PTFB093608FV [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET;
| 型号： | PTFB093608FV |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET |
| 文件： | 总13页 (文件大小：1107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB093608FV
Thermally-Enhanced High Power RF LDMOS FET
360 W, 28 V, 920 – 960 MHz
Description
PTFB093608FV
Package H-34275G-6/2
The PTFB093608FV is a 360 LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Features
Two-carrier WCDMA3GPP Drive Up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
•
•
Broadband internal matching
Enhanced for use in DPD error correction systems
and Doherty applications
10 MHz carrier spacing, BW 3.84 MHz
•
•
Wide video bandwidth
21.0
20.5
20.0
19.5
19.0
18.5
18.0
60
50
40
30
20
10
0
Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 160 W
- Gain = 19 dB
Gain
- Efficiency = 40%
•
•
•
Integrated ESD protection
Low thermal resistance
Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB input overdrive = 500 W (CW) output power
Efficiency
45
•
Pb-Free and RoHS compliant
35
40
50
55
Output Power Avg. (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
= 28 V, I = 2.8 A, P = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
V
DD
DQ
OUT
0.01% CCDF probability
Characteristic
Symbol
Min
18
Typ
20
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
33.5
—
34
—
%
Adjacent Channel Power Ratio
ACPR
–36
–31
dBc
All published data at T = 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 13
Rev. 04, 2012-07-24
PTFB093608FV
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test–verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
= 2.8 A, P = 315 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
—
Typ
20
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
42
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1.0
10.0
—
µA
µA
W
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
GS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
0.05
3.9
—
DS
V
= 28 V, I
= 2.8 A
V
GS
2.5
—
4.5
1.0
V
DS
DQ
V
GS
= 10 V, V = 0 V
I
GSS
µA
DS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
200
V
T
°C
J
T
STG
–40 to +150
0.12
°C
Thermal Resistance (T
= 70°C, 360 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
PTFB093608FV V2
Order Code
Package and Description
H-34275G-6/2, earless flange
H-34275G-6/2, earless flange
Shipping
PTFB093608FVV2XWSA1
PTFB093608FVV2R250XTMA1
Tray
PTFB093608FV V2 R250
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMABroadband
Gain & Return Loss vs. Frequency
VDD = 28 V, IDQ = 2.8 A, POUT = 100 W
Single-carrier WCDMABroadband
Efficiency& ACPR vs. Frequency
VDD = 28 V, IDQ = 2.8 A, POUT = 100 W
21
20
19
18
0
42
37
32
27
22
-20
-25
-30
-35
-40
Gain
Efficiency
ACPU
-10
-20
-30
IRL
860 880 900 920 940 960 980 1000 1020
Frequency (MHz)
860
880
900
920
940
960
980 1000
Frequency (MHz)
Single-carrier WCDMA3GPP Drive-up
Single-carrier WCDMA3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
V
= 28 V, I = 2.8 A, ƒ = 960 MHz
DD
DQ
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
24
20
16
12
8
60
40
20
0
-20
-30
-40
-50
-60
-70
50
Gain
40
30
20
10
0
Efficiency
ACP Low
PAR @ .01% CCDF
ACP Low
-20
-40
-60
ACP Up
Efficiency
46
4
0
34
38
42
50
54
36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Output Power Avg. (dBm)
Data Sheet
3 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Typical Performance (cont.)
