OBTS149 [INFINEON]
Smart Lowside Power Switch; 智能低压侧电源开关
| 型号： | OBTS149 |
| 厂家： | 
Infineon |
| 描述： | Smart Lowside Power Switch |
| 文件： | 总10页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HITFET BTS 149
Smart Lowside Power Switch
Features
Product Summary
Drain source voltage
On-state resistance
Current limit
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
V
60
18
30
19
V
DS
R
mΩ
A
DS(on)
I
D(lim)
Nominal load current
Clamping energy
A
I
D(ISO)
6000 mJ
E
AS
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
V
bb
+
LOAD
M
Drain
2
Overvoltage
protection
Current
dv/dt
1
limitation
lim itation
IN
Over-
temperature
protection
Overload
protection
Short circuit
ESD
protection
3
Source
HITFET
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13.07.1998
Semiconductor Group
BTS 149
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
60
Unit
Drain source voltage
V
V
V
DS
32
DS(SC)
Drain source voltage for short circuit protection
1)
Continuous input current
mA
I
IN
-0.2V ≤ V ≤ 10V
no limit
IN
V
IN
< -0.2V or V > 10V
| I | ≤ 2
IN
IN
Operating temperature
Storage temperature
Power dissipation
T
- 40 ... +150
- 55 ... +150
178
°C
W
mJ
V
j
T
stg
P
tot
T = 25 °C
C
Unclamped single pulse inductive energy
6000
3000
E
V
AS
I
= 19 A
D(ISO)
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
2)
ESD
Load dump protection V
= V + V
V
LoadDump
A
S
LD
V =low or high; V =13.5 V
IN
A
110
92
td = 400 ms, R = 2 Ω, I =0,5*19A
I
D
td = 400 ms, R = 2 Ω, I = 19A
I
D
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
E
40/150/56
Thermal resistance
junction - case:
R
R
R
0.7
75
45
K/W
thJC
thJA
thJA
junction - ambient:
3)
SMD version, device on PCB:
1
A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
3
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
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Semiconductor Group
BTS 149
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Drain source clamp voltage
60
-
-
73
25
V
V
DS(AZ)
T = - 40 ...+ 150°C, I = 10 mA
j
D
Off state drain current
= 32 V, T = -40...+150 °C, V = 0 V
-
1.3
-
µA
V
I
DSS
V
DS
j
IN
Input threshold voltage
I = 3,9 mA
1.7
-
2.2
V
IN(th)
D
100 µA
Input current - normal operation, I <I
:
IIN(1)
D
D(lim)
V
= 10 V
IN
-
400 1000
Input current - current limitation mode, I =I
: I
D
D(lim)
IN(2)
IN(3)
IN(H)
V
= 10 V
IN
1500 3000 6000
Input current - after thermal shutdown, I =0 A:
I
I
D
V
= 10 V
IN
Input holding current after thermal shutdown
T = 25 °C
500
300
-
-
-
-
j
T = 150 °C
j
On-state resistance
R
mΩ
mΩ
A
DS(on)
I = 19 A, V = 5 V, T = 25 °C
-
-
18
30
22
44
D
IN
j
I = 19 A, V = 5 V, T = 150 °C
D
IN
j
On-state resistance
I = 19 A, V = 10 V, T = 25 °C
R
DS(on)
-
-
14
25
18
36
D
IN
j
I = 19 A, V = 10 V, T = 150 °C
D
IN
j
Nominal load current (ISO 10483)
= 10 V, V = 0.5 V, T = 85 °C
19
I
D(ISO)
V
IN
DS
C
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Semiconductor Group
BTS 149
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Initial peak short circuit current limit
-
130
40
-
A
I
D(SCp)
V
= 10 V, V = 12 V
IN
DS
1)
Current limit
30
55
I
D(lim)
V
= 10 V, V = 12 V, t = 350 µs,
DS m
IN
T = -40...+150 °C
j
Dynamic Characteristics
Turn-on time to 90% I :
R = 1 Ω, V = 0 to 10 V, V = 12 V
-
-
-
-
40
70
1
100 µs
170
V
t
on
IN
D
L
IN
bb
Turn-off time
V
to 10% I :
t
off
IN
D
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
