PTFB091507FHV1 [INFINEON]
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-34288-4/2, 4 PIN;
| 型号： | PTFB091507FHV1 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-34288-4/2, 4 PIN 放大器 晶体管 |
| 文件： | 总13页 (文件大小：1781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB091507FH
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 920 to 960 MHz
frequency band.Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excel-
lent thermal performance and superior reliability.
PTFB091507FH
Package H-34288-4/2
Features
Power Sweep, CW
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
•
•
•
Broadband internal matching
Wide video bandwidth
Typical CW performance, 960 MHz, 28 V
- Average output power = 160 W
- Gain = 19.5 dB
21.0
20.5
20.0
19.5
19.0
18.5
18.0
70
60
50
40
30
20
10
- Efficiency = 60%
•
•
•
Integrated ESD protection
Low thermal resistance
Gain
Thermally enhanced package is Pb-free and RoHS
compliant
•
Capable of handling 10:1 VSWR @ 28 V, 160 W
(CW) output power
Efficiency
41
43
45
47
49
51
53
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (not subject to production test; verified by design/characterization in Infineon test fixture)
= 28 V, I = 1.2 A, P = 50 W average
V
DD
DQ
OUT
ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Gain
Symbol
Gps
Min
—
Typ
20
Max
—
Unit
dB
Drain Efficiency
Adjacent Channel Power Ratio
ηD
—
38
—
%
ACPR
—
–36
—
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY 1 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 1.2 A, P = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Gps
Min
19.5
43.5
—
Typ
20
Max
—
Unit
dB
Drain Efficiency
D
45
—
%
Intermodulation Distortion
IMD
–30
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1.0
1.0
—
µA
µA
Ω
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
DS
GS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
0.05
3.9
—
DS
V
DS
= 28 V, I
= 1.2 A
V
GS
2.5
—
4.5
1.0
V
DQ
V
GS
= 10 V, V = 0 V
I
GSS
µA
DS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
200
V
T
°C
J
T
–40 to +150
0.31
°C
STG
Thermal Resistance (T
= 70°C)
R
°C/W
CASE
θJC
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFB091507FH V1
H-34288-4/2
Ceramic open-cavity, earless flange
Ceramic open-cavity, earless flange
Tray
PTFB091507FH V1 R250 H-34288-4/2
Tape & Reel, 250 pcs
Data Sheet – DRAFT ONLY
2 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Typical Performance (data taken in Infineon test fixture)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
Two-tone Drive-up
VDD = 28 V, IDQ = 2.4 A,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
VDD = 28 V, IDQ = 1.2 A, POUT = 63 W
-20
-30
-40
-50
-60
50
45
40
35
30
25
20
15
10
60
50
40
30
20
10
0
Efficiency
Input Return Loss
-10
-20
-30
-40
-50
Efficiency
IMD3
IMD 3rd Order
Gain
890
38
40
42
44
46
48
50
840
940
990
1040
Output Power, PEP (dBm)
Frequency (MHz)
Two-tone Drive-up at
Selected Frequencies
VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz
Two-tone Drive-up
VDD = 28 V, IDQ = 1.2 A,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
21.0
50
-20
960 MHz
940 MHz
920 MHz
Gain
20.5
20.0
19.5
19.0
40
30
20
10
-30
-40
-50
-60
Efficiency
38
40
42
44
46
48
50
42
44
46
48
50
52
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet – DRAFT ONLY
3 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA 3GPP Drive-up
Intermodulation Distortion
VDD = 28 V, IDQ = 1.2 A,,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
-25
-15
-25
-35
-45
-55
50
40
30
20
10