Two-carrier WCDMA3GPP Drive-up
Two-carrier WCDMA3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
-20
-30
-40
-50
-60
50
40
30
20
10
0
-20
-25
-30
-35
-40
-45
-50
-55
960 Lower
960 Upper
940 Lower
940 Upper
920 Lower
920 Upper
Efficiency
IMD Up
IMD Low
ACPR
IMD Low
IMD Up
36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
35
40
45
50
55
Output Power Avg. (dBm)
Broadband Circuit Impedance
Z Source
Z Load
D
S
D
G
G
Frequency
MHz
910
Z Source W
Z Load W
R
jX
R
jX
1.84
1.78
1.72
1.66
1.61
1.55
1.50
–1.74
–1.73
–1.72
–1.71
–1.69
–1.66
–1.64
0.89
0.86
0.83
0.81
0.79
0.77
0.75
–1.52
–1.46
–1.40
–1.35
–1.29
–1.23
–1.17
920
930
940
950
960
970
Data Sheet
4 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Alternative Peak-tune Load Pull Characteristics
Power Sweep, under Pulsed Conditions
VDD=28 VDC, IDQ= 1400 mA, Pulsed CW, 12 µsec,
10% Duty Cycle, single side measurement
55
53
51
49
47
45
43
960 MHz
940 MHz
920 MHz
24
26
28
30
32
34
36
38
Input Power (dBm)
Frequency
P
1dB
MHz
920
940
960
dBm
W
53.95
53.80
53.58
248
240
228
Impedance at P
1dB
Frequency
Z Source W
Z Load W
MHz
920
940
960
R
jX
R
jX
3.76
4.99
4.72
–2.08
–2.64
–2.70
1.35
1.27
1.22
–2.42
–2.48
–2.42
Note: Load pull test fixture tuned for peak P
Measurement on single side.
output power at 28 V.
1dB
Data Sheet
5 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit
S3
8
7
C803
1000 pF
1
2
6
5
C801
3
4
R803
1000 pF
1000 Ohm
R805
C804
10000 pF
1200 Ohm
2
3
C
S1
4
S
1
2
S2
B
3
E
R804
1300 Ohm
C802
1000 pF
R802
2000 Ohm
1
R801
0 Ohm
R104
0 Ohm
R103
0 Ohm
TL109
TL136
TL132
TL133
TL134
TL135
TL131
1
2
1
2
1
2
3
3
3
C112
10000 pF
C113
56 pF
R102
10 Ohm
TL161
TL162 TL112
C103
2.7 pF
TL115
TL102
1
2
3
TL114
TL116
TL118
TL110
C107
2.7 pF
C106
3.9 pF
TL113
TL163
TL119
TL105
TL107
TL126
TL124
TL125
TL122
TL121
TL101
TL160
TL108
TL123
TL127
TL117
3
3
3
GATE DUT
(Pin G1)
1
2
2
1
2
1
1
2
2
1
3
3
C105
56 pF
R101
22 Ohm
TL106
TL167
TL166
TL111
2
1
3
1
2
RF_IN
3
4
C101
1.8 pF
C104
56 pF
TL130
TL159
TL156
TL154
TL153
TL103
TL142
TL150
TL139
TL151
TL168 TL128
TL144
TL152
TL140
TL143
3
3
GATE DUT
(Pin G2)
2
1
2
1
2
1
2
1
2
1
3
3
3
C111
2.7 pF
C110
3.9 pF
TL129
TL104
TL149
TL141
C102
2.7 pF
TL155
1
2
3
TL148
TL158
TL157
TL120
R107
10 Ohm
R105
0 Ohm
C114
4710000 pF
R106
0 Ohm
er = 3.48
TL138
TL145
TL165
TL146
TL164
TL147
TL137
3
H = 20 mil
1
2
1
2
1
2
b
0 9 3 6 0 8 f v _ b d i n _ 0 6 - 2 2 - 2 0 1 1
3
3
C108
10000 pF
C109
56 pF
RO/RO4350B1
Reference circuit input schematic for ƒ = 960 MHz
Data Sheet
6 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit (cont.)
