LS3336-T [INFINEON]
Hyper 3 mm T1 LED, Non Diffused Hyper-Bright LED; 超3毫米T1 LED ,不扩散超高亮LED型号: | LS3336-T |
厂家: | Infineon |
描述: | Hyper 3 mm T1 LED, Non Diffused Hyper-Bright LED |
文件: | 总7页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Hyper 3 mm (T1) LED, Non Diffused
Hyper-Bright LED
LS 3336, LA 3336, LO 3336
LY 3336
Besondere Merkmale
● nicht eingefärbtes, klares Gehäuse
● zur Einkopplung in Lichtleiter
● als optischer Indikator einsetzbar
● Lötspieße mit Aufsetzebene
● gegurtet lieferbar
● Störimpulsfest nach DIN 40839
Features
● colorless, clear package
● optical coupling into light pipes
● for use as optical indicator
● solder leads with stand-off
● available taped on reel
● load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Typ
Type
Emissionsfarbe Gehäusefarbe
Lichtstärke
Luminous
Intensity
Bestellnummer
Ordering Code
Color of
Color of
Package
Emission
IF = 20 mA
IV (mcd)
LS 3336-QT
LS 3336-R
LS 3336-S
LS 3336-T
LS 3336-RU
super-red
amber
colorless clear
colorless clear
colorless clear
colorless clear
63 ... 500
100 ... 200
160 ... 320
250 ... 500
100 ... 800
Q62703-Q3482
Q62703-Q3484
Q62703-Q3485
Q62703-Q3813
Q62703-Q3486
LA 3336-RU
LA 3336-S
LA 3336-T
LA 3336-U
LA 3336-SV
100 ... 800
160 ... 320
250 ... 500
400 ... 800
160 ... 1250
Q62703-Q3554
Q62703-Q3551
Q62703-Q3552
Q62703-Q3553
Q62703-Q3555
LO 3336-RU
LO 3336-S
LO 3336-T
LO 3336-U
LO 3336-SV
orange
yellow
100 ... 800
160 ... 320
250 ... 500
400 ... 800
160 ... 1250
Q62703-Q3144
Q62703-Q3176
Q62703-Q3170
Q62703-Q3307
Q62703-Q3177
LY 3336-RU
LY 3336-S
LY 3336-T
LY 3336-U
LY 3336-SV
100 ... 800
160 ... 320
250 ... 500
400 ... 800
160 ... 1250
Q62703-Q3487
Q62703-Q3489
Q62703-Q3490
Q62703-Q3814
Q62703-Q3491
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LA LY
Betriebstemperatur
Operating temperature range
Top
Tstg
Tj
– 55 ... + 100
˚C
˚C
˚C
mA
A
Lagertemperatur
Storage temperature range
– 55 ... + 100
+ 100
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
IF
30
1
20
Stoßstrom
IFM
0.2
Surge current
t ≤ 10 µs, D = 0.005
1)
Sperrspanung
VR
3
V
1)
Reverse voltage
Verlustleistung
Power dissipation
TA ≤ 25 ˚C
Ptot
80
55
mW
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Rth JA
500
K/W
1)
Belastung in Sperrichtung sollte vermieden werden.
1)
Reverse biasing should be avoided.
Semiconductor Group
3
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LA
LO
LY
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 20 mA
(typ.) λpeak
(typ.)
645
622
615
16
610
605
16
591
nm
nm
nm
Dominantwellenlänge
Dominant wavelength
IF = 20 mA
(typ.) λdom
(typ.)
632
16
587
15
Spektrale Bandbreite bei 50% Irel max
Spectral bandwidth at 50% Irel max
IF = 20 mA
(typ.) ∆λ
(typ.)
Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% Iv
2ϕ
50
50
50
50
Grad
deg.
Durchlaßspannung
Forward voltage
IF = 20 mA
(typ.) VF
(max.) VF
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
Reverse current
VR = 3 V
(typ.) IR
(max.) IR
0.01 0.01 0.01
10 10 10
0.01
10
µA
µA
Temperaturkoeffizient von λdom (IF = 20 mA)
Temperature coefficient of λdom (IF = 20 mA)
TC
0.014 0.062 0.067 0.096 nm/K
0.14 0.13 0.13 0.13 nm/K
λ
λ
Temperaturkoeffizient von λpeak
,
TC
IF = 20 mA
Temperature coefficient of λpeak
IF = 20 mA
(typ.)
(typ.)
,
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TC
Temperature coefficient of VF, IF = 20 mA (typ.)
– 1.95 – 1.78 – 1.67 – 2.51 mV/K
V
Semiconductor Group
4
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA
Relative spectral emission
V (λ) = spektrale Augenempfindlichkeit
Standard eye response curve
OHL00235
100
%
Ιrel
80
V
λ
60
40
20
0
yellow
orange
amber
super-red
400
450
500
550
600
650
nm
700
λ
Abstrahlcharakteristik Irel = f (ϕ)
Radiation characteristic
40
30
20
10
0
OHL01646
φ
1.0
50
0.8
0.6
0.4
0.2
0
60
70
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
5
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Durchlaßstrom I = f (VF)
Forward current
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
F
TA = 25˚C
I = f (TA)
F
OHL00232
OHL00248
10 2
mA
5
35
mA
Ι F
Ι F
30
25
10 1
5
yellow
20
15
10
5
10 0
5
10 -1
0
1.0
1.4
1.8
2.2
2.6
3.0 V 3.4
VF
0
20
40
60
80 C 100
ΤA
Relative Lichtstärke IV/IV(20 mA) = f (IF)
Relative luminous intensity
TA = 25˚C
Relative Lichtstärke IV / IV(25˚C ) = f (TA)
Relative luminous intensity
I = 20 mA
F
OHL00233
OHL00238
10 1
2.0
ΙV (25 C)
ΙV
Ι V
Ι V (20 mA)
1.6
10 0
orange
yellow
amber
5
super-red
1.2
0.8
0.4
0
10 -1
5
superred
yellow
orange/amber
orange
10 -2
5
yellow
amber
super-red
10 -3
10 -1
5
10 0
5
10 1
mA 10 2
-20
0
20
40
60
C
100
Ι F
TA
Semiconductor Group
6
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY
Duty cycle D = parameter, TA = 25 ˚C
Duty cycle D = parameter, TA = 25 ˚C
OHL00322
OHL00316
10 1
10 0
tp
A
tp
A
tp
Ι F
Ι F
5
Ι F
tp
D =
Ι F
D =
T
5
T
T
T
D =
D =
0.005
0.01
0.02
0.05
0.1
10 0
5
0.005
0.01
0.02
0.05
0.1
0.2
10 -1
0.2
0.5
10 -1
5
5
0.5
10 -2
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Maßzeichnung
Package Outlines
(Maße in mm, wenn nicht anders angegeben)
(Dimensions in mm, unless otherwise specified)
Area not flat
4.8
4.4
3.4
3.1
3.7
3.5
6.1
5.7
0.6
0.4
1.8
1.2
29.0
27.0
Cathode
Approx. weight 0.15 g
Cathode
GEX06951
Kathodenkennzeichnung:
Cathode mark:
Kürzerer Lötspieß
Short solder lead
Semiconductor Group
7
1998-09-18
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