3rd Order
Efficiency
-35
-45
-55
-65
5th
7th
ACP Low
ACP Up
41
43
45
47
49
51
53
42
44
46
48
50
Output Power, PEP (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
960 MHz
Single-carrier WCDMA Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
PAR = 7.5:1, BW = 3.84 MHz
20
0
8
6
4
2
0
20
0
60
45
30
15
0
PAR*
PAR*
Efficiency
-20
-40
-60
-20
-40
-60
Gain
ACPR
ACPR
42
44
46
48
50
42
44
46
48
50
Average Output Power (dBm)
Average Output Power (dBm)
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
Data Sheet – DRAFT ONLY 4 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
940 MHz
Single-carrier WCDMA Drive-up
940 MHz
V
DD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
V
DD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
PAR = 7.5:1, BW = 3.84 MHz
20
0
8
6
4
2
0
20
0
60
45
30
15
0
PAR*
PAR*
Efficiency
-20
-40
-60
-20
-40
-60
Gain
ACPR
ACPR
42
44
46
48
50
42
44
46
48
50
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
920 MHz
Single-carrier WCDMA Drive-up
920 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
PAR = 7.5:1, BW = 3.84 MHz
20
60
45
30
15
0
20
0
8
PAR*
0
-20
-40
-60
6
4
2
0
PAR*
Efficiency
-20
-40
-60
Gain
ACPR
ACPR
42
44
46
48
50
42
44
46
48
50
Average Output Power (dBm)
Average Output Power (dBm)
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
Data Sheet – DRAFT ONLY 5 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
Z source (W)
Z Load (W)
MHz
910
920
930
940
950
960
970
R
jX
R
jX
D
2.23
2.23
2.23
2.24
2.25
2.26
2.27
-3.12
-3.03
-2.95
-2.87
-2.80
-2.73
-2.65
1.53
1.52
1.50
1.49
1.46
1.44
1.42
-0.87
-0.84
-0.81
-0.77
-0.74
-0.71
-0.67
Z Source
Z Load
G
S
See next page for Reference Circuit information
Data Sheet – DRAFT ONLY
6 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit
S3
8
7
C804
1000 pF
1
6
5
2
C803
1000 pF
C805
100000 pF
3
4
R803
10 Ohm
R805
10 Ohm
2
1
S2
3
R802
1200 Ohm
C802
100000 pF
S1
2
3
C
1
4
S
B
R804
2000 Ohm
E
C801
1000 pF
R801
1300 Ohm
C101
33 pF
C103
C110
R102
C102
C109
10000 pF
10000 pF
4.7 pF
5100 Ohm
TL101
4710000 pF
R101
10 Ohm
TL131
TL124
TL110
TL109
TL134
TL102
TL127
TL133
TL132
3
3
3
3
3
3
1
2
1
2
1
2
1
2
1
2
1
2
VDD
TL107
TL123
TL135
R103
10 Ohm
C104
56 pF
TL114
TL108
TL118
TL128
1
2
3
TL120
TL104
TL136
TL140
TL121
C106
3.9 pF
C107
56 pF
TL126
TL106
TL130
TL116
TL119
TL141
TL103
TL113
TL111
TL137
2 1
TL129
TL125
TL112
3
3
RF_IN
2
1
1
2
GATE DUT
3
C105
3.3 pF
TL115
C108
1.5 pF
TL117
2
1
εr = 3.48
3
TL139
TL138
H = 20 mil
RO/RO4350B1
TL122 TL142
TL105
Reference circuit input schematic for ƒ = 960 MHz
C201
100000000 pF
C208
10000000 pF
C221
10000000 pF
C222
10000000 pF
C206
10000000 pF
C216
1000000 pF
C223
10000000 pF
TL240
2
TL234
TL207
TL203
TL236
TL220
TL239
2
1
3
3
3
3
3
1
TL238
3
2
1
2
1
2
1
2
1
4
C214
10000 pF
TL218
DRAIN DUT
C215
1 pF
C202
1.2 pF
C205
56 pF
TL235
TL225
TL233
2
TL237
TL210 TL208
TL219
TL209 TL224
TL211
TL217
TL223
TL229
TL221
3
DRAIN DUT
2
1
3
1
DRAIN DUT
1
2
3
4
C210
1 pF
C209
5.6 pF
TL232
TL205
C207
0.2 pF
1
2
3
T
TL231
DRAIN DUT
TL204
TL201
C203
3.9 pF
1
2
3
TL222
TL230 TL227
TL215
C204
TL226
10000 pF
C219
10000000 pF
4
TL206
TL212
C213
TL216
TL214
TL202
TL213
εr = 3.48
2
TL228
3
2
1
2
1
2
1
2
1
1
3
H = 20 mil
3
3
3
3
1
2
RO/RO4350B1
C212
10000000 pF
C217
10000000 pF
C220
10000000 pF
C211
10000000 pF
C218
1000000 pF
100000000 pF
Reference circuit output schematic for ƒ = 960 MHz
Data Sheet – DRAFT ONLY
7 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
DUT
PTFB091507FH
Test Fixture Part No.
