PTFB201402FC [CREE]
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz;
| 型号： | PTFB201402FC |
| 厂家： | 
CREE, INC |
| 描述： | High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz |
| 文件： | 总14页 (文件大小：595K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
PTFB201402FC-140W
RF Power Field-Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1R0
High Power RF LDMOS Field Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1R0XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1R250
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1R250XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB201402FCV1XWSA1
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 â 2170 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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0
CREE
PTFB210801FAV1R0
Thermally-Enhanced High Power RF LDMOS FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB210801FAV1R0XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
PTFB210801FAV1R250
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37265-2, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB210801FAV1R250XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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2
INFINEON
PTFB211501E
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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24
INFINEON
PTFB211501EF
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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0
INFINEON
PTFB211501EV1R0
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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PTFB211501EV1R0XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
PTFB211501EV1R250
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
PTFB211501EV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
PTFB211501EV4
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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INFINEON
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