PTFA220121MV4XUMA1 [INFINEON]
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 4.00 X 4.00 MM, 1.42 MM HEIGHT, GREEN, PLASTIC, SON-10;
| 型号： | PTFA220121MV4XUMA1 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 4.00 X 4.00 MM, 1.42 MM HEIGHT, GREEN, PLASTIC, SON-10 放大器 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTVA120121M
Thermally-Enhanced High Power RF LDMOS FET
12 W, 50 V, 500 – 1400 MHz
Description
The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed
for use in power amplifier applications in the 500 MHz to 1400 MHz
frequency band.Features include high gain and a thermally-enhanced,
surface-mount package. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
PTVA120121M
Package PG-SON-10
and superior reliability.
Features
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 50 mA, ƒ = 821 MHz
3GPP WCDMA signal,
•ꢀ Unmatched
•ꢀ Target pulsed CW performance at 821 MHz, 48 V
PAR = 10 dB, 3.84 MHz BW
- Ouput power = 12 W P
- Efficiency = 62%
- Gain = 22 dB
1dB
24
20
16
12
8
75
50
25
0
Gain
•ꢀ Capable of withstanding a 10:1 load mismatch at
Efficiency
50 V, 12 W (CW) output power
•ꢀ Integrated ESD protection
•ꢀ Human Body Model class 1B (per ANSI/ESDA/
JEDEC JS-001)
•ꢀ Excellent thermal stability
-25
-50
-75
PAR @ 0.01% CCDF
•ꢀ Pb-free and RoHS-compliant
4
0
ptva120121m_g1
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Characteristics (tested in Infineon production test fixture)
= 48 V, I = 35 mA, P = 3.5 W avg, ƒ = 821 MHz, 3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01%
V
DD
DQ
OUT
CCDF.
Characteristic
Gain
Symbol
Min
20.5
35.5
—
Typ
21.5
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
38.5
—
%
Adjacnet Channel Power Ratio
ACPR
–33.5
–31.5
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
105
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
= 50 V, V = 0 V
I
I
—
0.1
1.0
0.1
—
µA
µA
µA
W
DS
DS
GS
DSS
DSS
GSS
V
= 105 V, V = 0 V
—
—
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
I
—
—
DS
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
2.96
3.57
DS
V
DS
= 48 V, I
= 0.05 A
V
GS
3
4
V
DQ
Maximum Ratings
Parameter
Symbol
Value
105
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
GS
–6 to +12
0 to +55
225
V
V
V
DD
Junction Temperature
Storage Temperature Range
T
J
°C
°C
T
STG
–65 to +150
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance (T
= 70°C, 13 W CW)
R
qJC
4.9
°C/W
CASE
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PTVA120121M V1 R1K
PTVA120121MV1R1KXUMA1
PG-SON-10, molded plastic, SMD
Tape & Reel, 1,000 pcs
Data Sheet
2 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Evaluation Boards
Order Code
Frequency
Description
LTN/PTVA120121M V1
LTN/PTVA120121M E2
LTN/PTVA120121M E3
758 – 821 MHz
1200 – 1400 MHz
960 – 1215 MHz
Class AB, RO4350
Class AB, RO3010
Class AB, RO3010
Data Sheet
3 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Typical RF Performance (data taken in production test fixture)
Single-carrier WCDMA Broadband
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 50 mA, ƒ = 821 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
Performance
VDD = 48 V, IDQ = 50 mA, POUT = 35.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
24
23
23
22
22
21
21
60
55
50
45
40
35
30
-20
-30
-40
-50
-60
-70
-80
60
50
40
30
20
10
0
Gain
Efficiency
ACPU
ACPL
Eff
ptva120121m_g2
ptva120121m_g3
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Average Output Power (dBm)
675
725
775
825
875
925
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ = 50 mA, POUT = 35.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
CW Performance
VDD = 48 V, IDQ = 50 mA
-10
0
26
24
22
20
18
16
14
70
60
50
40
30
20
10
Gain
-15
-20
-25
-30
-35
-40
-5
-10
-15
-20
-25
-30
IRL
Efficiency
821 MHz
758 MHz
791 MHz
ACPU
ptva120121m_g4
ptva120121m_g5
675
725
775
825
875
925
25
30
35
40
45
Output Power (dBm)
Frequency (MHz)
Data Sheet
4 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Typical RF Performance (cont.)
