MURB1620CT-TP [MCC]

Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, D2PAK-3;


型号：	MURB1620CT-TP
厂家：	Micro Commercial Components
描述：	Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, D2PAK-3
文件：	总3页 (文件大小：140K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ꢀ

MURB1605CT

THRU

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

Micro Commercial Components

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MURB1660CT

16 Amp

Super Fast

Recovery Rectifier

50 to 600 Volts

Features

High Current Capability

Low Reverse Leakage

Low Forward Voltage Drop

High Current Capability

Super Fast Switching Speed For High Efficiency

D²-PACK

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

MURB1605CT

MURB1610CT

MURB1620CT

MURB1640CT

MURB1660CT

35V

70V

100V

200V

400V

600V

100V

140V

280V

420V

200V

400V

600V

Electrical Characteristics @ 25°C Unless Otherwise Specified

2 , 4

HEATSINK

Average Forward

Current

I_F(AV)

16 A

T_A= 90°C

Peak Forward Surge

Current

Maximum Forward

Voltage Drop Per

I_FSM

125A

8.3ms, half sine

DIMENSIONS

INCHES

DIM

NOTE

MIN

.320

.380

.160

.020

.045

.095

.096

.014

.090

.575

.045

MAX

MIN

8.13

9.65

4.06

0.51

1.14

2.41

2.43

0.35

2.29

14.60

1.14

MAX

9.14

10.45

4.83

0.89

1.40

2.67

3.03

0.53

2.79

15.80

1.40

.359

.411

.190

.035

.055

.105

.120

.021

.110

.625

.055

V_F

I_FM= 8 A per

element;

Element

1605CT-1620

0.95V

1.30V T_A= 25°C*

1.50V

1640CT

1660CT

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

10.0mA

300uA

T_C= 25°C

T_C= 100°C

SUGGESTED SOLDER PAD LAYOUT

.740

18.79

Maximum Reverse

Recovery Time

T_rr

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

.065

1.65

35ns

50ns

Inches

1605CT-1620CT

1640CT-1660CT

.420

10.66

.⁰⁷⁰

1.78

.120

3.05

Typical Thermal

Resistance

Rth-jc

°C/W

3.0

Typical Resistance

Junction to CASE

.330

8.38

*Pulse Test: Pulse Width 300msec, Duty Cycle 1%

www.mccsemi.com

Revision: 3

2003/04/30

MBRB1605CT thru MBRB1660CT

Figure 1

Typical Forward Characteristics

M C C

Figure 1

Typical Forward Characteristics

Micro Commercial Components

200

Figure 2

Forward Derating Curve

100

25°C

Amps

1605CT - 20CT

40CT - 60CT

Single Phase, Half Wave

60Hz Resistive or Inductive Load

°C

110

130

150

Average Forward Rectified Current - Amperesversus

Ambient Temperature -°C

1.4

1.0

1.2

Volts

Instantaneous Forward Current - Amperesversus

Instantaneous Forward Voltage - Volts

Figure 3

Junction Capacitance

100

T_J=25°C

400

1000

10 20

200

100

Volts

Junction Capacitance - pFversus

Reverse Voltage - Volts

www.mccsemi.com

Revision: 3

2003/04/30

M C C

MURB1605CT thru MURB1660CT

Figure 4

Typical Reverse Characteristics

Micro Commercial Components

100

Figure 5

Maximum Non-Repetitive Forward Surge Current

150

125

T_A=150°C

100

Amps

T_A=100°C

mAmps

100

8 10 20

Cycles

Peak Forward Surge Current - Amperesversus

T_A=25°C

Number Of Cycles At 60Hz - Cycles

.06

.04

.02

.01

140

100

120

Volts

Instantaneous Reverse Leakage Current - MicroAmperesversus

Percent Of Rated Peak Reverse Voltage - Volts

Figure 6

Reverse Recovery Time Characteristic And Test Circuit Diagram

50W 10W

t_rr

+0.5A

Pulse

Generator

Note 2

-0.25

25Vdc

Oscilloscope

Note 1

-1.0

1cm

Notes:

1. Rise Time = 7ns max.

Set Time Base for 20/100ns/cm

Input impedance = 1 megohm, 22pF

2. Rise Time = 10ns max.

Source impedance = 50 ohms

3. Resistors are non-inductive

www.mccsemi.com

Version: 3

2003/01/16

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