PCB
LTN/PTFB091507FH
Rogers RO4350, 0.508 mm [0.020"] thick, 2 oz. copper, r = 3.48
Gerber Files
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
ELectrical Characteristics at 960 MHz
Microstrip
TL102
TL103
TL111
TL114
TL115
TL116
TL117
TL118
TL119
TL120
TL121
TL122
TL123
TL124
TL125
TL126
TL127
TL130
TL134
TL136
TL137
TL138
TL139
TL201
TL202, 207
Characteristics
0.004 , 26.8
0.007 , 39.1
0.004 , 5.3
0.003 , 63.9
0.026 , 51.5
0.036 , 39.1
0.042 , 51.5
0.007 , 63.9
0.035 , 39.1
0.015 , 63.9
0.100 , 63.9
0.005 , 51.5
0.008 , 63.9
0.006 , 26.8
0.102 , 5.3
0.040 , 51.5
0.004 , 26.8
0.011 , 39.1
0.007 , 26.8
0.008 , 63.9
0.016 , 5.3
0.002 , 51.5
0.015 , 51.5
0.004 , 51.5
0.010 , 20.9
Dimensions: mm
W = 2.79, L = 0.76
Dimensions: mils
W = 110, L = 30
W = 1.68, L = 1.27
W = 66, L = 50
W1 = 17.78, W2 = 17.78, W3 = 0.76
W = 0.76, L = 0.51
W1 = 700, W2 = 700, W3 = 30
W = 30, L = 20
W = 1.10, L = 4.88
W = 44, L = 192
W = 1.68, L = 6.74
W = 66, L = 266
W = 1.10, L = 8.00
W = 44, L = 315
W = 0.76, L = 1.27
W = 30, L = 50
W = 1.68, L = 6.49
W = 66, L = 256
W = 0.76, L = 2.92
W = 30, L = 115
W = 0.76, L = 19.05
W = 30, L = 750
W = 1.10, L = 1.02
W = 44, L = 40
W = 0.76, L = 1.52
W = 30, L = 60
W = 2.79, L = 1.04
W = 110, L = 41
W = 17.78, L = 17.55
W = 1.10, L = 7.57
W = 700, L = 691
W = 44, L = 298
W = 2.79, L = 0.76
W = 110, L = 30
W1 = 1.68, W2 = 1.68, W3 = 2.03
W = 2.79, L = 1.19
W1 = 66, W2 = 66, W3 = 80
W = 110, L = 47
W = 0.76, L = 1.52
W = 30, L = 60
W1 = 17.78, W2 = 17.78, W3 = 2.79
W = 1.10, L = 0.33
W1 = 700, W2 = 700, W3 = 110
W = 44, L = 13
W1 = 1.10, W2 = 1.10, W3 = 2.79
W1 = 1.10, W2 = 1.10, W3 = 0.76
W1 = 44, W2 = 44, W3 = 110
W1 = 44, W2 = 44, W3 = 30
W1 = 150, W2 = 72, W3 = 150, W4 = 72
W1 = 3.81, W2 = 1.83, W3 = 3.81,
W4 = 1.83
TL203
TL204
TL205
TL206
TL210
TL211
TL212
TL213
TL214
0.016 , 20.9
0.014 , 51.5
0.015 , 51.5
0.016 , 20.9
0.109 , 5.7
0.016 , 5.7
0.014 , 20.9
0.016 , 20.9
0.007 , 20.9
W1 = 3.81, W2 = 3.81, W3 = 2.79
W = 1.10, L = 2.67
W1 = 150, W2 = 150, W3 = 110
W = 44, L = 105
W1 = 1.10, W2 = 1.10, W3 = 2.79
W1 = 3.81, W2 = 3.81, W3 = 2.79
W = 16.51, L = 18.62
W1 = 44, W2 = 44, W3 = 110
W1 = 150, W2 = 150, W3 = 110
W = 650, L = 733
W1 = 16.51, W2 = 16.51, W3 = 2.79
W = 3.81, L = 2.51
W1 = 650, W2 = 650, W3 = 110
W = 150, L = 99
W1 = 3.81, W2 = 3.81, W3 = 2.79
W1 = 3.81, W2 = 3.81, W3 = 1.27
W1 = 150, W2 = 150, W3 = 110
W1 = 150, W2 = 150, W3 = 50
table continued on next page
