MMBTA13 [INFINEON]
NPN Silicon Darlington Transistors; NPN硅达林顿晶体管
| 型号： | MMBTA13 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistors |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
NPN Silicon Darlington Transistors
3
High DC current gain
High collector current
Low collector-emitter saturation voltage
2
1
VPS05161
Type
Marking
s1M
s1N
Pin Configuration
Package
SOT23
SOT23
1 = B
1 = B
2 = E
3 = C
SMBTA13/ MMBTA13
SMBTA14/ MMBTA14
2 = E
3 = C
Maximum Ratings
Parameter
Symbol
Values
30
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
CES
CBO
EBO
30
10
300
500
mA
mA
I
C
I
CM
100
I
B
Peak base current
200
I
BM
330
150
mW
°C
Total power dissipation, T = 81 °C
Junction temperature
P
tot
S
T
j
Storage temperature
-65 ... 150
T
stg
Thermal Resistance
Junction - soldering point
1)
R
210
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Feb-18-2002
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Electrical Characteristics at T = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
30
30
10
-
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
-
-
-
-
-
-
-
-
-
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
I = 10 µA, V = 0
C
BE
Collector-base breakdown voltage
I = 10 µA, I = 0
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
Collector cutoff current
100 nA
10 µA
I
CBO
V
= 30 V, I = 0
CB
E
Collector cutoff current
= 30 V, I = 0 , T = 150 °C
-
I
CBO
V
CB
E
A
Emitter cutoff current
= 10 V, I = 0
-
100 nA
I
EBO
V
EB
C
DC current gain 1)
I = 10 mA, V = 5 V
-
h
FE
5000
10000
10000
20000
-
-
-
-
-
-
-
-
SMBTA13
SMBTA14
SMBTA13
SMBTA14
C
CE
I = 100 mA, V = 5 V
C
CE
Collector-emitter saturation voltage1)
-
-
1.5
V
V
CEsat
BEsat
I = 100 mA, I = 0.1 mA
C
B
Base-emitter saturation voltage 1)
-
-
2
V
I = 100 mA, I = 0.1 mA
C
B
AC Characteristics
Transition frequency
125
-
-
MHz
f
T
I = 50 mA, V = 5 V, f = 20 MHz
C
CE
1) Pulse test: t ≤ 300µs, D = 2%
2
Feb-18-2002
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Total power dissipation P = f(T )
Collector-base capacitance C = f (V
CBO
tot
S
CB
Emitter-base capacitance C = f (V
)
EB
EBO
SMBTA 13/14
EHP00823
10
pF
360
mW
CCB0
CEB0
(
)
300
270
240
210
180
150
120
90
CCB0
5
CEB0
60
30
0
10-1
0
100
101
VEB0
0
15 30 45 60 75 90 105 120
150
°C
S
V
T
VCB0
,
(
)
Permissible pulse load
/ P = f (t )
Transition frequency f = f (I )
T
C
P
V
= 5V, f = 20MHz
totmax
totDC
p
CE
SMBTA 13/14
EHP00824
SMBTA 13/14
EHP00825
103
5
103
MHz
Ptotmax
PtotDC
t p
t p
T
fT
D
=
5
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
102
0.2
0.5
101
5
5
101
100
100
5 101
5 102
mA 103
10-6 10-5 10-4 10-3 10-2
s
100
t p
Ι C
3
Feb-18-2002
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Collector-emitter saturation voltage
I = f (V ), h = 1000
Base-emitter saturation voltage
I = f (V
), h = 1000
C
CEsat
FE
C
BEsat
FE
SMBTA 13/14
EHP00826
SMBTA 13/14
EHP00827
103
mA
103
mA
Ι C
Ι C
150 ˚C
25 ˚C
-50 ˚C
150 ˚C
25 ˚C
-50 ˚C
102
102
5
5
101
101
5
5
100
100
0
0.5
1.0
1.5
0
1.0
2.0
3.0
V
V
VCEsat
VBEsat
Collector cutoff current I
= f (T )
DC current gain h = f (I )
CBO
A
FE
C
V
= 30V
V
= 5V
CB
CE
SMBTA 13/14
EHP00828
SMBTA 13/14
EHP00829
106
104
nA
5
hFE
Ι CB0
max
103
5
125 ˚C
25 ˚C
105
5
typ
102
5
-55 ˚C
104
5
101
5
100
103
10-1
100
101
102 mA 103
0
50
100
150
˚C
TA
Ι C
4
Feb-18-2002
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