PTAC260302FCV1R250XTMA1 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET;


型号：	PTAC260302FCV1R250XTMA1
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET
文件：	总9页 (文件大小：1255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTAC260302FC

Thermally-Enhanced High Power RF LDMOS FET

30 W, 28 V, 2620 – 2690 MHz

Description

The PTAC260302FC is a 30-watt LDMOS FET intended for use in

multi-standard cellular power ampliﬁer applications in the 2620 to

2690 MHz frequency band. This device integrates a 10-W (main)

and a 20-W (peak) transistor, making it ideal for asymmetric Doherty

ampliﬁer designs. Features include input matching, high gain and

thermally-enhanced package with earless ﬂange. Manufactured with

Inﬁneon's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PTAC260302FC

Package H-37248H-4

Features

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 85 mA,

•ꢀ Asymmetric design

ƒ = 2620, 2655, 2690 MHz,

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

•ꢀ Broadband internal matching

•ꢀ Typical CW performance, 2690 MHz, 28 V

-10

-20

-30

-40

-50

-60

(Doherty conﬁguration, combined output)

- Output power @ P

- Efﬁciency = 54%

- Gain = 13 dB

= 30 W

3dB

2620 MHz

2655 MHz

2690 MHz

•ꢀ Typical single-carrier WCDMA performance,

2690 MHz, 28 V, 10 dB PAR

- Output power = 37.5 dBm avg

- Gain = 15.5 dB

- Efﬁciency = 45%

Efficiency

ACP Up

ACP Low

•ꢀ Capable of handling 10:1 VSWR @ 32 V, 30 W

(CW) output power

•ꢀ Integrated ESD protection

c260302fc_gr1

•ꢀ Human Body Model Class 1B (per ANSI/ESDA/

32 34 36

JEDEC JS-001)

Average Output Power (dBm)

•ꢀ Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon Doherty test ﬁxture)

= 28 V, I = 85 mA, V = 1.1 V, P = 5.6 W avg, ƒ = 2690 MHz,

GS1

OUT

3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF

Characteristic

Symbol

Min

14.5

Typ

15.5

Max

—

Unit

Linear Gain

Drain Efﬁciency

h_D

—

Adjacent Channel Power Ratio

ACPR

—

–27

–25

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 04, 2016-06-21

PTAC260302FC

DC Characteristics (each side)

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

BR)DSS

= 28 V, V = 0 V

—

µA

DSS

= 63 V, V = 0 V

—

Gate Leakage Current

= 10 V, V = 0 V

—

GSS

On-State Resistance

(main)

(peak)

= 10 V, V = 0.1 V

—

0.8

0.6

2.7

1.1

—

DS(on)

= 10 V, V = 0.1 V

—

Operating Gate Voltage (main)

(peak)

= 28 V, I

= 0.085 A

= 0 A

3.5

1.8

0.4

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

DSS

–6 to +10

225

°C

STG

–65 to +150

1.5

°C

Thermal Resistance

(main)

(peak)

70°C, 30 W CW)

qJC

°C/W

CASE

1.7

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PTAC260302FC V1 R0

PTAC260302FCV1R0XTMA1

H-37248H-4, Ceramic open-cavity, earless

Tape & Reel, 50 pcs

PTAC260302FC V1 R250

PTAC260302FCV1R250XTMA1 H-37248H-4, Ceramic open-cavity, earless

Tape & Reel, 250 pcs

Data Sheet

2 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Pinout Diagram (top view)

Peak

Main

S (ﬂange)

Description

Drain device 1 (peak)

Drain device 2 (main)

Gate device 1 (peak)

Gate device 2 (main)

Source

Lead connections for PTAC260302FC

Typical Performance (data taken in a production test fixture)

Single-carrier WCDMA Broadband

V_DD= 28 V, I_DQ= 85 mA, P_OUT= 37.5 dBm,

3GPP WCDMA signal, 10 dB PAR

Single-carrier WCDMA Broadband

V_DD= 28 V, I_DQ= 85 mA, P_OUT= 37.5 dBm,

3GPP WCDMA signal, 10 dB PAR

-5

-10

-15

-20

-25

-30

-35

-40

-5

-10

-15

-20

-25

-30

-35

-40

Efficiency

Return Loss

Gain

ACP Up

c260302fc_gr5

c260302fc_gr6

2580

2620

2660

2700

2740

2580

2620

2660

2700

2740

Frequency (MHz)

Data Sheet

3 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Typical Performance (cont.)

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 85 mA, ƒ = 2620 MHz,

3GPP WCDMA signal,

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 85 mA, ƒ = 2655 MHz,

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Efficiency

Gain

-20

-40

-60

-20

-40

-60

PAR @ 0.01% CCDF

c260302fc_gr3

c260302fc_gr2

Average Output Power (dBm)

CW Performance

V_DD= 28 V, I_DQ= 85 mA,

ƒ = 2620, 2655, 2690 MHz

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 85 mA, ƒ = 2690 MHz,

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Efficiency

Gain

-20

-40

-60

2620 MHz

2655 MHz

2690 MHz

PAR @ 0.01% CCDF

c260302fc_gr4

c260302fc_gr7

30 32

34 36 38 40 42 44 46

Output Power (dBm)

Average Output Power (dBm)

Data Sheet

4 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Typical Performance (cont.)

