KSY46 [INFINEON]
Hall Sensor Preliminary Data; 霍尔传感器初步数据型号: | KSY46 |
厂家: | Infineon |
描述: | Hall Sensor Preliminary Data |
文件: | 总3页 (文件大小:24K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Hall Sensor
KSY 46
Preliminary Data
Features
2.9 ±0.1
B
A
2˚ ... 30˚
• High sensitivity
• Small linearity error
• Low offset voltage
• Low TC of sensitivity
resistance
1.9
1.1 max
0.08 ... 0.15
+0.1
0.6
-0.05
6
1
5
4
3
2
Typical Applications
0.35 ±0.15
0.2
• Current and power
measurement
• Magnetic field measurement
• Control of brushless DC
motors
0.1 max
+0.1
0.3
-0.05
M
M
0.25
B
0.20
A
Approx. weight 0.02 g
Reflow soldering
0.8
• Rotation and position sensing
• Measurement of diaphragm
0.3
Pin Configuration
1, 4
Hall voltage terminals
3+, 2/5- Supply current terminals
0.5
0.45
GPW06957
Dimensions in mm
Type
Marking
Ordering Code
KSY 46
s46
on request
Packing: Taped on 18 cm reel, 3K parts per reel, date code on the label.
The KSY 46 is a MOVPE1) Hall sensor made of monocrystalline GaAs-material, built into
a SMT package (MW-6). The sensor is outstanding for its high magnetic field sensitivity
and its very low temperature coefficients. While the sensor is operated with constant
current, the output Hall Voltage is directly proportional to a magnetic field acting
prependicular to the surface of the sensor. The 0.35 × 0.35 mm2 chip is mounted onto a
non-magnetic leadframe.
1) Metal Organic Vapour Phase Epitaxy
Semiconductor Group
1
1998-11-13
KSY 46
Maximum Ratings
Parameter
Symbol
Value
Unit
°C
Operating temperature
Storage temperature
Supply current
TA
Tstg
I1
– 40 … + 150
– 50 … + 160
10
°C
mA
Thermal conductivity, soldered
in air
GthC
GthA
≥ 2.2
≥ 1.5
mW/K
mW/K
Characteristics (TA = 25 °C)
Nominal supply current
Open-circuit sensitivity
I1N
7
mA
KB0
V20
150 … 265
105 … 185
V/AT
mV
Open-circuit Hall voltage
I1 = I1N, B = 0.1 T
Ohmic offset voltage
I1 = I1N, B = 0 T
≤ ± 15
mV
VR0
Linearity of Hall voltage
B = 0…0.5 T
B = 0…1.0 T
FL
FL
≤ ± 0.2
≤ ± 0.7
%
%
Input resistance
B = 0 T
B = 0 T
R10
600 … 900
1000 … 1500
– 0.03
Ω
Output resistance
R20
Ω
Temperature coefficient of the
open-circuit Hall-voltage
I1 = I1N, B = 0.1 T
TCV20
%/K
Temperature coefficient of the internal TCR10, R20
resistance
B = 0 T
0.3
0.3
%/K
%/K
Temperature coefficient of ohmic offset TCVR 0
voltage
I1 = I1N, B = 0 T
1)
Switch on-drift of the ohmic offset
voltage
dV0
≤ 0.3
≤ 0.1
mV
mV
2)
∆V0
I1 = I1N, B = 0 T
Noise Figure
10
dB
F
1) dV0 = | V0 (t = 1 s) - V0 (t = 0.1 s) |
2) ∆V0 = | V0 (t = 3 m) - V (t = 1 s) |
0
Semiconductor Group
2
1998-11-13
KSY 46
Connection of a Hall Sensor with a Power Source
Since the voltage on the component must not exceed 10 V, the connection to the
constant current supply should only be done via a short circuit by-pass. The by-pass
circuit-breaker shall not be opened before turning on the power source. This is to avoid
damage to the Hall sensor due to power peaks.
Semiconductor Group
3
1998-11-13
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