PTF041501E [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs 150W, 450-500MHZ; 热增强型高功率射频LDMOS FET的150W ， 450-500MHZ
| 型号： | PTF041501E |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs 150W, 450-500MHZ |
| 文件： | 总11页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTF041501E
PTF041501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 450 – 500 MHz
Description
The PTF041501E and PTF041501F are thermally-enhanced, 150-
watt, internally-matched GOLDMOS FETs intended for ultra-linear
CDMA applications. They are characaterized for CDMA and
CDMA2000 operation from 450 to 470 MHz. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTF041501E
Package 30260
PTF041501F
Package 31260
Features
CDMA IS-95 Performance
•
•
•
Thermally-enhanced packages
VDD = 28 V, IDQ = 900 mA, f = 470 MHz
Broadband internal matching
Typical CDMA performance at 470 MHz, 28 V
- Average output power = 32 W
- Linear Gain = 21 dB
40
35
30
25
20
15
10
5
0
-10
-20
-30
-40
-50
-60
-70
Efficiency
- Efficiency = 31%
•
•
Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 165 W
- Efficiency = 61%
ACP FC – 0.75 MHz
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
ACPR FC + 1.98 MHz
•
•
•
Excellent thermal stability
Low HCI drift
Capable of handling 5:1 VSWR @ 28 V, 150 W
(CW) output power
36 37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm), Avg.
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 28 V, I
= 900 mA, P
= 60 W average, f = 470 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
—
Typ
21
Max
—
Unit
dB
%
G
ps
Drain Efficiency
ηD
—
42
—
Adjacent Channel Power Ratio
ACPR
—
–45
—
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 900 mA, P = 150 W PEP, f = 470 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
20.0
45
Typ
21
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
46
—
%
Intermodulation Distortion
IMD
—
–30
–29
dBc
DC Characteristics at T
= 25°C unless otherwise indicated
CASE
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 0 V
I
—
1.0
—
µA
Ω
GS
DSS
= 10 V, V = 0.1 V
R
DS(on)
—
0.07
2.9
—
DS
Operating Gate Voltage
Gate Leakage Current
= 28 V, I
= 900 mA
V
GS
2
4
V
DQ
= 10 V, V = 0 V
I
—
1.0
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
P
D
625
W
3.57
W/°C
°C
T
STG
–40 to +150
0.28
Thermal Resistance (T
= 70°C, 150 W CW)
R
θJC
°C/W
CASE
Ordering Information
Type
Package Outline
Package Description
Marking
PTF041501E
PTF041501F
30260
31260
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
PTF041501E
PTF041501F
Data Sheet
2 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Typical Performance (data taken in a production test fixture)
(at P-1dB)
POUT, Gain & Efficiency
vs. Frequency
IM3 vs. Output Power at Selected Biases
VDD = 28 V, IDQ = 900 mA
VDD = 28 V, f1 = 469, f2 = 470 MHz
23
22
21
20
19
18
65
60
55
50
45
-20
-25
Efficiency
-30
675 mA
-35
Gain
900 mA
-40
-45
1125 mA
-50
Output Power
-55
-60
-65
450
455
460
465
470
36
38
40
42
44
46
48
50
Frequency (MHz)
Output Power (dBm), avg.
Broadband Circuit Performance
Power Sweep
VDD = 28 V, IDQ = 900 mA, POUT avg.. = 48.75 dBm
VDD = 28 V, f = 470 MHz
23
22
21
20
19
18
17
16
50
30
20
10
0
Efficiency
40
IDQ = 1125 mA
IDQ = 900 mA
30
IDQ = 675 mA
Gain
20
Return Loss
10
-10
0
-20
39
41
43
45
47
49
51
53
55
445
450
455
460
465
470
475
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Typical Performance (cont.)
