OM6503SCV [INFINEON]
Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN;
| 型号： | OM6503SCV |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6503SC
OM6504SC
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
500 Volt, 20 And 30 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
PD
W
J
T
NUMBER
°C/W
°C
OM6503SC
OM6504SC
20
30
500
500
2.8
2.8
400
400
1.75
1.00
72
150
150
125
3.1
SCHEMATIC
MECHANICAL OUTLINE
.270
Collector
.240
.695
.685
.165
.155
.045
.035
.835
.815
.707
.697
.550
.530
Gate
1
2
3
C
E
G
Pin 1: Collector
.092 MAX.
.005
Pin 2: Emitter
Pin 3: Gate
.750
.500
Emitter
.065
.055
.200 TYP.
.140 TYP.
PACKAGE OPTIONS
Note: IGBTs are also available in Z-Tab, dual and
quad pak styles. Please call the factory for
more information.
6 PIN SIP
MOD PAK
4 11 R2
Supersedes 2 07 R1
3.1 - 141
PRELIMINARY DATA: OM6503SC
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6504SC
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
025Craw
IC = 250 µA
IC = 250 µA
ICES
Zero Gate Voltage
Drain Current
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
CE = 0 V
ICES
Zero Gate Voltage
Drain Current
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
CE = 0 V
V
V
o
S
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
e
,
V
V
Parameter - ON
Parameter - ON
nitsr,eAM10
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
5.0
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 20 A
TC = 25°C
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
8.0
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 30 A
TC = 25°C
3.0
3.0
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
VGE = 15 V, IC = 20 A
TC = 100°C
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
VGE = 15 V, IC = 30 A
TC = 125°C
35USA(0
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 20 A
gfs
Forward Transductance
Input Capacitance
S
VCE = 15 V, IC = 30 A
Cies
Coes
Cres
1700
215
pF VGE = 0
Cies
Coes
Cres
3500 pF VGE = 0
)8354
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
250 pF VCE = 25 V
5-7
Reverse Transfer Capacitance
115
Reverse Transfer Capacitance
50
pF f = 1 mHz
67FXA(5)0835-426
Switching-Resistive Load
Switching-Resistive Load
Td(on)
tr
Turn-On Time
Rise Time
60
nS VCC = 400 V, IC = 20 A
nS VGE = 15 V, Rg = 47
Td(on)
tr
Td(off)
tf
Turn-On Time
Rise Time
100 nS VCC = 400 V, IC = 30 A
200 nS VGE = 15 V, Rg = 100
240
Switching-Inductive Load
Turn-Off Delay Time
Fall Time
1.0
2.0
µS Tj = 125°C
µS
tr(Volt)
tf
Off Voltage Rise Time
Fall Time
.55
.60
1.2
3.0
µS VCEclamp = 400 V, IC = 20 A
µS VGE = 15 V, Rg = 100
µS L = 0.1 mH, Tj = 100°C
mJ
Switching-Inductive Load
tcross
Eoff
Cross-Over Time
Turn-Off Losses
Td(off)
tf
Turn-Off Delay Time
Current Fall Time
1.0
3.0
nS VCEclamp = 400 V, IC = 30 A
µS VGE = 15 V, Rg = 100
L = 0.1 mH, Tj = 125°C
相关型号：
OM6504SC
Insulated Gate Bipolar Transistor, 30A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
INFINEON
OM6505CSA
Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6505SA
Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6506CSA
Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6506SAT
Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6508CSA
Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6508SA
Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6508SAT
Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6509CSA
Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明