PTFB091802FCV1R250 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 â 960 MHz;
| 型号： | PTFB091802FCV1R250 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 â 960 MHz |
| 文件： | 总9页 (文件大小：1198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
PTFB091802FC
Package H-37248-4
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
•ꢀ Broadband internal input and output matching
•ꢀ Dual path design (2 X 90 W)
•ꢀ Typical CW performance at 960 MHz, 28 V
PAR = 10.0 dB, 3.84 MHz BW
- Ouput power @ P
- Efficiency = 56%
- Gain = 18 dB
= 206 W
1dB
24
20
16
12
8
60
40
20
0
Gain
•ꢀ Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
Efficiency
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS-compliant
-20
-40
-60
PAR @ 0.01% CCDF
4
0
ptfb091802fc_g1
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
= 28 V, I = 1400 mA, P = 55 W avg, ƒ =920 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
1
2
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
18
Typ
19.5
34
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
32
—
%
Adjancent Channel Power Ratio
ACPR
—
–35
–33
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
W
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
V
GS
= 10 V, V = 0.1 V
R
—
0.15
3.9
—
DS
DS(on)
V
= 28 V, I
= 1400 mA
V
GS
2.5
4.5
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
200
V
T
°C
J
T
STG
–40 to +150
0.38
°C
Thermal Resistance (T
= 70°C, 190 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
PTFB091802FC V1 R0
PTFB091802FC V1 R250
PTFB091802FCV1R0XTMA1
PTFB091802FCV1R250XTMA1
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 920-960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-20
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
ACPU
ACPL
Efficiecy
-25
-30
-35
-40
-45
-50
-55
960MHz ACPU
960MHz ACPL
940MHz ACPU
940MHz ACPL
920MHz ACPU
920MHz ACPL
ptfb091802fc_g2
ptfb091802fc_g3
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
CW Performance
at various VDD
CW Performance
VDD = 28 V, IDQ = 1400mA
IDQ = 1400 mA, ƒ = 960 MHz
960MHz Gain
940MHz Gain
920MHz Gain
960MHz Eff
940MHz Eff
920MHz Eff
24V Gain
28V Gain
32V Gain
24V Eff
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
28V Eff
Gain
Efficiency
0
ptfb091802fc_g5
ptfb091802fc_g4
27
31
35
39
43
47
51
55
29
33
37
41
45
49
53
57
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 1400 mA
20
18
16
14
12
0
Gain
IRL
-5
-10
-15
-20
ptfb091802fc_g6
750 800 850 900 950 1000 1050 1100
Frequency (MHz)
Load Pull Performance
Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I
= 1400 mA
DQ
P
1dB
Max Output Power
Max Drain Efficiency
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
[dB]
P
P
Gain
[dB]
P
P
OUT
[W]
hD
hD
OUT
OUT
OUT
[dBm]
[W]
127
110
109
[dBm]
[%]
[%]
920
942
960
3.48 – j4.93
4.17 – j5.32
4.61 – j5.47
1.95 – j1.75
1.93 – j1.59
1.86 – j1.64
17.2
18.3
18.3
51.1
55.1
56.0
56.2
4.47 – j0.46
4.77 + j0.06
4.23 – j0.33
20.2
20.8
20.6
48.9
77
71.0
66.4
66.9
50.4
47.8
60
50.4
48.2
65
Data Sheet
4 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Reference Circuit , 920 – 960 MHz
RO4350, .020
(62)
RO4350, .020
(62)
VDD
R801
C804
R802
C801
C802
C805
R803
S1
S3
C203
C214
VDD
C803
C101 C106 C105 R102
R101
R805
S2
R804
C107
R103
C109
C202 C206 C205
C216
C104 C110
C215
C102
RF_IN
C212
C211
RF_OUT
C204
C103
C201 C208 C207 C209
C108
C210
C213
PTB091802FC_IN_01
PTB091802FC_OUT_01
p
t f b 0 9 1 8 0 2 f c _ C D _ 0 3 - 2 6 - 2 0 1 5
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTFB091802FC V1
Test Fixture Part No.
PCB
LTN/PTFB091802FC V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 920 – 960 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Inform
Component
Input
Description
Manufacturer
P/N
C101
Capacitor, 33 pF
CAPACITOR, 56 pF
CAPACITOR, 2.6 pF
CAPACITOR, 4.7 pF
Tantalum Capacitor, 4.7 µF
Capacitor, 20000 pF
Capacitor, 3.9 pF
Capacitor, 10000 pF
Capacitor, 1000 pF
Capacitor, 0.1 µF
Resistor, 220 W
ATC
ATC100B330JW500XB
ATC100B560JW500XB
ATC100B2R6CW500XB
ATC100B4R7CW500XB
F931C475MAA
C102, C107
C103
ATC
ATC
C104
ATC
C105
AVX Corporation
C106
ATC
ATC200B203MC
ATC100B3R9CW500XB
ATC200B103MC
ECJ-1VB1H102K
ECJ-3VB1H104
C108, C109
C110
ATC
ATC
C801, C802, C804
C803, C805
R101, R102
R103, R803, R805
R801
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technologies
Bourns Inc.
ERJ-8GEYJ221V
ERJ-8GEYJ100V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
ERJ-8GEYJ202V
BCP56
Resistor, 10 W
Resistor, 1300 W
Resistor, 1200 W
Resistor, 2000 W
Transistor
R802
R804
S1
S2
Potentiometer, 2k W
Voltage Regulator
3224W-1-202E
S3
Texas Instruments
LM78L05ACM
Output
C201, C202, C206,
C208
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C203, C212, C213
C204
Capacitor, 56 pF
Capacitor, 2.2 pF
Capacitor, 4.7 µF
ATC
ATC100B560JW500XB
ATC100B2R2CW500XB
GRM32ER71H475KA88
ATC
C205, C207, C209,
C216
Murata Electronics North America
C210, C214
C211
Capacitor, 100 µF
Capacitor, 1.5 pF
Capacitor, 1.7 pF
Panasonic Electronic Components
EEE-FP1V101AP
ATC
ATC
ATC100B1R5CW500XB
ATC100B1R7CW500XB
C215
Data Sheet
6 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Pinout Diagram (top view)
S
D1
D2
G2
Pin Description
D1 Drain device 1
D2 Drain device 2
G1 Gate device 1
G2 Gate device 2
S Source (flange)
H-37248-4_pd_10-10-2012
G1
Lead connections for PTFB091802FC
Data Sheet
7 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
C
L
+0.13
-0.38
4X R0.76
2X 4.83±0.51
[.190±0.020]
D1
D2
+0.005
-0.015
R.030
[
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
C
L
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
H-37248-4_po_02_01-09-2013
[
3.76±0.25
[.148±0.010]
C
L
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 02.1, 2016-06-10
PTFB091802FC V1
Revision History
Revision
Date
Data Sheet Type
Advance
Page
Subjects (major changes since last revision)
01
02
2014-07-22
2015-03-27
All
Data Sheet reflects advance specification for product development
Production
All
All
Data Sheet reflects released product specification
Revised all data and includes updated final specs, typical performance graphs, loadpull, refer-
ence circuit, package outline
02.1
2016-06-10
Production
2
Updated ordering code to R0
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-10
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 02.1, 2016-06-10
相关型号：
PTFB091802FCV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 â 960 MHz
INFINEON
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