C217
4710000 pF
C216
4710000 pF
C218
C219
C215
100000000 pF
10000000 pF
10000000 pF
TL241
TL238
TL237
TL240
TL236
TL239
TL223
2
1
3
3
3
3
3
1
2
1
2
1
2
1
2
TL224
TL225
DCVS
V1
C202
1.8 pF
3
1
2
TL261
TL262
TL244
TL245
TL233
C221
2.2 pF
2
1
TL212
TL263
3
C209
4.7 pF
C207
3.3 pF
TL213
TL260
TL221 TL226
TL234
TL214
TL231
TL208
TL207
TL209
TL230
DRAIN DUT
(Pin D1)
TL227
TL211
TL220
TL253
3
3
1
2
1
2
2
1
3
C205
56 pF
TL201
TL210
2
2
TL202
3
1
3
1
RF_OUT
4
4
C201
3.3 pF
C206
56 pF
TL206
TL203
TL204
TL205
TL215
TL216
TL229
TL232
TL228
TL219
TL217
TL264
TL258
TL254
DRAIN DUT
(Pin D2)
3
1
2
1
2
1
2
3
3
C222
4.7 pF
C208
3.3 pF
TL243
C220
2.2 pF
TL242
TL218
2
1
3
TL255
TL256
TL259
TL251
TL257
2
1
3
C204
1.8 pF
TL235
TL250
TL249
TL248
TL222
TL246
TL247
TL252
1
3
2
er = 3.48
1
2
1
2
1
2
1
2
b
0 9 3 6 0 8 f v _ b d o u t _ 0 6 - 2 2 - 2 0 1 1
3
3
3
3
H = 20 mil
C210
4710000 pF
DCVS
V2
C211
4710000 pF
C212
100000000 pF
C213
10000000 pF
C214
10000000 pF
RO/RO4350B1
Reference circuit output schematic for ƒ = 960 MHz
Data Sheet
7 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit (cont.)
Description
DUT
PTFB093608FV
0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper
PCB
Electrical Characteristics at 960 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Input
TL101, TL103, TL122,
TL143
W1 = 0.013, W2 = 0.013, W3 = 0.002
W1 = 13, W2 = 520, W3 = 60
TL102, TL104
TL105, TL130
TL106
0.001 λ, 51.98 W
0.005 λ, 51.98 W
0.034 λ, 51.98 W
0.000 λ, 51.98 W
0.034 λ, 51.98 W
0.006 λ, 34.08 W
0.042 λ, 51.98 W
W1 = 1.087, W2 = 1.087, W3 = 0.127
W = 1.087, L = 0.914
W1 = 43, W2 = 43, W3 = 5
W = 43, L = 36
W = 1.087, L = 6.431
W = 43, L = 253
TL107, TL128
TL108, TL154
TL109, TL147
TL110, TL155
TL111
W1 = 1.087, W2 = 1.087, W3 = 0.025
W = 1.087, L = 6.342
W1 = 43, W2 = 43, W3 = 1
W = 43, L = 250
W = 2.032, L = 1.016
W = 80, L = 40
W = 1.087, L = 8.026
W = 43, L = 316
W1 = 1.087, W2 = 1.829, W3 = 1.087,
W4 = 1.829
W1 = 43, W2 = 72, W3 = 43,
W4 = 72
TL112
0.013 λ, 51.98 W
0.033 λ, 51.98 W
W = 1.087, L = 2.543
W = 43, L = 100
TL113, TL129
TL114, TL141
TL115, TL148
TL116, TL149
TL117, TL150
TL118, TL142
TL119, TL168
TL120
W = 1.087, L = 6.198
W = 43, L = 244
W1 = 0.508, W2 = 2.896
W1 = 20, W2 = 114
0.011 λ, 26.07 W
0.026 λ, 78.27 W
0.024 λ, 7.03 W
W = 2.896, L = 2.032
W = 114, L = 80
W = 0.508, L = 5.080
W = 20, L = 200
W = 13.208, L = 4.064
W = 520, L = 160
W1 = 0.013, W2 = 0.013, W3 = 0.001
W = 1.087, L = 1.143
W1 = 13, W2 = 520, W3 = 20
W = 43, L = 45
