OM6005SCV [INFINEON]
Power Field-Effect Transistor, 35A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN;型号: | OM6005SCV |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 35A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总4页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
OM6005SC OM6007SC OM6105SC OM6107SC
OM6006SC OM6008SC OM6106SC OM6108SC
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Bi-Lateral Zener Gate Protection (Optional)
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
PART NUMBER
VDS
RDS(on)
.065
.095
0.3
ID
OM6005SC/OM6105SC
OM6006SC/OM6106SC
OM6007SC/OM6107SC
OM6008SC/OM6108SC
100 V
200 V
400 V
500 V
35 A
30 A
15 A
13 A
3.1
0.4
Note: OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6005SC - 6008SC
WITH ZENER CLAMPS
OM6105SC - 6108SC
1 - DRAIN
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R5
Supersedes 1 07 R4
3.1 - 75
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V)
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6106SC/OM6006SC (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
100
2.0
V
V
200
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6105)
Gate-Body Leakage (OM6005)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6106)
Gate-Body Leakage (OM6006)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
35
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
30
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
1.1 1.3
0.55 0.65
.09 0.11
V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A
1.36 1.52
.085 .095
0.14 0.17
V
VGS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 20 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
9.0
10
2700
1300
470
28
S(W ) VDS 2 VDS(on), ID = 20 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
10.0 12.5
2400
600
250
25
S(W ) VDS 2 VDS(on), ID = 16 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 30 V, ID @ 20 A
ns Rg = 5.0 W , VG = 10V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 75 V, ID @ 16 A
ns Rg = 5.0 W ,VGS = 10V
ns
45
60
td(off)
tf
Turn-Off Delay Time
Fall Time
100
50
td(off)
tf
Turn-Off Delay Time
Fall Time
85
ns
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 40
A
- 30
A
(Body Diode)
symbol showing
(Body Diode)
G
G
ISM
Source Current1
the integral P-N
ISM
Source Current1
the integral P-N
- 160
- 2.5
A
V
- 120
- 2
A
V
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
TC = 25 C, IS = -40 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
trr
TC = 25 C, IS = -30 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
400
ns
Reverse Recovery Time
350
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6107SC/OM6007SC (400V)
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6108SC/OM6008SC (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
400
2.0
V
V
500
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6107)
Gate-Body Leakage (OM6007)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6108)
Gate-Body Leakage (OM6008)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
15
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
13
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
2.0 2.4
0.25 0.3
0.50 0.60
V
VGS = 10 V, ID = 8.0 A
VGS = 10 V, ID = 8.0 A
2.1
0.3
2.8
0.4
V
VGS = 10 V, ID = 7.0 A
VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 8.0 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 7.0 A,
TC = 125 C
0.66 0.88
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0
9.6
2900
450
150
30
S(W ) VDS 2 VDS(on), ID = 8.0 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
5.0 7.2
2600
280
40
S(W ) VDS 2 VDS(on), ID = 7.0 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 200 V, ID @ 8.0 A
ns Rg =5.0 W , VGS =10V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 210 V, ID @ 7.0 A
ns Rg = 5.0 W , VGS = 10 V
ns
30
40
46
td(off)
tf
Turn-Off Delay Time
Fall Time
80
td(off)
tf
Turn-Off Delay Time
Fall Time
75
30
ns
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 15
A
- 13
A
(Body Diode)
symbol showing
(Body Diode)
G
G
ISM
Source Current1
the integral P-N
ISM
Source Current1
the integral P-N
- 60
A
V
- 52
A
V
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
- 1.6
TC = 25 C, IS = -15 A, VGS = 0
TJ = 100 C, IF = IS,
VSD
trr
- 1.4
TC = 25 C, IS = -13 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
600
ns
Reverse Recovery Time
700
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM6005SC - OM6108SC
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
OM6005SC OM6006SC OM6007SC OM6008SC
OM6105SC OM6106SC OM6107SC OM6108SC
Parameter
Units
VDS
Drain-Source Voltage
100
100
±35
± 25
±160
125
50
200
200
±30
±19
±120
125
50
400
400
±15
±9
500
500
±13
±8
V
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
ID @ TC = 25°C
ID @ TC = 100°C
ID
A
A
±60
125
50
±52
125
50
A
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
Junction To Ambient
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor1
Linear Derating Factor
W
W
1.0
1.0
1.0
1.0
W/°C
W/°C
.025
.025
.025
.025
Operating and
Tstg
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 35 Amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC
RthJA
Junction-to-Case
1.0
40
°C/W
Junction-to-Ambient
°C/W Free Air Operation
MECHANICAL OUTLINE
WITH PIN CONNECTION
POWER DERATING
.270
.240
.695
.685
.165
.155
.045
.035
.835
.815
.707
.550
.530
3.1
.697
1
2
3
.092 MAX.
.005
.750
.500
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.065
.055
.200 TYP.
.140 TYP.
PACKAGE OPTIONS
6 PIN SIP
MOD PAK
Z-TAB
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
相关型号:
OM6005SCVPBF
Power Field-Effect Transistor, 35A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON
OM6006SCV
Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON
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