PTFB211501EV1R250XTMA1 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs;
| 型号： | PTFB211501EV1R250XTMA1 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs |
| 文件： | 总13页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB211501E
PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 – 2170 frequency band. Features include
I/O matching, high gain, and thermally-enhanced ceramic open-cavity
packages with slotted and earless flanges.
PTFB211501E
Package H-36248-2
PTFB211501F
Package H-37248-2
Features
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
•
•
Broadband internal matching
Typical single-carrier WCDMA performance at
2170 MHz, 30 V, I = 1.2 A, 3GPP signal, channel
DQ
-25
-30
-35
-40
-45
-50
-55
60
50
40
30
20
10
0
bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = –34 dBc
Efficiency
•
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
ACP Low
•
•
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
ACP Up
Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Pb-Free and RoHS compliant
RF Characteristics
Single-carrierWCDMA Measurements (tested in Infineon test fixture)
= 30 V, I = 1.2 A, P = 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB
V
DD
DQ
OUT
@ 0.01% CCDF
Characteristic
Gain
Symbol
Min
17
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
IMD
27
32
—
%
Intermodulation Distortion
—
–34
–32
dBc
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
RF Characteristics (cont.)
Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 30 V, I
= 1.2 A, P = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
DQ
OUT
Characteristic
Gain
Symbol
Min
—
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
40
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
V
DS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 63 V, V
= 0 V
= 0 V
I
—
1.0
10.0
—
µA
µA
W
GS
GS
DSS
DSS
I
—
—
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
= 10 V, V = 0.1 V
R
DS(on)
—
0.08
2.1
—
DS
= 30 V, I
= 1.2 A
V
GS
1.6
—
3.0
1.0
V
DQ
= 10 V, V = 0 V
I
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
200
V
T
J
°C
T
STG
–40 to +150
0.29
°C
Thermal Resistance (T
= 70°C, 150 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type andVersion
Ordering Code
Package Description
Shipping
PTFB211501E V1 R0
PTFB211501EV1R0XTMA1
H-36248-2, bolt-down
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50pcs
Tape & Reel, 250 pcs
PTFB211501E V1 R250 PTFB211501EV1R250XTMA1 H-36248-2, bolt-down
PTFB211501F V1 R0 PTFB211501FV1R0XTMA1 H-37248-2, earless flange
PTFB211501F V1 R250 PTFB211501FV1R250XTMA1 H-37248-2, earless flange
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Typical Performance (data taken in production test fixture)
Single-carrier WCDMA, 3GPP Broadband
Two-tone Broadband
VDD = 30 V, IDQ = 1.20 A, POUT = 40 W
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
50
45
40
35
30
25
20
15
-10
-15
-20
-25
-30
-35
-40
-45
55
50
45
40
35
30
25
20
15
-10
-15
-20
-25
-30
-35
-40
-45
-50
IRL
IRL
Efficiency
IMD3
Gain
Efficiency
ACP
Gain
2080 2100 2120 2140 2160 2180 2200
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Frequency (MHz)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
19
18
17
16
15
50
-10
55
45
35
25
15
5
40
30
20
10
0
-20
-30
-40
-50
-60
Efficiency
Gain
IMD3
Efficiency
40
42
44
46
48
50
52
54
40
42
44
46
48
50
52
54
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Typical Performance (cont.)
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-tone Drive-up
at Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz
20
19
18
17
16
15
65
55
45
35
25
15
-20
2170 MHz
2140 MHz
-30
2110 MHz
Gain
-40
-50
-60
Efficiency
41
43
45
47
49
51
53
41
43
45
47
49
51
53
Output Power (dBm)
Output Power, PEP (dBm)
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 2170 MHz
CW Performance
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
19
18
17
16
19
18
17
16
15
14
60
50
40
30
20
10
IDQ = 1.40 A
Gain
IDQ = 1.20 A
IDQ = 0.80 A
+25°C
+85°C
–10°C
Efficiency
42 43 44 45 46 47 48 49 50 51 52
Output Power (dBm)
41
43
45
47
49
51
53
Output Power (dBm)
Data Sheet
4 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Typical Performance (cont.)