0.006 λ, 51.98 W
0.013 λ, 51.98 W
0.015 λ, 7.03 W
W = 1.087, L = 2.550
W = 43, L = 100
TL121, TL151
TL123, TL139
TL124, TL144
TL125, TL152
TL126
W = 13.208, L = 2.591
W = 520, L = 102
W1 = 0.003, W2 = 0.013, Offset = 0.005
W1 = 0.003, W2 = 0.003, W3 = 0.003
W = 13.208, L = 16.434
W1 = 3, W2 = 520, Offset = 192
W1 = 3, W2 = 137, W3 = 110
W = 520, L = 647
0.095 λ, 7.03 W
W1 = 0.001, W2 = 0.003, Offset = 0.001
W = 3.467, L = 7.356
W1 = 1, W2 = 137, Offset = 47
W = 137, L = 290
TL127, TL153
TL131, TL132
TL133, TL138
TL134
0.041 λ, 22.60 W
0.010 λ, 19.85 W
W1 = 4.064, W2 = 4.064, W3 = 1.778
W1 = 0.002, W2 = 0.004, Offset = -0.001
W = 2.032, L = 2.540
W1 = 160, W2 = 160, W3 = 70
W1 = 2, W2 = 160, Offset = -40
W = 80, L = 100
0.014 λ, 34.08 W
0.092 λ, 34.08 W
0.016 λ, 34.08 W
TL135, TL146
TL136, TL137
TL140
W = 2.032, L = 17.018
W = 80, L = 670
W1 = 2.032, W2 = 2.032, W3 = 2.896
W1 = 0.001, W2 = 0.003, Offset = 0.001
W = 4.318, L = 2.540
W1 = 80, W2 = 80, W3 = 114
W1 = 1, W2 = 137, Offset = 47
W = 170, L = 100
TL145
0.014 λ, 18.88 W
table continued on page 9
Data Sheet
8 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit (cont.)
Electrical Characteristics at 960 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Input
TL156, TL157, TL158,
TL159, TL160, TL161,
TL162, TL163
W = 1.087
W = 43
TL164, TL165
TL166
0.010 λ, 18.88 W
0.086 λ, 51.98 W
0.015 λ, 51.98 W
W1 = 4.318, W2 = 4.318, W3 = 1.778
W = 1.087, L = 16.208
W1 = 170, W2 = 170, W3 = 70
W = 43, L = 638
TL167
W1 = 1.087, W2 = 1.087, W3 = 2.794
W1 = 43, W2 = 43, W3 = 110
Output
TL201
W1 = 1.087, W2 = 2.794, W3 = 1.087
W4 = 2.794
W1 = 43, W2 = 110, W3 = 43,
W4 = 110
TL202
W1 = 1.087, W2 = 1.829, W3 = 1.087
W4 = 1.829
W1 = 43, W2 = 72, W3 = 43,
W4 = 72
TL203, TL204, TL226
TL205, TL221
TL206, TL214
TL207
W1 = 0.013, W2 = 0.013, W3 = 0.002
W = 13.208, L = 5.385
W1 = 13, W2 = 520, W3 = 70
W = 520, L = 212
0.031 λ, 7.03 W
0.101 λ, 7.03 W
0.034 λ, 51.98 W
0.056 λ, 22.60 W
0.003 λ, 7.03 W
0.056 λ, 51.98 W
0.005 λ, 51.98 W
0.033 λ, 51.98 W
0.006 λ, 51.98 W
0.034 λ, 51.98 W
0.033 λ, 51.98 W
0.005 λ, 51.98 W
0.005 λ, 51.98 W
0.006 λ, 20.93 W
0.003 λ, 20.93 W
0.021 λ, 20.93 W
0.037 λ, 20.93 W
0.001 λ, 51.98 W
W = 13.208, L = 17.399
W = 520, L = 685
W = 1.087, L = 6.350
W = 43, L = 250
TL208, TL216
TL209, TL215
TL210
W = 3.467, L = 10.150
W = 137, L = 400
W = 13.208, L = 0.559
W = 520, L = 22
W = 1.087, L = 10.643
W = 43, L = 419
TL211
W = 1.087, L = 0.927
W = 43, L = 37
TL212
