nominal supply current  
Open-circuit sensitivity  
I1N  
7
mA  
KB0  
V20  
150 265  
105 185  
V/AT  
mV  
Open-circuit Hall voltage  
I1 = I1N, B = 0.1 T  
Ohmic offset voltage  
I1 = I1N, B = 0 T  
≤ ± 15  
mV  
VR0  
Linearity of Hall voltage  
B = 00.5 T  
B = 01.0 T  
FL  
FL  
≤ ± 0.2  
≤ ± 0.7  
%
%
Input resistance  
B = 0 T  
B = 0 T  
R10  
600 900  
1000 1500  
– 0.03  
Output resistance  
R20  
Temperature coefficient of the  
open-circuit Hall-voltage  
I1 = I1N, B = 0.1 T  
TCV20  
%/K  
Temperature coefficient of the internal TCR10, R20  
resistance  
B = 0 T  
0.3  
0.3  
%/K  
%/K  
Temperature coefficient of ohmic offset TCVR 0  
voltage  
I1 = I1N, B = 0 T  
1)  
Switch on-drift of the ohmic offset  
voltage  
dV0  
0.3  
0.1  
mV  
mV  
2)  
V0  
I1 = I1N, B = 0 T  
Noise Figure  
10  
dB  
F
1) dV0 = | V0 (t = 1 s) - V0 (t = 0.1 s) |  
2) V0 = | V0 (t = 3 m) - V (t = 1 s) |  
0
Semiconductor Group  
2
1998-11-13  
KSY 46  
Connection of a Hall Sensor with a Power Source  
Since the voltage on the component must not exceed 10 V, the connection to the  
constant current supply should only be done via a short circuit by-pass. The by-pass  
circuit-breaker shall not be opened before turning on the power source. This is to avoid  
damage to the Hall sensor due to power peaks.  
Semiconductor Group  
3
1998-11-13  

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