LD274 [INFINEON]
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter; 砷化镓红外Lumineszenzdiode的GaAs红外发射器
| 型号： | LD274 |
| 厂家： | 
Infineon |
| 描述： | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| 文件： | 总4页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
LD 274
Area not flat
9.0
0.6
0.4
8.2
5.9
5.5
7.8
7.5
1.8
1.2
0.6
0.4
5.7
5.1
29
Chip position
27
Cathode (Diode)
Collector (Transistor)
GEX06260
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
● Sehr enger Abstrahlwinkel
● GaAs-IR-LED, hergestellt im
Schmelzepitaxieverfahren
● Hohe Zuverlässigkeit
● Extremely narrow half angle
● GaAs infrared emitting diode, fabricated in a
liquid phase epitaxy process
● High reliability
● Hohe Impulsbelastbarkeit
● Gruppiert lieferbar
● High pulse handling capability
● Available in groups
● Gehäusegleich mit SFH 484
● Same package as SFH 484
Anwendungen
Applications
● IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Geräten
● IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers,
of various equipment
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
3
LD 274
Q62703-Q1031
Q62703-Q1819
Q62703-Q1820
5-mm-LED-Gehäuse (T 1 / ), graugetöntes Epoxy-
4
1
Gießharz, Anschlüsse im 2.54-mm-Raster ( / ’’),
Kathodenkennzeichnung: Kürzerer Lötspieß, flat
10
LD 274-21)
3
5 mm LED package (T 1 / ), grey colored epoxy resin
4
1
lens, solder tabs lead spacing 2.54 mm ( / ’’), cathode
marking: shorter solder lead, flat
10
LD 274-3
1)
Nur auf Anfrage lieferbar.
Available only on request.
1)
Semiconductor Group
1
1997-11-01
LD 274
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 55 ... + 100
°C
Operating and storage temperature range
Sperrschichttemperatur
Junction temperature
Tj
100
5
°C
Sperrspannung
Reverse voltage
VR
V
Durchlaßstrom
Forward current
IF
100
3
mA
A
Stoßstrom, tp = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
165
450
mW
K/W
Wärmewiderstand
Thermal resistance
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
950
nm
Spektrale Bandbreite bei 50 % von Imax
Spectral bandwidth at 50 % of Imax
IF = 100 m A, tp = 20 ms
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 10
Grad
2
Aktive Chipfläche
Active chip area
0.09
mm
A
Abmessungen der aktive Chipfläche
Dimension of the active chip area
L × B
L × W
0.3 × 0.3
mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
H
4.9 ... 5.5
1
mm
Schaltzeiten, Ie von 10 % auf 90 % und von
90 % auf 10 %, bei IF = 100 mA, RL = 50 Ω
Switching times, Ie from 10 % to 90 % and
from 90 % to 10 %, IF = 100 mA, RL = 50 Ω
tr, tf
µs
Semiconductor Group
2
1997-11-01
LD 274
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Kapazität
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.30 (≤ 1.5)
1.90 (≤ 2.5)
V
V
Sperrstrom, VR = 5 V
IR
0.01 (≤ 1)
µA
Reverse current
Gesamtstrahlungsfluß
Total radiant flux
Φe
15
mW
IF = 100 mA, tp = 20 ms
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
TCI
– 0.55
%/K
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 1.5
+ 0.3
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Grouping of radiant intensity Ie in axial direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
LD 274
LD 274-21)
LD 274-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
50
–
50
100
80
–
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ.
350
600
800
mW/sr
1)
Nur auf Anfrage lieferbar.
Available only on request.
1)
Semiconductor Group
3
1997-11-01
LD 274
I
e
= f (I )
Relative spectral emission
Radiant intensity
Max. permissible forward current
F
I 100 mA
e
I
= f (λ)
I = f (T )
rel
F
A
Single pulse, tp = 20 µs
OHR00883
OHR01938
OHR01038
10 2
120
mA
100
%
Ιe
Ι F
Ιe (100 mA)
Ι rel
100
80
60
40
20
0
80
10 1
60
40
20
RthjA = 450 K/W
10 0
10 -1
0
10 -2
10 -1
10 0
A
10 1
0
20
40
60
80
100 ˚C 120
880
920
960
1000
nm
1060
TA
λ
Ι F
Forward current
Radiation characteristics, I = f (ϕ)
rel
I = f (V ), single pulse, tp = 20 µs
F
F
40
30
20
10
0
OHR01882
OHR01041
10 1
A
1.0
Ι F
50
0.8
0.6
0.4
0.2
0
typ.
max.
10 0
10 -1
10 -2
60
70
80
90
100
1
1.5
2
2.5
3
3.5
4
V 4.5
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
VF
Permissible pulse handling capability
I = f (τ), T ≤ 25 °C,
F
C
duty cycle D = parameter
10 4
OHR00860
t p
mA
5
Ι F
t p
T
Ι F
D
=
D
0.005
0.01
=
T
0.02
0.05
10 3
5
0.1
0.2
0.5
DC
10 2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Semiconductor Group
4
1997-11-01
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