W = 1.087, L = 6.327
W = 43, L = 249
TL213, TL243
TL217
W = 1.087, L = 1.156
W = 43, L = 46
W = 1.087, L = 6.342
W = 43, L = 250
TL218
W = 1.087, L = 6.322
W = 43, L = 249
TL219
W = 1.087, L = 0.927
W = 43, L = 37
TL220, TL254
TL222, TL241
TL223, TL249
TL224, TL250
TL225, TL235
TL227, TL228
TL229, TL231
TL230, TL232
W = 1.087, L = 1.016
W = 43, L = 40
W = 3.810, L = 1.016
W = 150, L = 40
W1 = 3.810, W2 = 3.810, W3 = 0.508
W1 = 3.810, W2 = 3.810, W3 = 3.810
W = 3.810, L = 6.604
W1 = 150, W2 = 150, W3 = 20
W1 = 150, W2 = 150, W3 = 150
W = 150, L = 260
W1 = 1.087, W2 = 1.087, W3 = 0.127
W1 = 0.013, W2 = 0.003, Offset = 0.005
W1 = 0.003, W2 = 0.001, Offset = 0.001
W1 = 0.001, W2 = 0.001, W3 = 0.003
W1 = 43, W2 = 43, W3 = 5
W1 = 13, W2 = 137, Offset = 192
W1 = 3, W2 = 43, Offset = 47
W1 = 1, W2 = 43, W3 = 120
TL233, TL242, TL244,
TL256
TL234
W1 = 0.013, W2 = 0.013, W3 = 0.002
W = 3.810, L = 7.112
W1 = 13, W2 = 520, W3 = 70
W = 150, L = 280
TL236, TL251
TL237, TL246
0.040 λ, 20.93 W
0.028 λ, 20.93 W
W1 = 3.810, W2 = 3.810, W3 = 5.080
W1 = 150, W2 = 150, W3 = 200
table continued on page 10
Data Sheet
9 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit (cont.)
Electrical Characteristics at 960 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Output
TL238, TL252
TL239, TL247
TL240, TL248
TL245
0.011 λ, 20.93 W
0.014 λ, 20.93 W
0.011 λ, 20.93 W
0.020 λ, 51.98 W
0.064 λ, 51.98 W
0.020 λ, 51.98 W
W = 3.810, L = 2.032
W = 150, L = 80
W1 = 3.810, W2 = 3.810, W3 = 2.540
W1 = 3.810, W2 = 3.810, W3 = 2.032
W = 1.087, L = 3.825
W1 = 150, W2 = 150, W3 = 100
W1 = 150, W2 = 150, W3 = 80
W = 43, L = 151
TL253
W = 1.087, L = 11.996
W = 1.087, L = 3.820
W = 43, L = 472
TL255
W = 43, L = 150
TL257, TL258, TL259,
TL260, TL261, TL262,
TL263, TL264
W = 1.087
W = 43
Circuit Assembly Information
Test Fixture Part No.
LTN/PTFB093608FV
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
C801
C803
S3
VDD
R803
C802
R804
R805
C804
C218 C217
C219 C216
S1
S2
R802
VDD
R801
R103
R104
100 µF
C215
C106
R102
C209
C207
C112 C113
C202
C103
C107
C221
C105
C104
C205
C206
R101
RF_IN
RF_OUT
C201
C101
C220
C111
C102
C204
C110
C222
C208
100 µF
C114
VDD
R105
C212
C108
C109
R106
R107
C214
C210
C213 C211
PTFB093608_IN_01
RO4350, .020
(63)
PTFB093608_OUT_01
RO4350, .020
(63)
b
0 9 3 6 0 8 f v _ C D _ 0 6 - 2 2 - 2 0 1 1
Reference circuit assembly diagram (not to scale)
Data Sheet
10 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Reference Circuit (cont.)
