PTFA211801EV5R0 [INFINEON]

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN;


型号：	PTFA211801EV5R0
厂家：	Infineon
描述：	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN 局域网 CD 晶体管
文件：	总9页 (文件大小：557K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFA211801E

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET

180 W, 2110 – 2170 MHz

Description

The PTFA211801E is a thermally-enhanced, 180-watt, internally

matched LDMOS FET intended for WCDMA applications. It is

characaterized for single- and two-carrier WCDMA operation from

2110 to 2170 MHz. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PTFA211801E

Package H-36260-2

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1.2 A, ƒ = 2140 MHz,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing

•

Broadband internal matching

Typical two-carrier WCDMA performance at 2140

MHz, 28 V

- Average output power = 45.5 dBm

- Linear Gain = 15.5 dB

- Efﬁciency = 27.5%

- Intermodulation distortion = –36 dBc

- Adjacent channel power = –41 dBc

-25

-30

-35

-40

-45

-50

-55

Efficiency

IM3

•

Typical CW performance, 2170 MHz, 30 V

- Output power at P

= 180 W

1dB

- Efﬁciency = 52%

•

Integrated ESD protection

Excellent thermal stability, low HCI drift

ACPR

Capable of handling 10:1 VSWR @ 28 V,

150 W (CW) output power

•

Pb-free and RoHS-compliant

Average Output Power (dBm)

RF Characteristics

WCDMA Measurements (tested in Inﬁneon test ﬁxture)

= 28 V, I = 1.2 A, P = 35 W average, ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

14.5

Typ

15.5

27.5

–36

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

—

IMD

—

–34

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

RF Characteristics (cont.)

CW Measurements (tested in Inﬁneon test ﬁxture)

= 28 V, I

= 1.2 A, P

= 150 W average, ƒ = 2170 MHz

OUT

Characteristic

Symbol

Min

Typ

Max

Unit

Gain Compression

comp

—

0.5

1.0

Two-tone Measurements (not subject to production test—veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 28 V, I

= 1.2 A, P = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz

OUT

Characteristic

Gain

Symbol

Min

—

Typ

15.5

38.5

–28

Max

—

Unit

Drain Efﬁciency

—

Intermodulation Distortion

IMD

—

dBc

DC Characteristics

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

On-State Resistance

= 0 V, I = 10 mA

(BR)DSS

= 28 V, V

= 63 V, V

= 0 V

—

1.0

10.0

—

µA

DSS

—

= 10 V, V = 0.1 V

—

0.05

2.5

—

DS(on)

Operating Gate Voltage

Gate Leakage Current

= 28 V, I

= 1.2 A

2.0

—

3.0

1.0

= 10 V, V = 0 V

µA

GSS

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

DSS

–0.5 to +12

200

°C

–40 to +150

0.31

°C

STG

Thermal Resistance (T

= 70°C, 150 W CW)

qJC

°C/W

CASE

Data Sheet

2 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

Ordering Information

Type and Version

PTFA211801E V5

Package Outline

H-36260-2

Package Description

Shipping

Thermally-enhanced slotted ﬂange, single-ended Tray

PTFA211801E V5 R250

H-36260-2

Thermally-enhanced slotted ﬂange, single-ended Tape & Reel

Typical Performance (data taken in a production test ﬁxture)

Two-carrier WCDMA at Various Biases

Broadband Performance

V_DD= 28 V, I_DQ= 1.2 A, P_OUT= 45.0 dBm CW

V_DD= 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing, series show I_DQ

-30

-35

-5

Efficiency

-10

-15

-20

-25

-30

1.4 A

1.3 A

Return Loss

-40

-45

1.2 A

Gain

1.1 A

-50

-55

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

Output Power, Avg. (dBm)

Data Sheet

3 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

Typical Performance (cont.)

Power Sweep, CW Conditions

V_DD= 28 V, I_DQ= 1.2 A, ƒ = 2170 MHz

Power Sweep, CW Conditions

V_DD= 30 V, I_DQ= 1.2 A, ƒ = 2170 MHz

Efficiency

T_CASE= 25°C

T_CASE= 90°C

Gain

20 40 60 80 100 120 140 160 180

Output Power (W)

20 40 60 80 100 120 140 160 180

Output Power (W)

Two-tone Drive-up

Intermodulation Distortion Products

vs. Tone Spacing

V_DD= 28 V, I_DQ= 1.2 A,

= 2140 MHz, tone spacing = 1 MHz

V_DD= 28 V I_DQ= 1.2 A,

ƒ = 2140 MHz,

P_OUT= 51 dBm PEP

-20

-25

-30

-35

-40

-45

-50

-55

-20

-25

-30

-35

-40

-45

-50

-55

-60

-65

Efficiency

3rd Order

IM3

IM5

IM7

5th

7th

Tone Spacing (MHz)

Output Power, PEP (dBm)

Data Sheet

4 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

Reference Circuit

0.001µF

1.3K



1.2K 

QQ1

LM7805

VDD

BCP56

0.001µF C3

0.001µF

2K 



5.1K 

VDD

C12

9.1pF

C13

0.02µF

C14

1µF

C15

22µF

0.1µF

10µF

35V

0.1µF 5.1K

.01µF

9.1pF

50V

10

C10

8.2pF

C21

8.2pF

DUT

l10

l11

l12

l13

l14

RF_OUT

RF_IN

0.5pF

C11

1.5pF

C20

0.3pF

A211801ef _sch

C17

0.02µF

C16

9.1pF

C18

1µF

C19

22µF

50V

Reference circuit schematic for ƒ = 2140 MHz

Electrical Characteristics at 2140 MHz

Transmission

Electrical

Dimensions: L x W (mm)

Dimensions: L x W (in.)