Data Sheet – DRAFT ONLY
8 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Microstrip
TL215
Characteristics
0.021 , 20.9
0.041 , 20.9
0.008 , 39.1
0.016 , 16.5
0.011 , 39.1
0.016 , 20.9
0.037 , 5.7
Dimensions: mm
W1 = 3.81, W2 = 3.81, W3 = 3.81
W = 3.81, L = 7.29
Dimensions: mils
W1 = 150, W2 = 150, W3 = 150
TL216
W = 150, L = 287
TL217
W = 1.68, L = 1.52
W = 66, L = 60
TL218
W = 5.08, L = 2.90
W = 200, L = 114
TL219
W = 1.68, L = 2.03
W = 66, L = 80
TL220
W1 = 3.81, W2 = 3.81, W3 = 2.79
W = 16.51, L = 6.38
W1 = 150, W2 = 150, W3 = 110
W = 650, L = 251
TL221
TL222
0.016 , 16.5
0.011 , 5.7
W = 5.08, L = 2.89
W = 200, L = 114
TL223
W1 = 16.51, W2 = 1.83, W3 = 16.51,
W4 = 1.83
W1 = W1, W2 = 72, W3 = 650,
W4 = 72
TL228
TL230
TL231
TL232
TL233
TL234
TL235
TL236
TL237
TL238
TL239
TL240
0.021 , 16.5
0.006 , 51.5
0.060 , 51.5
0.027 , 51.5
0.006 , 51.5
0.041 , 20.9
0.010 , 51.5
0.014 , 20.9
0.052 , 5.7
0.021 , 16.5
0.021 , 20.9
0.007 l, 20.9 W
W1 = 5.08, W2 = 5.08, W3 = 3.81
W = 1.10, L = 1.14
W1 = 200, W2 = 200, W3 = 150
W = 44, L = 45
W = 1.10, L = 11.3
W = 44, L = 445
W = 1.10, L = 5.08
W = 44, L = 200
W = 1.10, L = 1.12
W = 44, L = 44
W = 3.81, L = 7.29
W = 150, L = 287
W1 = 1.10, W2 = 1.10, W3 = 1.91
W = 3.81, L = 2.51
W1 = 44, W2 = 44, W3 = 75
W = 150, L = 99
W = 16.51, L = 8.89
W = 650, L = 350
W1 = 5.08, W2 = 5.08, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 1.27
W1 = 200, W2 = 200, W3 = 150
W1 = 150, W2 = 150, W3 = 150
W1 = 150, W2 = 150, W3 = 50
Data Sheet – DRAFT ONLY
9 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C803
S3
C804 R801
C801
C805
R803
C216
C222
V
DD
C221
C206
S1
C201
C208
C102
C101
C103
R805
C110
C109
R102
C223
C104
C802
C215
R103
C205
C202
C214
C204
RF_IN
RF_OUT
C107
C108
C106
V
DD
C200
C210
C207
C203
C105
C219
C213
C211
C212
C217
C218
C220
PTFB091507_IN_01
R04350, .020
(62)
PTFB091507_IN_01
R04350, .020
(62)
b
091507 f h _C D_ 3- 08 - 11
Reference circuit board layout (not to scale)
Component
C101
Description
Suggested Supplier
ATC
P/N or Comment
ATC100B330JW500XB
Chip capacitor, 33 pF
Chip capacitor, 4.71 µF
Capacitor, 10 nF
C102
Digi-Key
ATC
493-2372-2-ND
C103
ATC200B103MW50XC
ATC100B560JW500XB
C104, C107
C105
Chip capacitor, 56 pF
Chip capacitor, 3.3 pF
Chip capacitor, 3.9 pF
Chip capacitor, 1.5 pF
Capacitor, 10 nF
ATC
ATC
ATC100B3R3CW500XB
ATC100B3R9CW500XB
ATC100B1R5CW500XB
ATC200B103MW50XC
ATC100B4R7CW500XB
PCE4442TR-ND
C106, C203