-dV /dt
3
3
V/µs
Slew rate on
70 to 50% V :
DS on
bb
R = 1 Ω, V = 0 to 10 V, V = 12 V
L
IN
bb
dV /dt
1
Slew rate off
50 to 70% V :
DS off
bb
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
Protection Functions
Thermal overload trip temperature
150
165
-
°C
T
jt
Unclamped single pulse inductive energy
mJ
E
AS
SD
I = 19 A, T = 25 °C, V = 32 V
6000
1800
-
-
-
-
D
j
bb
I = 19 A, T = 150 °C, V = 32 V
D
j
bb
Inverse Diode
Inverse diode forward voltage
-
1.1
-
V
V
I = 5*19A, t = 300 µs, V = 0 V
F
m
IN
1
Device switched on into existing short circuit (see diagram Determination of I
. Dependant on the application, these values
D(lim)
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
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Semiconductor Group
BTS 149
Block Diagramm
Terms
Inductive and overvoltage output clamp
R
D
V
L
Z
2
I
I
IN
D
IN
1
V
V
D
S
bb
DS
HITFET
3
HITFET
S
V
IN
Short circuit behaviour
Input circuit (ESD protection)
V
IN
I
D(SCp)
IN
I
D(Lim)
I
D
ESD-ZD
I
Source
t 2
t 0
tm
t 1
ESD zener diodes are not designed
for DC current > 2 mA @ V >10V.
IN
t :
Turn on into a short circuit
Measurementpoint for I
0
t :
m
D(lim)
t :
1
Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
Thermal shutdown caused by the second
t :
2
temperature sensor, achieved by an
integrating measurement.
Page 5
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Semiconductor Group
BTS 149
On-state resistance
= f(T ); I =19A; V =10V
Maximum allowable power dissipation
R
ON
j
D
IN
P
= f(T )
tot
c
BTS 149
40
170
W
mΩ
140
DS(on)
R
P
tot
120
100
80
60
40
20
0
25
20
15
10
5
max.
typ.
0
°C
-50 -25
0
25
50
75
100
150
°C
0
20
40
60
80
100 120
150
T
j
150
On-state resistance
Typ. input threshold voltage
R
= f(T ); I = 19A; V =5V
j D IN
V
= f(T ); I =3,9A; V =12V
ON
IN(th)
j
D
DS
45
2.0
V
mΩ
1.6
35
R
V
DS(on)
IN(th)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
max.
25
20
15
10
5
typ.
0
°C
-50 -25
0
25
50
75
100
150
°C
-50 -25
0
25
50
75
100
150
T
j
T
j
Page 6
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Semiconductor Group
BTS 149
Typ. transfer characteristics
I = f(V ); V =12V; T =25°C
Typ. output characteristic
I = f(V ); T =25°C
D
IN
DS
j
D
DS
j
Parameter: V
IN
40
40
A
10V
6V
5V
A
30
25
20
15
10
5
I
I
D
D
4V
20
10
0
Vin=3V
0
°C
V
0
1
2
3
4
5
6
8
0
1
2
3
5
T
j
V
DS
Transient thermal impedance
= f(t )
Z
thJC
P
Parameter: D=t /T
P
10 0
K/W
D=0.5
0.2
0 -1
Z
thJC
0.1
0.05
0.02
10 -2
0.01
0.005
10 -3
0
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 2
s
t
P
Page 7
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Semiconductor Group
BTS 149
Application examples:
Status signal of thermal shutdown by
monitoring input current
R
St
D
IN
HITFET
V
V
µC
IN
bb
S
V
∆
V
IN
thermal shutdown
∆V = R *I
ST IN(3)
Page 8
13.07.1998
Semiconductor Group
BTS 149
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6503-A3
Ordering Code: Q67060-S6503-A2
Page 9
13.07.1998
Semiconductor Group
BTS 149
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
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not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
2
systems with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
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Page 10
13.07.1998
Semiconductor Group
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