(at 1 dB Compression)
Output Power
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 900 mA, f = 470 MHz
vs. Supply Voltage
IDQ = 900 mA, f = 470 MHz
23
22
80
70
60
50
40
30
20
10
0
55
54
53
52
51
50
Gain
21
20
19
18
17
Efficiency
16
39
41
43
45
47
49
51
53
55
24
26
28
30
32
Supply Voltage (V)
Output Power (dBm)
Three-carrier CDMA 2000 Performance
Intermodulation Distortion vs. POUT
VDD = 28 V, IDQ = 900 mA, f = 470 MHz
(in a broadband circuit)
VDD = 28 V, IDQ = 900 mA, f1 = 469 MHz, f2 = 470 MHz
0
50
40
30
20
10
0
-35
-10
Efficiency
-40
-45
-50
-55
-60
-20
-30
-40
-50
-60
-70
3rd Order
5th
ACP Low
7th
48
ACP Up
ALT Up
36
38
40
42
44
46
50
36
38
40
42
44
46
48
50
Output Power (dBm), Avg.
Output Power (dBm), Avg.
Data Sheet
4 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
2.25 A
4.50 A
6.75 A
9.00 A
11.25 A
13.50 A
-20
0
20
40
60
80
100
Case Temperature (ºC)
Broadband Circuit Impedance
Z0 = 50 Ω
D
Z Source
Z Load
Z Load
G
470 MHz
450 MHz
S
Frequency
MHz
Z Source Ω
Z Load Ω
Z Source
470 MHz
R
jX
R
jX
450 MHz
450
1.07
1.03
1.02
1.01
0.99
–3.15
–3.04
–2.89
–2.80
–2.67
1.18
1.21
1.24
1.28
1.26
0.96
1.03
1.17
1.25
1.36
455
460
465
470
Data Sheet
5 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Reference Circuit
C1
0.001µF
R2
1.3KΩ
R1
1.2KΩ
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF C3
0.001µF
R3
R4
2KΩ
2KΩ
R5
R6
3.3KΩ
L1
10Ω
VDD
C10
100pF
C11
1µF
C12
10µF
C13
0.1µF
C14
10µF
C4
C5
R7
C6
10µF
0.1µF 5.1KΩ
120pF
50V
50V
50V
35V
l8
l7
l 5
C15
5.6pF
C17
11pF
C7
100pF
C19
100pF
DUT
RF_OUT
RF_IN
l1
l2
l3
l4
l6
l11
l12
l13
l14
l15
C8
2.1pF
C9
4.3pF
C16
5.1pF
C18
11pF
C20
8.2pF
l9
l10
L2
C22
1µF
C24
0.1µF
50V
041501ef_sch
C21
C23
10µF
50V
C25
100pF
10µF
50V
Reference Circuit Schematic for f = 460 MHz
Circuit Assembly Information
DUT
PCB
PTF041501E or PTF041501F
0.76 mm [.030"] thick, ε = 4.5
LDMOS Transistor
Rogers TMM10
2 oz. copper
r
1
Microstrip
Electrical Characteristics at 460 MHz
Dimensions: L x W (mm)
Dimensions: L xW (in.)
l1
l2
l3
l4
l5
l6
l7
l8
0.016 λ, 50.0 Ω
0.033 λ, 24.0 Ω
0.025 λ, 24.0 Ω
0.097 λ, 4.8 Ω
0.081 λ, 50.0 Ω
0.040 λ, 4.8 Ω
0.158 λ, 38.0 Ω
0.030 λ, 10.9 Ω
0.158 λ, 38.0 Ω
0.030 λ, 10.9 Ω
0.025 λ, 5.6 Ω
0.105 λ, 5.6 Ω
0.006 λ, 5.6 Ω
0.104 λ, 21.3 Ω
0.014 λ, 50.0 Ω
4.32 x 0.71
8.13 x 2.54
6.10 x 2.54
21.59 x 17.78
21.59 x 0.71
8.89 x 17.78
40.64 x 1.27
5.59 x 7.11
40.64 x 1.27
5.59 x 7.11
5.59 x 15.24
23.62 x 15.24
1.27 x 15.24
25.40 x 3.05
3.81 x 0.71
0.170 x 0.028
0.320 x 0.100
0.240 x 0.100
0.850 x 0.700
0.850 x 0.028
0.350 x 0.700
1.600 x 0.050
0.220 x 0.280
1.600 x 0.050
0.220 x 0.280
0.220 x 0.600
0.930 x 0.600
0.050 x 0.600
1.000 x 0.120
0.150 x 0.028
l9
l10
l11
l12
l13
l14
l15
1
Electrical characteristics are rounded.