Components Information
Component
Input
Description
Suggested Manufacturer
P/N
C101
Chip capacitor, 1.8 pF
Chip capacitor, 2.7 pF
Chip capacitor, 56 pF
Chip capacitor, 3.9 pF
Chip capacitor, 2.7 pF
Chip capacitor, 10000 pF
Chip capacitor, 4.71 µF
Chip capacitor, 1000 pF
Resistor, 22 W
ATC
ATC100B1R8BW500XB
ATC100B2R7BW500XB
ATC100B560JW500XB
ATC100B3R9CW500XB
ATC100B2R7CW500XB
ATC200B103MW
493-2372-2-ND
C102, C103
C104, C105, C109, C113
C106, C110
C107, C111
C108, C112, C804
C114
ATC
ATC
ATC
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
C801, C802, C803
R101
PCC1772CT-ND
P22ECT-ND
R102, R107
Resistor, 10 W
P10ECT-ND
R103, R104, R105, R106,
R801
Resistor, 0 W
P0ECT-ND
R802
R803
R804
R805
S1
Resistor, 2000 W
Resistor, 1000 W
Resistor, 1300 W
Resistor, 1200 W
Potentiometer, 2k W
Transistor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
P2.0KECT-ND
P1.0KECT-ND
P1.3KGCT-ND
P1.2KGCT-ND
3224W-202ECT-ND
BCP56-ND
S2
S3
Voltage Regulator
LM78L05ACM-ND
Output
C201
Chip capacitor, 3.3 pF
Chip capacitor, 1.8 pF
Chip capacitor, 2.2 pF
Chip capacitor, 56 pF
Chip capacitor, 3.3 pF
Chip capacitor, 4.7 pF
Chip capacitor, 4.71 µF
Capacitor, 100 µF
ATC
ATC100B3R3BW500XB
ATC100B1R8BW500XB
ATC100B2R2BW500XB
ATC100B560JW500XB
ATC100B3R3BW500XB
ATC100B4R7BW500XB
490-1864-2-ND
C202, C204
ATC
C220, C221
ATC
C205, C206
ATC
C207, C208
ATC
C209, C222
ATC
C210, C211, C216, C217
C212, C215
Digi-Key
Digi-Key
Digi-Key
PCE4442TR-ND
C213, C214, C218, C219
Capacitor, 10 µF
587-1818-2-ND
Pinout Diagram (top view)
V1
V2
Pin
Description
D1
D2
G2
V1
V2
D1
D2
G1
G2
S
V
V
device 1
device 2
DD
DD
Drain device 1
Drain device 2
Gate device 1
Gate device 2
Source (flange)
S = flange
G1
H-37275G-6-2_pd_07-24-2012
Data Sheet
11 of 13
Rev. 04, 2012-07-24
PTFB093608FV
Package Outline Specifications
Package H-34275G-6/2
30.61
[1.205]
(13.72
[.540])
2X 2.22
[.087]
D
2X
45° x .64
[.025]
2X (1.27
[.050])
2X 2.29
[.090]
2X 30°
C
L
6X 4.04±0.51
V2
D1
G1
D2
G2
V1
[.159±.020]
10.16
[.400]
(18.24
[.718])
C
L
+.38
-.13
4X R0.51
C
C
L
L
+.015
-.005
R.020
[
]
4X 12.45
[.490]
2X 26.16
[1.030]
+0.25
-0.13
4.57
+.010
.180
[
]
-.005
31.24±0.28
[1.230±.011]
SPH 2.134
[.084]
C
L
1.63
[0.064]
H-34275G-6/2_sl_po_07-24-2012
32.26
[1.270]
S
Diagram Notes—unless otherwise specified:
1.
2.
3.
4.
5.
6.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
Primary dimensions are mm. Alternate dimensions are inches.
All tolerances 0.127 [0.005] unless specified otherwise.
Pins: G1, G2 = gate; D1, D2 = drain; S = source; V1, V2 = V
DD
Lead thickness: 0.13 +0.051/–0.025 mm [.005 +.002/–.001 inch].
Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 04, 2012-07-24
PTFB093608FV V2
Revision History:
2012-07-24
Data Sheet
Previous Version:
2011-09-06, Data Sheet
Page
All
Subjects (major changes since last revision)
Updated from V1 to V2, updated package
Added order code in ordering information table
2
1, 2, 10, 11, 12 Updated package and package related drawings
We Listen toYour Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
Edition 2012-07-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
13 of 13
Rev. 04, 2012-07-24
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