MURB1620CT-1 [INFINEON]
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA, TO-262, 3 PIN;
| 型号： | MURB1620CT-1 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA, TO-262, 3 PIN 超快恢复二极管 快速恢复二极管 |
| 文件： | 总8页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20718 rev. C 12/03
MUR1620CT
MURB1620CT
MURB1620CT-1
Ultrafast Rectifier
Features
trr = 25ns
IF(AV) = 16Amp
VR = 200V
•
•
•
•
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°COperatingJunction Temperature
Description/Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-
wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max
Units
VRRM
IF(AV)
Peak Repetitive Peak Reverse Voltage
AverageRectifiedForwardCurrent
Total Device, (Rated VR ), TC = 150°C
Non Repetitive Peak Surge Current
PeakRepetitiveForwardCurrent
200
8.0
16
100
16
V
A
PerLeg
Total Device
PerLeg
IFSM
IFM
PerLeg
(Rated VR , Square wave, 20 KHz), TC = 150°C
TJ, TSTG OperatingJunctionandStorageTemperatures
-65 to 175
°C
Case Styles
MURB1620CT
MUR1620CT
MURB1620CT-1
D2PAK
TO-262
TO-220AB
1
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MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
VF
BreakdownVoltage,
Blocking Voltage
200
-
-
V
IR = 100µA
ForwardVoltage
-
-
-
-
-
-
-
-
0.975
V
IF = 8A
0.895
V
IF = 8A, TJ = 150°C
IR
ReverseLeakageCurrent
-
5
250
-
µA
µA
pF
nH
VR = VR Rated
-
TJ = 150°C, VR = VR Rated
VR = 200V
CT
LS
JunctionCapacitance
SeriesInductance
25
8.0
-
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
trr
ReverseRecoveryTime
-
-
-
-
35
25
-
ns
IF = 1.0A, diF/dt = 50A/µs, VR = 30V
IF = 0.5A, IR = 1.0A, IREC = 0.25A
-
20
34
1.7
4.2
23
75
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 8A
VR = 160V
diF /dt = 200A/µs
IRRM
PeakRecoveryCurrent
-
-
-
-
-
-
-
-
A
Qrr
ReverseRecoveryCharge
nC
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
TJ
Max.JunctionTemperatureRange
-
-
- 65 to 175
°C
TStg
Max.StorageTemperatureRange
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
-
-
- 65 to 175
RthJC
RthJA
RthCS
Wt
PerLeg
PerLeg
-
-
-
-
3.0
50
-
°C/W
c
-
0.5
2.0
0.07
-
-
-
g
-
-
(oz)
MountingTorque
6.0
5.0
12
10
Kg-cm
lbf.in
-
c
Mounting Surface, Flat, Smooth and Greased
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2
MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
100
10
1
100
T
= 175˚C
150˚C
J
10
1
125˚C
100˚C
25˚C
0.1
0.01
0.001
T
= 175˚C
= 150˚C
J
0
50
100
150
200
250
T
J
ReverseVoltage-VR(V)
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
T
= 25˚C
J
1000
100
10
T
= 25˚C
J
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
1
10
100
1000
ForwardVoltageDrop-VFM(V)
ReverseVoltage-VR(V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
Fig.1-Typical Forward Voltage Drop Characteristics
10
D = 0.50
D = 0.20
D = 0.10
1
P
D = 0.05
D = 0.02
D = 0.01
DM
t
1
t
0.1
2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/t 2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
0.001
0.01
0.1
1
3
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MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
180
170
10
8
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
160
6
150
4
Square wave (D = 0.50)
Rated Vr applied
RMS Limit
DC
140
2
see note (2)
130
0
0
3
6
9
12
0
3
6
9
12
AverageForwardCurrent-IF(AV)(A)
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig.6-Forward Power Loss Characteristics
200
60
50
40
30
20
10
I
I
I
F
F
F
= 30 A
= 15 A
= 8 A
VR = 160V
TJ = 125˚C
TJ
= 25˚C
160
120
80
I
I
I
F
F
F
= 30 A
= 15 A
= 8 A
40
VR = 160V
TJ = 125˚C
TJ
= 25˚C
0
100
1000
100
1000
diF/dt (A/µs)
di F /dt (A/µs)
Fig.8-TypicalStoredCharge vs.diF /dt
Fig.7-TypicalReverseRecovery vs.di F /dt
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
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4
MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
di /dt
dif/dt
F
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75
I
RRM
1
di /dt
di F/dt
1. di /dt - Rate of change of current through zero
F
4. Qrr - Area under curve defined by t
rr
crossing
and I
RRM
t
x I
RRM
rr
Q
=
2. I
- Peak reverse recovery current
rr
RRM
2
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
(rec) M
current during t portion of t
rr
rr
crossing point of negative going I to point where
F
b
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
Outline Table
10.54 (0.41)
MAX.
BASE
1.32 (0.05)
1.22 (0.05)
COMMON
3.78 (0.15)
3.54 (0.14)
CATHODE
DIA.
2
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1
2
3
2°
3
2
1
ANODE COMMON
CATHODE
ANODE
2
1
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1
2 3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
Conforms to JEDEC Outline TO-220AB
Dimensions in millimeters and (inches)
Modified JEDEC outline TO-262
Dimensions in millimeters and (inches)
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6
MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
Outline Table
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
BASE
COMMON
CATHODE
1.32 (0.05)
1.22 (0.05)
2
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
2.61 (0.10)
2.32 (0.09)
1
2
3
4.78 (0.19)
0.55 (0.02)
0.46 (0.02)
ANODE COMMON
ANODE
2
CATHODE
1
8.89 (0.35)
REF.
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
0.69 (0.27)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
1
3
4.57 (0.18)
8.89 (0.35)
4.32 (0.17)
17.78 (0.70)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
2X
Conforms to JEDEC Outline D 2PAK
2.54 (0.10)
2X
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
MUR
B
16 20 CT -1
5
1
2
4
3
6
1
2
-
-
Ultrafast MUR Series
= D2Pak / TO-262
B
None = TO-220AB
3
4
5
6
-
-
-
-
Current Rating (16 = 16A)
VoltageRating (20 = 200V)
CT
=CenterTap(Dual)TO-220/D2PAK/TO-262
"-1" =TO-262Option
7
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MUR1620CT, MURB1620CT, MURB1620CT-1
Bulletin PD-20718 rev. C 12/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/03
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8
相关型号：
MURB1620CT-13-F
Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, D2PAK-3
DIODES
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