Data Sheet
6 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Reference Circuit (cont.)
Component
Description
Suggested Manufacturer P/N or Comment
C1, C2, C3
C4
Capacitor, 0.001 µF
Digi-Key
Digi-Key
Digi-Key
ATC
PCC1772CT-ND
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
PCS6106TR-ND
P4525-ND
100B 121
C5, C13, C24
C6
Ceramic capacitor, 120 pF
Ceramic capacitor, 100 pF
C7, C10, C19,
C21
ATC
100B 101
C8
Ceramic capacitor, 2.1 pF
Ceramic capacitor, 4.3 pF
Capacitor, 1.0 µF
ATC
100B 2R1
C9
ATC
100B 4R3
C11, C22
ATC
920C105
C12, C14, C23,
C25
Capacitor, 10 µF, 50 V
Gerrette Electronics
TPS106K050R0400
C15
C16
C17, C18
C20
L1, L2
Q1
Ceramic capacitor, 5.6 pF
Ceramic capacitor, 5.1 pF
Ceramic capacitor, 11 pF
Ceramic capacitor, 8.2 pF
Ferrite, 6 mm
ATC
100B 5R6
ATC
100B 5R1
ATC
100B 110
ATC
100B 8R2
Ferroxcube
Infineon
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
53/3/4.6-452
BCP56
Transistor
QQ1
R1
Voltage regulator
LM7805
Chip resistor, 1.2 k-ohms
Chip resistor, 1.3 k-ohms
Chip resistor, 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor, 3.3 k-ohms
Chip resistor, 10 ohms
Chip resistor, 5.1 k-ohms
P1.2KGCT-ND
P1.3KGCT-ND
P2.0KECT-ND
3224W-202ETR-ND
P3.3KECT-ND
P10ECT-ND
P5.1KECT-ND
R2
R3
R4
R5
R6
R7
Data Sheet
7 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Reference Circuit (cont.)
VDD
3 5 V
1
+
LM
VDD
RF_OUT
VDD
RF_IN
041501ef_assy
Reference Circuit* (not to scale)
*Gerber Files for this circuit available on request
Data Sheet
8 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Package Outline Specifications
Package 30260
45° X (2.03
[.080])
2X 12.70
[.500]
4X R 1.52
[.060]
(2X 4.83±0.50
[.190±.020])
D
S
+0.10
LID 13.21
–0.15
13.72
[.540]
2X 3.25
[.128]
+.004
[.520
]
–.006
23.37±0.51
[.920±.020]
2X 1.63
[.064] R
G
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.038 [.0015]
-A-
27.94
[1.100]
34.04
[1.340]
1.02
[.040]
260-cases_30260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 03, 2005-04-15
PTF041501E
PTF041501F
Package Outline Specifications (cont.)
Package 31260
45° X 2.031
[.080]
2X 12.70
[.500]
2x 4.83±0.50
[.190±.020]
D
13.72
[.540]
+0.10
–0.15
LID 13.21
+.004
–.006
[.520
]
.
23.37±0.51
[.920±.020]
G
22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.038 [.0015] -A-
1.02
[.040]
SPH 1.57
[.062]
23.11
[.910]
260-cases_31260
S
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 03, 2005-04-15
PTF041501E/F
Confidential, Limited Internal
Revision History:
2005-04-15
Data Sheet
2004-11-12, Preliminary Data Sheet
Previous Version:
Page
Subjects (major changes since last revision)
Add impedance and circuit information
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2005-04-15
Published by InfineonTechnologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© InfineonTechnologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03, 2005-04-15
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