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PTFB193404F [INFINEON]

Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz; 热增强型高功率射频LDMOS FET的340 W， 30 V ， 1930-1990兆赫
PTFB193404F
元器件型号： PTFB193404F
生产厂家： INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用：

Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
热增强型高功率射频LDMOS FET的340 W， 30 V ， 1930-1990兆赫

射频
PDF文件： 总14页 (文件大小：244K)
下载文档：  下载PDF数据表文档文件
型号参数：PTFB193404F参数
 查看货源

PTFB193404F_16

 Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

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0 INFINEON

PTFB193404FV1

 RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN

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0 INFINEON

PTFB193404FV1R0

 Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

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0 INFINEON

PTFB193404FV1R0XTMA1

 Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

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0 INFINEON

PTFB193404FV1R250

 RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN

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0 INFINEON

PTFB193404FV1R250XTMA1

 RF Power Field-Effect Transistor,

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0 INFINEON

PTFB193408SVV1XWSA1

 RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 INFINEON

PTFB201402FC

 High Power RF LDMOS Field Effect Transistor

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0 INFINEON

PTFB201402FC

 High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

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0 CREE

PTFB201402FCV1

 RF Power Field-Effect Transistor,

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-
0 INFINEON

PTFB201402FCV1R0

 High Power RF LDMOS Field Effect Transistor

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-
0 INFINEON

PTFB201402FCV1R0XTMA1

 RF Power Field-Effect Transistor,

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-
0 INFINEON

PTFB201402FCV1R250

 RF Power Field-Effect Transistor,

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-
0 INFINEON

PTFB201402FCV1R250XTMA1

 RF Power Field-Effect Transistor,

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0 INFINEON

PTFB210801FA

 Thermally-Enhanced High Power RF LDMOS FET

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0 INFINEON
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