PTFA211001F [INFINEON]

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31248, 2 PIN;


型号：	PTFA211001F
厂家：	Infineon
描述：	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31248, 2 PIN 放大器 CD 晶体管
文件：	总6页 (文件大小：225K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary PTFA211001E

PTFA211001F

Thermally Enhanced High Power RF LDMOS FETs

100 W, 2110–2170 MHz

Features

Description

•

Thermally enhanced packaging

The PTFA211001E and PTFA211001F are thermally enhanced an

internally matched 100-watt GOLDMOS FETs intended for WCDMA

applications from 2110 to 2170 MHz. Thermally enhanced packaging

provides the coolest operation possible. Full gold metallization

ensures excellent device lifetime and reliability.

Internal matching for wideband performance

Typical two–carrier 3GPP WCDMA

performance

- Average output power = 22 W at –37 dBc

- Efficiency = 28.5%

Intermodulation Distortion vs. Output Power

for selected currents

•

Typical CW performance

- Output power at P–1dB = 110 W

- Gain = 16.4 dB

-32

- Efficiency = 57%

Freq = 2.14 GHz, Vdd = 28V

-34

2Carrier 3GPP WCDMA , 10MHz Spacing

Integrated ESD protection: Human Body Model,

Class 1 (minimum)

8dB PAR

-36

•

Excellent thermal stability, low HCI drift

-38

Capable of handling 10:1 VSWR at 28 V,

100 W (CW) output power

1200 mA

-40

1000 mA

-42

-44

-46

-48

900 mA

800 mA

PTFA211001E*

Package 30248

ESD: Electrostatic discharge sensitive device — observe handling

precautions!

PTFA211001F*

Package 31248

RF Characteristics at T

= 25°C unless otherwise indicated

CASE

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I = 1050 mA, P = 22 W AVG

OUT

f = 2140 MHz, f = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF

Characteristic

Intermodulation Distortion

Gain

Symbol

Min

—

Typ

–37

Max

—

Units

dBc

IMD

—

16.4

28.5

—

Drain Efficiency

η_D

—

*See Infineon distributor for future availability.

Preliminary Data Sheet

2004-06-04

Preliminary PTFA211001E

PTFA211001F

Two–Tone Measurements (tested in Infineon test fixture)

= 28 V, I = 950 mA, P = 100 W PEP, f = 2170 MHz, tone spacing = 1 MHz

OUT

Characteristic

Gain

Symbol

Min

—

Typ

16.4

Max

—

Units

Drain Efficiency

η_D

IMD

—

Intermodulation Distortion

—

–30

–28

dBc

DC Characteristics at T

= 25°C unless otherwise indicated

CASE

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Units

Drain–Source Breakdown Voltage

Drain Leakage Current

On–State Resistance

= 0 V, I = 10 µA

(BR)DSS

= 28 V, V

= 0 V

—

1.0

—

µA

Ω

DSS

= 10 V, V = 0.1 V

DS(on)

—

0.1

2.2

0.01

Operating Gate Voltage

Gate Leakage Current

= 28 V, I

= 1050 mA

1.8

—

3.0

1.0

= 10 V, V = 0 V

GSS

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain–Source Voltage

Gate–Source Voltage

Junction Temperature

Storage Temperature Range

DSS

–0.5 to +12

200

°C

STG

–40 to +150

0.38

°C

Thermal Resistance (T

= 70°C, 100 W CW)

θJC

°C/W

CASE

Ordering Information

Type

Package Outline

Package Description

Marking

PTFA211001E*

PTFA211001F*

30248

31248

Thermally enhanced slotted flange, single-ended

Thermally enhanced earless flange, single-ended

PTFA211001E

PTFA211001F

*See Infineon distributor for future availability.

Preliminary Data Sheet

2004-06-04

Preliminary PTFA211001E

PTFA211001F

Typical Performance in broadband test fixture

Broadband 2-tone Performance

Power Sweep, Pulsed Conditions

Freq = 2.14 GHz, Vdd = 28V, Idq = 900 mA

Pulse Width = 8 µs, Pulse Period = 40 µS

EFFICIENCY

IRL

-10

-20

-30

-40

-50

P -1 dB

50.86 dBm

51.68 dBm

Vdd = 28V, Idq = 900 mA

GAIN

P -3 dB

IMD

2100

2150

FREQUENCY (MHz)

2200

Input Power (dBm), CW Pulsed

Intermodulation Distortion Products

vs. Frequency Spacing

Intermodulation Distortion vs. Output Power

for selected currents

-20

Freq = 2.14GHz, Vdd = 28V, Idq = 900mA

Pout = 50W Avg

Freq = 2.14 GHz, Vdd = 28V

Tone Spacing = 1 MHz

-25

IM3

-30

1.2 A

1.0 A

-35

-40

-45

-50

-55

-35

1.1 A

-40

-45

-50

-55

IM5

IM7

0.9 A

0.8 A

OUTPUT POWER (dBm) , PEP

Frequency Spacing (MHz)

Data Sheet

2004-01-16

Preliminary PTFA211001E

PTFA211001F

Package Outline Specifications

Package 30248

(45° X 2.72

[.107])

2X 4.83± 0.51

[.190± .020]

9.78

[.385]

+ 0.10

-0.15

LID 9.40

+ .004

[.370

]

-.006

19.43 ± 0.51

[.765± .020]

2X R1.63

[.064]

4X R1.52

[.060]

2X 12.70

[.500]

27.94

[1.100]

1.02

[.040]

19.81± 0.20

[.780± .008]

SPH 1.57

[.062]

3.76± 0.38

[.142± .015]

0.0381 [.0015]

-A-

34.04

[1.340]

0.51

[.020]

ERA-H-30248-2-1-230

Notes: Unless otherwise specified

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. Pins: D = drain, S = source, G = gate

4. Lead thickness: 0.10± +0.051/–0.025 [.004 +.002/–.001 ]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Preliminary Data Sheet

2004-06-04

Preliminary PTFA211001E

PTFA211001F

Package Outline Specifications (cont.)

Package 31248

(4 5 ° X 2 .7 2

[.107])

4 .8 3 ± 0 .5 1

[.1 9 0 ± .0 2 0 ]

1 9 .4 3 ± 0 .5 1

[.7 6 5 ± .0 2 0 ]

LID 9 .4 0

[.3 7 0 ]

9.78

[.385]

2X 12.70

[.5 0 0 ]

0 .5 1

[.0 2 0 ]

1 9 .8 1 ± 0.20

[.7 8 0 ± .0 0 8 ]

S P H 1.58

[.062]

1 .0 2

[.040]

0 .0 2 5 [.0 0 1 ]

-A-

ERA-H-21248-2-1-23

2 0 .5 7

[.810]

3 .6 1 ± 0.38

[.1 4 2 ± .015]

Notes: Unless otherwise specified

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. Pins: D = drain, S = source, G = gate

4. Lead thickness: 0.10± +0.051/–0.025 [.004 +.002/–.001 ]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Preliminary Data Sheet

2004-06-04

PTFA211001E/F

Confidential, Limited Internal

Revision History:

2004-06-04

none

Subjects (major changes since last revision)

Preliminary Data Sheet

Previous version:

Page

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@infineon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GOLDMOS) USA

or +1 408 776 0600 International

GOLDMOS^®is a registered trademark of Infineon Technologies AG.

Edition 2004-06-04

Published by InfineonTechnologies AG,

St.-Martin-Strasse 53,

81669 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

Preliminary Data Sheet

2004-06-04

PTFA211001F [INFINEON]

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