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LS3386-MQ [INFINEON]

Hyper 3 mm T1 LED, Diffused Hyper-Bright, Wide-Angle LED; 超3毫米T1 LED，扩散超明亮，广角LED
LS3386-MQ
型号： LS3386-MQ
厂家： Infineon    Infineon
描述：

Hyper 3 mm T1 LED, Diffused Hyper-Bright, Wide-Angle LED
超3毫米T1 LED，扩散超明亮，广角LED
文件： 总7页 (文件大小：55K)
中文：  中文翻译
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Hyper 3 mm (T1) LED, Diffused  
Hyper-Bright, Wide-Angle LED  
LS 3386, LA 3386, LO 3386  
LY 3386  
Besondere Merkmale  
● eingefärbtes, diffuses Gehäuse  
● zur Einkopplung in Lichtleiter  
● als optischer Indikator einsetzbar  
● Lötspieße mit Aufsetzebene  
● gegurtet lieferbar  
● Störimpulsfest nach DIN 40839  
Features  
● colored, diffused package  
● optical coupling into light pipes  
● for use as optical indicator  
● solder leads with stand-off  
● available taped on reel  
● load dump resistant acc. to DIN 40839  
Semiconductor Group  
1
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Typ  
Type  
Emissionsfarbe Gehäusefarbe  
Lichtstärke  
Luminous  
Intensity  
Bestellnummer  
Ordering Code  
Color of  
Color of  
Package  
Emission  
IF = 20 mA  
IV (mcd)  
LS 3386-LP  
LS 3386-M  
LS 3386-N  
LS 3386-P  
LS 3386-MQ  
super-red  
amber  
red diffused  
10 ...  
16 ...  
25 ...  
40 …  
80  
32  
50  
80  
Q62703-Q3579  
Q62703-Q3581  
Q62703-Q3582  
Q62703-Q3709  
Q62703-Q3580  
16 … 125  
LA 3386-MQ  
LA 3386-N  
LA 3386-P  
LA 3386-Q  
LA 3386-NR  
orange diffused  
orange diffused  
yellow diffused  
16 … 125  
25 …  
40 …  
63 … 125  
25 … 200  
Q62703-Q3886  
Q62703-Q3887  
Q62703-Q3888  
Q62703-Q3889  
Q62703-Q3890  
50  
80  
LO 3386-MQ  
LO 3386-N  
LO 3386-P  
LO 3386-Q  
LO 3386-NR  
orange  
yellow  
16 … 125  
25 …  
40 …  
63 … 125  
25 … 200  
Q62703-Q3891  
Q62703-Q3892  
Q62703-Q3893  
Q62703-Q3894  
Q62703-Q3895  
50  
80  
LY 3386-MQ  
LY 3386-N  
LY 3386-P  
LY 3386-Q  
LY 3386-NR  
16 … 125  
25 …  
40 …  
63 … 125  
25 … 200  
Q62703-Q3896  
Q62703-Q3897  
Q62703-Q3898  
Q62703-Q3899  
Q62703-Q3900  
50  
80  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.  
Semiconductor Group  
2
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS, LO, LA LY  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 55... + 100  
˚C  
˚C  
˚C  
mA  
A
Lagertemperatur  
Storage temperature range  
– 55... + 100  
+ 100  
Sperrschichttemperatur  
Junction temperature  
Durchlaßstrom  
Forward current  
IF  
30  
1
20  
Stoßstrom  
IFM  
0.2  
Surge current  
t ≤ 10 µs, D = 0.005  
1)  
Sperrspanung  
VR  
3
V
1)  
Reverse voltage  
Verlustleistung  
Power dissipation  
TA ≤ 25 ˚C  
Ptot  
80  
55  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Umgebung  
Junction / air  
Rth JA  
500  
K/W  
1)  
Belastung in Sperrichtung sollte vermieden werden.  
1)  
Reverse biasing should be avoided.  
Semiconductor Group  
3
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LA  
LO  
LY  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 20 mA  
(typ.) λpeak  
(typ.)  
645  
622  
615  
16  
610  
605  
16  
591  
nm  
nm  
nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.) λdom  
(typ.)  
632  
16  
587  
15  
Spektrale Bandbreite bei 50% Irel max  
Spectral bandwidth at 50% Irel max  
IF = 20 mA  