C108
ATC
ATC
C109
ATC
C110
Chip capacitor, 4.7 pF
Electrolytic cap., 100 uF, 50 V
Chip capacitor, 1.2 pF
Capacitor, 10 nF
ATC
C201, C213
C202
Digi-Key
ATC
ATC100B1R2CW500XB
ATC200B103MW50XC
ATC100B560JW500XB
587-1818-2-ND
C204
ATC
C205
Chip capacitor, 56 pF
Capacitor, 10 µF
ATC
C206, C208, C211,
C212, C217, C220,
C221, C222
Digi-Key
C207
C209
C210
Chip capacitor, 0.2 pF
Chip capacitor, 5.6 pF
Chip capacitor, 1 pF
ATC
ATC
ATC
ATC100B0R2CW500XB
ATC100B5R6CW500XB
ATC100B1R0CW500XB
table continued on next page
Data Sheet – DRAFT ONLY
10 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component
Description
Suggested Supplier
P/N or Comment
C214
Capacitor, 10 nF
Chip capacitor, 1 pF
Chip capacitor, 1 µF
Tantalum capacitor, 10 µF, 35 V
Chip capacitor, 1 nF
Chip capacitor, 100 nF
Resistor, 10
ATC
ATC200B103MW50XC
ATC100B1R0CW500XB
478-3993-2-ND
281M5002106K
PCC1772CT-ND
PCC104BCT-ND
P10ECT-ND
C215
ATC
C216, C218
C219, C223
C801, C803, C804
C802, 805
R101
Digi-Key
Garrett Electronics
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
R102
Resistor, 5.1
P5.1KECT-ND
R103
Resistor, 10
P10ECT-ND
R801
Resistor, 1.3k
Resistor, 1.2k
Resistor, 10
P1.3KGCT-ND
R802
P1.2KGCT-ND
R803, R805
R804
P10ECT-ND
Resistor, 2k
P2.0KECT-ND
S1
Transistor
BCP5616-ND
S2
Potentiometer, 2k
Voltage regulator
3224W-202ECT-ND
LM78L05ACM-ND
S3
See package outline specifications on next page
Data Sheet – DRAFT ONLY
11 of 13
Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
V
D
G
4.889±.510
[.192±.020]
9.779
[.385]
9.398
[.370]
C
L
19.558±.510
[.770±.020]
+.381
4X R0.508
-.127
+.015
R.020
[
-.005
]
2X 12.700
[.500]
+.254
4.039
-.127
22.352±.200
[.880±.008]
+.010
.159
[
]
-.005
C
66065A- 0003- C743- 010- 027 H- 34288- 42_ d. wg
1.575
C
L
[.062] (SPH)
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D - drain; S - source; G - gate; V - V
.
DD
5. Lead thickness: 0.10 +0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
12 of 13
Rev. 03, 2011-03-14
PTFB091507FH V1
Confidential, Limited Internal Distribution
Revision History: 2011-03-14
Data Sheet
Previous Revision: 2010-09-02, Advance Specification
Page
all
Subjects (major changes since last revision)
Characterization completed, product released.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2011-03-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet – DRAFT ONLY
13 of 13
Rev. 03, 2011-03-14
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