Line

Characteristics

0.097 l, 50.0 W

0.267 l, 50.0 W

0.136 l, 42.0 W

0.087 l, 42.0 W

0.018 l, 11.4 W

0.077 l, 6.9 W

7.37 x 1.40

0.290 x 0.055

0.782 x 0.055

0.403 x 0.073

0.256 x 0.073

0.049 x 0.403

0.206 x 0.700

0.618 x 0.059

0.760 x 0.065

0.230 x 1.000

0.220 x 1.000 / 0.078

0.057 x 0.078

0.262 x 0.055

1.210 x 0.055

19.86 x 1.40

10.24 x 1.85

6.50 x 1.85

1.24 x 10.24

5.23 x 17.78

15.70 x 1.50

19.30 x 1.65

5.84 x 25.40

5.59 x 25.40 / 1.98

1.45 x 1.98

0.207 l, 48.0 W

0.256 l, 45.0 W

0.087 l, 5.0 W

l8, l9

l10

l11 (taper)

l12

l13

l14

0.073 l, 5.0 W / 40.0 W

0.019 l, 40.0 W

0.087 l, 50.0 W

0.403 l, 50.0 W

6.65 x 1.40

30.73 x 1.40

Data Sheet

6 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

35V

RF_IN

RF_OUT

A211801ef _assy

Reference circuit assembly diagram (not to scale)*

Circuit Assembly Information

DUT

PTFA211801E

LDMOS Transistor

Rogers TMM4

PCB

^{0.76 mm [.030"] thick,}er = 4.5

2 oz. copper

Component

C1, C2, C3

Description

Capacitor, 0.001 µF

Suggested Manufacturer

P/N

Digi-Key

ATC

PCC1772CT-ND

PCS6106TR-ND

PCC104BCT

200B103

Tantalum capacitor, 10 µF, 35 V

Capacitor, 0.1 µF

C5, C6

Capacitor, 0.01 µF

C8, C12, C16

Ceramic capacitor, 9.1 pF

Ceramic capacitor, 0.5 pF

Ceramic capacitor, 8.2 pF

Ceramic capacitor, 1.5 pF

Ceramic capacitor, 0.02 µF

Ceramic capacitor, 1 µF

Electrolytic capacitor, 22 µF, 50 V

Ceramic capacitor, 0.3 pF

Transistor

ATC

100B 9R1

ATC

100B 0R5

C10, C21

C11

ATC

100B 8R2

ATC

100B 1R5

C13, C17

C14, C18

C15, C19

C20

ATC

200B 203

ATC

920C105

Digi-Key

ATC

PCE3374CT-ND

100B 0R3

Inﬁneon Technologies

National Semiconductor

Digi-Key

BCP56

QQ1

Voltage regulator

LM7805

Chip resistor, 1.2 k W

Chip resistor, 1.3 k W

Chip resistor, 2 k W

P1.2KGCT-ND

P1.3KGCT-ND

P2KECT-ND

3224W-202ETR-ND

P10ECT-ND

P5.1KECT-ND

Potentiometer, 2 k W

Chip resistor, 10 W

R5, R9

R6, R7, R8

Chip resistor, 5.1 k W

* Gerber Files for this circuit available on request

Data Sheet

7 of 9

Rev. 07, 2015-03-03

PTFA211801E

Confidential, Limited Internal Distribution

Package Outline Speciﬁcations

Package H-36260-2

2X 12.70

[.500]

4.83±0.50

[.190±.020]

45° X 2.031

45° X [.080]

4X R1.52

[R.060]

23.37±0.51

[.920±.020]

+0.10

LID13.21

–0.15

.520^+.004

[

]

–.006

13.72

[.540]

2X R1.63

[R.064]

3- 6260 - 2_ po _02 -18 - 2010

27.94

[1.100]

LID 22.35±0.23

[.880±.009]

1.02

[.040]

4.11±0.38

[.162±.015]

34.04

[1.340]

SPH 1.57

[.062]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ± 0.127 [.005] unless speciﬁed otherwise.

4. Pins: D = drain, S = source, G = gate.

5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.inﬁneon.com/rfpower

Data Sheet

8 of 9

Rev. 07, 2015-03-03

PTFA211801 E V5

Conﬁdential, Limited Internal Distribution

Revision History:

2015-03-03

Data Sheet

Previous Version:

2011-01-11, Data Sheet

Page

Subjects (major changes since last revision)

All

Not recommended for new design

All

Data Sheet reﬂects released product speciﬁcations

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@inﬁneon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2015-03-03

Published by

Inﬁneon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of

Inﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended

to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

9 of 9

Rev. 07, 2015-03-03

PTFA211801EV5R0 [INFINEON]

相关型号：

PTFA211801EV5R0XTMA1

PTFA211801EV5R250

PTFA211801EV5R250XTMA1

PTFA211801EV5XWSA1

PTFA211801E_11

PTFA211801F

PTFA212001E

PTFA212001E-200W

PTFA212001EV4R250XTMA1

PTFA212001F

PTFA212001F-200W

PTFA212001FV4