PTF081301F [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz; 热增强型高功率射频LDMOS FET的130W ， 869-960MHz
| 型号： | PTF081301F |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
| 文件： | 总11页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTF081301E
PTF081301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 869 – 960 MHz
Description
The PTF081301E and PTF081301F are 130-watt, internally-matched
GOLDMOS FETs intended for EDGE and CDMA applications in the 869
to 960 MHz bands. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTF081301E
Package 30248
PTF081301F
Package 31248
EDGE Modulation Spectrum Performance
Features
VDD = 28 V, IDQ = 950 mA, f = 959.8 MHz
•
•
•
Thermally-enhanced packages
Broadband internal matching
-30
-40
-50
-60
-70
-80
-90
60
50
40
30
20
10
0
Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
TCASE = 25°C
TCASE = 90°C
Efficiency
- Efficiency = 40%
•
•
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
400 kHz
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
600 kHz
48
•
•
•
Excellent thermal stability
Low HCI drift
36
38
40
42
44
46
50
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
Output Power (dBm)
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
= 28 V, I = 950 mA, P = 65 W, f = 959.8 MHz
V
DD
DQ
OUT
Characteristic
Error Vector Magnitude
Symbol
EVM (RMS)
ACPR
Min
—
Typ
2.5
–62
–74
18
Max
—
Unit
%
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
—
—
dBc
dBc
dB
ACPR
—
—
G
ps
—
—
Drain Efficiency
ηD
—
40
—
%
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 950 mA, P = 130 W PEP, f = 960 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
17
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
40
42
—
%
Intermodulation Distortion
IMD
—
–32
–29
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 0 V
I
—
1.0
—
µA
Ω
GS
DSS
= 10 V, I = 1 A
R
DS(on)
—
0.1
2.9
—
DS
Operating Gate Voltage
Gate Leakage Current
= 28 V, I
= 950 mA
V
GS
2.5
—
4.0
1.0
V
DQ
= 10 V, V = 0 V
DS
I
µA
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
P
D
473
W
2.70
W/°C
°C
T
STG
–40 to +150
0.37
Thermal Resistance (T
= 70°C)
R
θJC
°C/W
CASE
Ordering Information
Type
Package Outline
Package Description
Marking
PTF081301E
PTF081301F
30248
31248
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
PTF081301E
PTF081301F
Data Sheet
2 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Typical Performance (measurements taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 950 mA, POUT = 51.14 dBm
IM3 vs. Output Power at Selected Biases
VDD = 28 V, f1 = 959, f2 = 960 MHz, series show IDQ
55
45
35
25
15
15
-25
-30
-35
Efficiency
5
Return Loss
-5
850 mA
-40
950 mA
-15
-25
-45
Gain
1050 mA
-50
860
880
900
920
940
960
37
39
41
43
45
47
49
Frequency (MHz)
Output Power (dBm), Avg.
Power Sweep
VDD = 28 V, f = 960 MHz
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 950 mA, f = 960 MHz
19.0
21
70
60
Efficiency
IDQ = 1425 mA
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
20
19
18
17
16
15
14
50
40
30
20
10
0
Gain
IDQ = 950 mA
IDQ = 475 mA
40
42
44
46
48
50
52
54
40
42
44
46
48
50
52
54
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Typical Performance (cont.)
(at 1 dB Compression)
IS-95 CDMA Performance
Output Power
VDD = 28 V, IDQ = 950 mA, f = 860 MHz
vs. Supply Voltage
IDQ = 950 mA, f = 960 MHz
TCASE = 25°C
TCASE = 90°C
40
35
30
25
20
15
10
5
-40
-45
-50
-55
-60
-65
-70
-75
-80
53
52
51
50
ACP fC – 0.75 MHz
Efficiency
ADJ fC + 1.98 MHz
0
24
26
28
30
32
30
32
34
36
38
40
42
44
46
Supply Voltage (V)
Output Power (dBm), Avg.