(typ.) ∆λ  
(typ.)  
Abstrahlwinkel bei 50% Iv (Vollwinkel)  
Viewing angle at 50% Iv  
2ϕ  
100  
100  
100  
100  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 20 mA  
(typ.) VF  
(max.) VF  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
2.0  
2.6  
V
V
Sperrstrom  
Reverse current  
VR = 3 V  
(typ.) IR  
(max.) IR  
0.01 0.01 0.01  
10 10 10  
0.01  
10  
µA  
µA  
Temperaturkoeffizient von λdom (IF = 20 mA)  
Temperature coefficient of λdom (IF = 20 mA)  
TC  
0.014 0.062 0.067 0.096 nm/K  
0.14 0.13 0.13 0.13 nm/K  
λ
λ
Temperaturkoeffizient von λpeak  
,
TC  
IF = 20 mA  
Temperature coefficient of λpeak  
IF = 20 mA  
(typ.)  
(typ.)  
,
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TC  
Temperature coefficient of VF, IF = 20 mA (typ.)  
– 1.95 – 1.78 – 1.67 – 2.51 mV/K  
V
Semiconductor Group  
4
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL00235  
100  
%
Ιrel  
80  
60  
40  
20  
0
V
λ
yellow  
orange  
amber  
super-red  
400  
450  
500  
550  
600  
650  
nm  
700  
λ
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
40  
30  
20  
10  
0
OHL01681  
φ
1.0  
50  
0.8  
0.6  
0.4  
0.2  
0
60  
70  
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Semiconductor Group  
5
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Durchlaßstrom I = f (VF)  
Forward current  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
F
TA = 25˚C  
I = f (TA)  
F
OHL00232  
OHL00248  
10 2  
mA  
5
35  
mA  
Ι F  
Ι F  
30  
25  
10 1  
5
yellow  
20  
15  
10  
5
10 0  
5
10 -1  
0
1.0  
1.4  
1.8  
2.2  
2.6  
3.0 V 3.4  
VF  
0
20  
40  
60  
80 C 100  
ΤA  
Relative Lichtstärke IV/IV(20 mA) = f (IF)  
Relative luminous intensity  
TA = 25˚C  
Relative Lichtstärke IV / IV(25˚C ) = f (TA)  
Relative luminous intensity  
I = 20 mA  
F
OHL00233  
OHL00238  
10 1  
2.0  
ΙV (25 C)  
ΙV  
Ι V  
Ι V (20 mA)  
1.6  
orange  
yellow  
10 0  
amber  
5
super-red  
1.2  
0.8  
0.4  
0
10 -1  
5
superred  
yellow  
orange/amber  
orange  
10 -2  
5
yellow  
amber  
super-red  
10 -3  
10 -1  
5
10 0  
5
10 1  
mA 10 2  
-20  
0
20  
40  
60  
C
100  
Ι F  
TA  
Semiconductor Group  
6
1998-09-18  
LS 3386, LA 3386, LO 3386, LY 3386  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible pulse handling capability  
LS, LA, LO  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible pulse handling capability  
LY  
Duty cycle D = parameter, TA = 25 ˚C  
Duty cycle D = parameter, TA = 25 ˚C  
OHL00322  
10 1  
OHL00316  
10 0  
tp  
A
tp  
A
tp  
Ι F  
Ι F  
5
Ι F  
tp  
D =  
Ι F  
T
D =  
5
T
T
T
D =  
D =  
0.005  
0.01  
0.02  
0.05  
0.1  
10 0  
5
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
10 -1  
0.2  
0.5  
10 -1  
5
5
0.5  
10 -2  
10 -2  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2  
tp  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2  
tp  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
4.8  
Area not flat  
4.4  
2.7  
2.1  
3.4  
3.1  
1.8  
1.2  
3.7  
3.5  
0.6  
0.4  
29.0  
27.0  
6.1  
5.7  
Chip position  
Collector/  
Cathode  
GEX06710  
Kathodenkennzeichnung:  
Cathode mark:  
Kürzerer Lötspieß  
Short solder lead  
Semiconductor Group  
7
1998-09-18  

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