CW Performance

at selected V_DD

I_DQ= 85 mA, ƒ = 2620 MHz

at selected V_DD

I_DQ= 85 mA, ƒ = 2655 MHz

Efficiency

Gain

V_DD= 24 V

_DD= 28 V

V_DD= 32 V

V_DD= 24 V

_DD= 28 V

V_DD= 32 V

c260302fc_gr8

c260302fc_gr9

30 32 34 36 38 40 42 44 46

Output Power (dBm)

30 32 34 36 38 40 42 44 46

Output Power (dBm)

CW Performance

at selected V_DD

I_DQ= 85 mA, ƒ = 2690 MHz

Small Signal CW

Gain & Input Return Loss

V_DD= 28 V, I_DQ= 85 mA

17.5

15.0

12.5

10.0

7.5

Efficiency

-2

-4

Gain

-6

-8

-10

-12

-14

-16

5.0

V_DD= 24 V

V_DD= 28 V

2.5

V_DD= 32 V

IRL

c260302fc_gr10

c260302fc_gr11

0.0

30 32 34 36 38 40 42 44 46

Output Power (dBm)

1950 2150 2350 2550 2750 2950 3150

Frequency (MHz)

Data Sheet

5 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Load Pull Performance

Z Source

Z Load

Main Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 85 mA

1dB

Class AB

Max Output Power

Max PAE

Freq

[MHz]

Zs W

Zl W

Gain

[dB]

dBm

[W] PAE %

Zl W

Gain [dB]

[dBm]

P [W]

OUT

PAE %

66.4

OUT

2620

2655

2690

26 – j22

33 – j32

55 – j34

10.9 – j9.7

12.7 – j9.6

19.7

20.0

42.36

17.2

17.6

19.3

61.0

59.8

55.1

5.9 – j7.0

7.1 – j8.1

6.8 – j9.0

21.6

21.4

21.2

40.70

11.7

13.7

13.6

42.45

42.86

41.36

41.33

65.9

64.4

15.2 – j11.4 19.3

Peak Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 115 mA

1dB

Class AB

Max Output Power

Max PAE

Freq

[MHz]

Zs W

Zl W

Gain

[dB]

dBm

[W] PAE %

Zl W

Gain [dB]

[W]

OUT

PAE %

OUT

[dBm]

41.92

42.07

42.16

2620

2655

2690

36 - j41

42 - j31

55 - j33

11.5 - j14.9 19.6

11.9 - j12.7 20

12.9 - j15.0 19.5

43.11

20.5

20.4

19.4

58.8

61.1

57.2

6.4 - j13.4 20.9

7.0 - j13.9 20.8

7.8 - j15.1 20.5

15.6

16.1

16.4

63.9

63.2

61.8

43.09

42.87

Reference Circuit

DUT

PTAC2603022FC

Test Fixture Part No.

PCB

LTA/PTAC260302FC

Rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, ε_r= 3.66

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at (http://www.inﬁneon.com/rfpower)

Data Sheet

6 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Reference Circuit (cont.)

R04350, 030

R04350 030

(105)

(61)

VGSpeak

VDD

C105

C101

C201

C203

C208

R104

C104

R101

C205

C202

C102

RF_OUT

RF_IN

R103

C106

C206

C103

R102

VDD

VGSmain

C204

C207

PTAC260302F_OUT_03_D

PTAC260302F_IN_03_D

2 6 0 3 0 2 f c _ c d _ 3 - 7 - 1 3

Reference circuit assembly diagram (not to scale)

Component Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C103

C102, C104, C105, C106

R101

Capacitor, 10 µF, 50 V

Chip capacitor, 18 pF

Resistor, 50 Ohm

Resistor, 20 Ohm

Resistor, 10 Ohm

Hybrid coupler

Panasonic Electronic Components

EEV-HD1H100P

ATC100A180JW150XB

C16A50Z4

ATC

Anaren

R102

Panasonic Electronic Components

Anaren

ERJ-8GEYJ200V

ERJ-3GEYJ100V

X3C25P1_05S

R103, R104

Output

C201, C202

C203, C207

C204, C205

C206, C208

Chip capacitor, 18 pF

Capacitor, 10 µF

ATC

ATC100A180JW150XB

UMK325C7106MM-T

ATC100A180JW150XB

EEE-FP1V221AP

Taiyo Yuden

Chip capacitor, 18 pF

Capacitor, 220 µF, 35 V

ATC

Panasonic Electronic Components

Data Sheet

7 of 9

Rev. 04, 2016-06-21

PTAC260302FC

Package Outline Specifications

Package H-37248H-4

(8.89

[.350])

2X 45° x .64

[.025]

(5.08

[.200])

4X 3.49±0.51

[.138±.020]

(16.76

[.660])

9.78

[.385]

+0.38

4X R0.51

-0.13

+.015

-.005

R.020

[

]

4X 3.81

[.150]

2X 12.70

[.500]

3.76±0.25

[.148±.010]

19.81±0.20

[.780±.008]

1.57

[.062] SPH

(1.02

[.040])

H-37248H-4_sl_01_12-03-2012

20.57

[.810]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [.005] unless speciﬁed otherwise.

4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.

5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].

(Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

(http://www.inﬁneon.com/rfpower)

Data Sheet

8 of 9

Rev. 04, 2016-06-21

PTAC260302FC V1

Revision History

Revision Date

Data Sheet

Page

Subjects (major changes since last revision)

2012-03-05 Advance

2012-11-28 Advance

all

New product, proposed only.

1,3

Updated package and Package Outline.

Updated Pinout Diagram.

2014-02-12 Production

2016-06-21 Production

all

3 – 7

Product released to production. All information updated.

Performance graphs, load pull and circuit information added.

Updated ESD rating

Maximum junction temperature raised to 225°C, updated ordering info.

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

(highpowerRF@inﬁneon.com)

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2016-06-21

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

9 of 9

Rev. 04, 2016-06-21

PTAC260302FCV1R250XTMA1 [INFINEON]

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