CW Performance
Small Signal CW
Gain & Input Return Loss
at various VDD
IDQ = 50 mA, ƒ = 821 MHz
VDD = 48 V, IDQ = 50 mA
24
22
20
18
16
14
12
-2
26
70
60
50
40
30
20
10
Gain
24
-6
Gain
22
-10
-14
-18
-22
-26
Efficiency
20
IRL
18
VDD = 41 V
VDD = 48 V
VDD = 55 V
16
14
ptva120121m_g6
ptva120121m_g7
27
31
35
39
43
650
700
750
800
850
900
950
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Load Pull Performance – CW signal: 48 V, I
= 36 mA
DQ
P
1dB
Max Output Power
Max PAE
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
[dB]
P
P
[W]
Gain
[dB]
P
P
OUT
PAE
PAE
OUT
OUT
OUT
[dBm]
41.69
42.00
41.94
[dBm]
37.43
36.97
36.60
[W]
5.53
4.97
4.55
[%]
66.8
63.0
63.0
[%]
84.0
81.6
80.2
758
791
821
6.22+j14
6.07+j12
44.9+j21.8
36.2+j14.5
35+j14.5
22.64
21.85
21.64
14.76
15.93
15.62
26.9+j64.4
23+j62.4
25.3
25
6.14+j10.9
14.8+j50.4
24.9
Data Sheet
5 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Reference Circuit, 758 – 821 MHz
RO4350, 30 MIL (169)
VDD
C203
C201
C101
C102
RF_IN
C204
RF_OUT
DUT
C202
VGG
C103
R803
C803
C801
C802
R804
S1
R101
R801
R802
S3
S2
R102
PTVA120121M_06
p
t v a 1 2 0 1 2 1 m _ C D _ 2 0 1 6 - 0 7 - 0 8
Reference circuit assembly diagram (not to scale)
Data Sheet
6 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTVA120121M V1
Test Fixture Part No.
PCB
LTN/PTVA120121M V1
Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66, ƒ = 758 – 821 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Input
Description
Manufacturer
P/N
C101
Capacitor, 6.8 pF
ATC
ATC100B6R8CW500XB
ATC100B470KW500XB
ERJ-8GEYJ100V
ERJ-8GEYJ221V
ECJ-1VB1H102K
ERJ-8GEYJ100V
ERJ-3GEYJ122V
ERJ-3GEYJ132V
ERJ-8GEYJ101V
3224W-1-202E
C102, C103
R101
Capacitor, 47 pF
ATC
Resistor, 10 ohms
Resistor, 200 ohms
Capacitor, 1000 pF
Resistor, 10 ohms
Resistor, Chip 1.2K ohms
Resistor, Chip 1.3K ohms
Resistor, 100 ohms
Resistor, Variable 2K ohms
Voltage Regulator
Transistor
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Bourns Inc.
R102
C801,C802, C803
R801
R802
R803
R804
S1
S2
Texas Instruments
LM78L05ACM
S3
Infineon Technologies
BCP56
Output
C201, C204
C202
Capacitor, 47 pF
Capacitor, 0.9 pF
Capacitor, 10 µf
ATC
ATC100B470KW500XB
ATC100B0R9CW500XB
TPSE106M050R0400
ATC
C203
AVX / Geratte
Data Sheet
7 of 9
Rev. 02.1, 2017-02-03
PTVA120121M
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
4.00
[.157]
6
7
8
9
10
.815
[.0321]
S
4.00
[.157]
2.97
[.117]
2.37
[.093]
5X .515
[.0203] 2 PLACES
5
4
3
2
1
INDEX
MARKING
INDEX
MARKING
4X 0.65
[.026] 2 PLACES
TOP VIEW
0.30
[.012]
3.40
[.134]
BOTTOM VIEW
0.38
1.42
[.056]
[.015] BOTH SIDES
PG-SON-10_po_02_12-07-2012
0.05 [.002]
SIDE VIEW
Diagram Notes–unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.1 ꢁꢀ.ꢀꢀ4ꢂ unless specified otherwise.
4. Package dimensions: 4.ꢀ mm X 4.ꢀ mm X 1.42 mm.
5. Pins: S = Source, 1-5 = Gate, 6-1ꢀ = Drain.
6. NiPdAu plating (gold top layer) : ꢀ.ꢀ25 – ꢀ.127 micronꢁ1 – 5 microinchꢂ.
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
8 of 9
Rev. 02.1, 2017-02-03
PTVA120121M V1
Revision History
Revision
01
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
2014-10-07
2016-07-14
2017-02-03
Data Sheet reflects advance specification for product development
Data Sheet reflects released product specification
Update operating voltage and junction temperature
02
Production
All
02.1
Production
2
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2017-02-03
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 02.1, 2017-02-03
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