EDGE EVM Performance
IS-95 CDMA Performance
VDD = 28 V, IDQ = 950 mA, f = 959.8 MHz
VDD = 28 V, IDQ = 950 mA, f = 860 MHz
35
30
25
20
15
10
5
6.0
5.0
4.0
3.0
2.0
1.0
0.0
60
50
40
30
20
10
0
TCASE = 25°C
TCASE = 90°C
Gain
Efficiency
Efficiency
EVM
46 48
0
36
38
40
42
44
50
30
32
34
36
38
40
42
44
46
Output Power (dBm)
Average Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 950 mA, f = 960 MHz
VDD = 28 V, IDQ = 950 mA, f1 = 959 MHz, f2 = 960 MHz
TCASE = 25°C
TCASE = 90°C
-20
45
30
15
0
-20
-30
-40
-50
-60
-70
-80
3rd Order
-30
-40
Efficiency
ACP fC – 1.98 MHz
ALT fC – 3.21 MHz
5th
-50
-60
7th
-70
-80
ALT fC + 5.23 MHz
37
39
41
43
45
47
49
30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm), Avg.
Output Power (dBm), PEP
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.8 A
3.0 A
5.2 A
7.6 A
9.9 A
12.0 A
-20
0
20
40
60
80
100
Case Temperature (ºC)
Data Sheet
5 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Broadband Circuit Impedance
E
N
Z0 = 50 Ω
E
G
D
W
Z Source
Z Load
Z Load
980 MHz
N
E
L
G
Z Source
V
A
860 MHz
S
A
O
980 MHz
Frequency
MHz
Z Source Ω
Z Load Ω
D
R
A
R
jX
R
jX
860 MHz
860
5.35
5.41
5.43
5.42
5.48
–3.80
–2.54
–2.16
–1.70
–1.24
1.59
1.56
1.56
1.56
1.50
0.99
1.74
1.91
2.15
2.34
H
T
920
940
E
L
E
960
V
A
W
980
-
-
See next page for Reference Circuit
Data Sheet
6 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Reference Circuit
VDD
QQ1
LM7805
R7
C26
L1
3.3KΩ
0.001µF
VDD
R1
R3
R5
10KΩ
C11
C24
0.001µF
10Ω
+C10
+C12
10µF
50V
1.2KΩ
C7
C8
C9
0.1µF
50V
10µF
50V
33pF
1µF
1µF
C25
0.001µF
C1
C2
+
R2
C3
R6
10µF 0.1µF
Q1
BCP56
R4
5.1KΩ
33pF
22KΩ
35V
50V
1.3KΩ
l7
l4
C13
DUT
6.8pF
C17
33pF
l2
RF_IN
l1
l3
l5
l6
l10
l11
l9
l12
RF_OUT
C4
33pF
C5
5.0pF
C6
0.5pF
C14
C15
C16
6.8pF
0.5pF
0.3pF
l8
L2
C22
C23
C21
+
C18
33pF
C19
1µF
C20
1µF
+
0.1µF
10µF
10µF
50V
50V
50V
081301_sch
Reference Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF081301E or PTF081301F
LDMOS Transistor
2 oz. copper
0.76 mm [.030"] thick, εr = 4.5
Rogers TMM4
1
Microstrip
Electrical Characteristics at 960 MHz
Dimensions: L x W (mm)
Dimensions: L xW (in.)
l1
0.075 λ, 50.0 Ω
0.101 λ, 50.0 Ω
0.055 λ, 50.0 Ω
0.289 λ, 74.0 Ω
0.061 λ, 7.5 Ω
0.036 λ, 7.9 Ω
0.132 λ, 50.0 Ω
0.114 λ, 7.9 Ω
0.047 λ, 7.9 Ω
0.134 λ, 38.0 Ω
0.029 λ, 50.0 Ω
12.70 x 1.35
17.27 x 1.35
9.40 x 1.35
0.500 x 0.053
0.680 x 0.053
0.370 x 0.053
2.000 x 0.025
0.365 x 0.640
0.215 x 0.600
0.890 x 0.050
0.685 x 0.600
0.285 x 0.600
0.880 x 0.085
0.195 x 0.054
l2
l3
l4
50.80 x 0.64
9.27 x 16.26
5.46 x 15.24
22.61 x 1.27
17.40 x 15.24
7.24 x 15.24
22.35 x 2.16
4.95 x 1.37
l5
l6
l7, l8
l9
l10
l11
l12
1
Electrical characteristics rounded
Data Sheet
7 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Reference Circuit (cont.)
C12
C11
VDD
C26
R5
R7
3 5 V
C25
R4
C1
VDD
+
1
LM
L1
R6
R1 R2 C3
QQ1
C24
C7
C2
C8 C9
R3
Q1
C10
C13
C16 C17
RF_IN
RF_OUT
VDD
C4
R5
R6
C5
C25
C26
R7
3 5 V
C21
C6
C14
C18
C15
C22
C1
C19
C20
1 +
LM
L2
QQ1
R4
C2
R1 R2
C24
C23
R3
Q1
C3
081301in_02
081301out_02
081301_assy
081301_assy_dtl
Reference Circuit* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1
Tantalum capacitor, TE Series, 10 µF, 35 V
Capacitor, 0.1 µF, 50 V, 1206
Digi-Key
Digi-Key
ATC
PC56106-ND, SMD
PCC104BCT-ND
100B 330
C2, C11, C22
C3, C4, C7, C17, C18 Capacitor, 33 pF
C5
Capacitor, 5.0 pF
Capacitor, 0.5 pF
Capacitor, 1 µF, 50 V
ATC
100B 5R0
C6, C15
ATC
100B 0R5
C8, C9, C19, C20
Digi-Key
19528-ND
C10, C12, C21, C23
Tantalum cap, 10 µF, 50 V, TPS Series, SMD Garrett Electronics
TPSE106K050R0400
100B 6R8
C13, C14
Capacitor, 6.8 pF
ATC
C16
Capacitor, 0.3 pF
ATC
100B 0R3
C24, C25, C26
Capacitor, 0.001 µF, 50 V, 0603
Ferrite, 6 mm
Digi-Key
Ferroxcube
Infineon
PCC1772CT-ND
53/3/4.6-452
BCP56
L1, L2
Q1
Transistor
QQ1
R1
Voltage regulator
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
LM7805
Resistor, 10 ohms, 1/4 W, 1206
Resistor, 5.1 k-ohms, 1/4 W, 1206
Resistor, 1.2 k-ohms, 1/10 W, 0603
Resistor, 1.3 k-ohms, 1/10 W, 0603
Potentiometer, 10 k-ohms, 0.25 W
Resistor, 22 k-ohms, 1/10 W, 0603
Resistor, 3.3 k-ohms, 1/4 W, 1206
P10ECT-ND
5.1KECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
3224W-103ETR-ND
P22KGCT-ND
P3.3KECT-ND
R2
R3
R4
R5
R6
R7
*Gerber files for this circuit are available on request.
Data Sheet
8 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
C
L
2X 4.83±0.51
[.190±.020]
D
S
9.78
[.385]
LID 9.40 +0.10
-0.15
C
L
[.370+.004
]
-.006
19.43 ±0.51
[.765±.020]
2X R1.63
[.064]
G
4X R1.52
[.060]
2X 12.70
[.500]
27.94
[1.100]
1.02
[.040]
SPH 1.57
[.062]
19.81±0.20
[.780±.008]
3.61±0.38
[.142±.015]
0.0381 [.0015] -A-
34.04
[1.340]
248-cases_30
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron (min) [100 microinch (min)]
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Package Outline Specifications (cont.)
Package 31248
( 45° X 2.72
[.107])
C
L
4.83±0.51
[.190±.020]
D
+0.10
19.43±0.51
[.765±.020]
LID 9.40
[.370
-0.15
+.004
]
C
L
-.006
9.78
[.385]
G
2X 12.70
[.500]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
1.02
[.040]
0.0381 [.0015] -A-
S
20.57
[.810]
3.61±0.38
[.142±.015]
248-cases_31248
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron (min) [100 microinch (min)]
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 03, 2005-05-02
PTF081301E/F
Confidential – Internal Distribution
Revision History:
2005-05-02
Data Sheet
2004-08-27, Data Sheet
Previous Version:
Page
1, 2
Subjects (major changes since last revision)
PTF081301F released
7, 8
Circuit descriptions
9, 10
Add and revise case outlines
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2005-05-02
Published by InfineonTechnologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© InfineonTechnologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03, 2005-05-02
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