Bias Voltage vs. Temperature
Intermodulation Distortion
Voltage normalized to typical gate voltage,
vs. Output Power
VDD = 30 V, IDQ = 1.20 A,
series show current
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
1.03
1.02
1.01
1
-20
-30
-40
-50
-60
3rd Order
2 A
5th
4 A
8 A
10 A
12 A
14 A
16 A
0.99
0.98
0.97
7th
-20
0
20
40
60
80
100
40
45
50
55
Case Temperature (°C)
Output Power, PEP (dBm)
Broadband Circuit Impedance
Z0 = 50 W
D
Z Source
Z Load
G
Z Load
S
2080 MHz
2200 MHz
Frequency
MHz
Z Source W
Z Load W
R
jX
R
jX
Z Source
2200
4.29
4.36
4.45
4.55
4.67
–8.14
–8.34
–8.53
–8.74
–8.95
1.49
–4.39
–4.50
–4.61
–4.72
–4.84
2170
1.52
1.55
1.58
1.62
2140
2110
2080
Data Sheet
5 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Reference Circuit
R803
1000 Ohm
S2
VGS1
8
4
1
Out
In
NC
6
NC
2
5
3
7
C105
10000000 pF
C802
1000 pF
3
C803
1000 pF
S3
2
R802
3
TL108
1200 Ohm
C801
1000 pF
1
2
3
C
R804
1000 Ohm
1
4
S
B
S1
E
R801
C106
10000 pF
1300 Ohm
R102
2000 Ohm
C102
10 pF
TL112
C104
TL101
TL111
TL110
TL109
2
1
1
2
3
1
2
1
2
3
TL107
3
3
TL105
C103
10000 pF
TL102
TL128
1000000 pF
R101
5100 Ohm
R103
10 Ohm
TL115
TL116
TL114
TL103
TL 113
TL106
TL104
3
2
1
C101
10 pF
TL126
TL124
TL120
TL125
TL122 TL117 TL129
TL 127 TL134
TL118 TL133
TL132
TL131
TL130
TL121
3
1
2
1
2
2
1
b
2
1
1
5
0
1
e
f
v−
4
_
b
d
i
n
_
1
1
−
1
8
−
2
0
0
9
RF IN
GATE DUT
3
3
TL119
TL123
C107
0.4 pF
C108
0.4 pF
Reference circuit input schematic for ƒ = 2170 MHz
TL234
TL222
TL242
TL225
TL219 TL237
TL235
TL241
TL230
TL231
TL228
TL238
1
2
1
2
1
2
1
2
3
3
3
3
VDD1
C205
20000pF
TL218
C204
C210
1000000pF 10000000pF
C207
10 pF
TL209
C202
10 pF
TL203
TL204
TL206
2
TL202
TL201
TL212
TL205
TL213
TL214
TL207 TL216
TL210
TL215
1
3
1
2
DRAIN DUT
RF OUT
3
4
TL211
C201
1.2 pF
TL208
C208
10 pF
C206
20000 pF
C203
1000000pF
C209
10000000pF
TL217
TL224
TL233
TL223
TL221
TL240 TL232
TL236 TL220
TL229
TL226
TL239
TL227
3
3
3
3
2
1
2
1
2
1
2
1
b
2
1
1
5
0
1
e
f
−
v
4
_
b
d
o
u
t
_
1
1
−
1
8
−
2
0
0
9
VDD2
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
6 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Reference Circuit (cont.)
VDD
C802
VDD
R801
C801
C106
C105
C803
S3
+
R102
R803
R804
C207
S2
S1
R802
R801
10 µF
C205
C204
R101
C104
C210
C103
C102
R103
C202
C201
C107
C101
C108
C209
C203
C206
µ F 1 0
C208
VDD
PTFB211501EF
PTFB211501EF
TMM4, .030
(62)
TMM4, .030
(62)
− 1 8 − 2 0 0 9
b
2
1
1
5
0
1
e
f
−
v
1
_
C
D
_
1
1
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
7 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Reference Circuit (cont.)
Circuit Assembly Information
DUT
PCB
PTFB211501E or PTFB211501F
LTN/PTFB211501EF
LDMOS Transistor
TMM4
0.76 mm [.030"] thick, e = 4.5
2 oz. copper
r
Component
Description
Suggested Manufacturer
P/N
Input
C101, C102
C103, C106
C104
Chip capacitor, 10 pF
Chip capacitor, 0.01 µF
Chip capacitor, 1 µF
Capacitor, 10 µF
Chip capacitor, 0.4 pF
Chip capacitor, 1000 pF
Resistor, 5100 W
Resistor, 2000 W
Resistor, 10 W
ATC
100B100JW500X
200B103MW50X
445-1411-2-ND
399-1655-2-ND
100B0R4CW500X
PCC1772CT-ND
P5.1KECT-ND
P2.0KECT-ND
P10ECT-ND
ATC
Digi-Key
C105
Digi-Key
C107, C108
C801, C802, C803
R101
ATC
Digi-Key
Digi-Key
R102
Digi-Key
R103
Digi-Key
R801
Resistor, 1300 W
Resistor, 1200 W
Resistor, 1000 W
Transistor
Digi-Key
P1.3KECT-ND
P1.2KECT-ND
P1.0KECT-ND
BCP56
R802
Digi-Key
R803, R804
S1
Digi-Key
Infineon Technologies
National Semiconductor
Digi-Key
S2
Voltage regulator
Potentiometer, 2k W
LM7805
S3
3224W-202ECT-ND
Output
C201
Chip capacitor, 1.2 pF
Chip capacitor, 10 pF
Chip capacitor, 1 µF
Chip capacitor, 0.02 µF
Chip capacitor, 10 pF
Capacitor, 10 µF
ATC
100B1R2CW500X
100B100JW500X
445-1411-2-ND
C202
ATC
C203, C204
C205, C206
C207, C208
C209, C210
Digi-Key
ATC
200B203MW50X
100B100JW500X
TPSE106K050R0400
ATC
Garrett Electronics
Data Sheet
8 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Line
Electrical
Dimensions: mm
Dimensions: mils
Characteristics
Input
TL101
0.041 l , 40.30 W
0.033 l , 65.15 W
0.027 l , 65.15 W
0.047 l , 65.15 W
0.000 l , 40.30 W
W1 = 2.032, W2 = 2.032, W3 = 3.048
W = 0.889, L = 2.540
W1 = 80, W2 = 80, W3 = 120
W = 35, L = 100
TL102
TL103
W1 = 0.889, W2 = 0.889, W3 = 2.032
W = 0.889, L = 3.556
W1 = 35, W2 = 35, W3 = 80
W = 35, L = 140
TL104
TL105
W = 2.032, L = 0.025
W = 80, L = 1
TL106, TL128
TL107
W = 0.889
W = 35
0.040 l , 53.88 W
0.089 l , 20.46 W
0.021 l , 30.35 W
0.035 l , 30.35 W
0.025 l , 65.15 W
0.012 l , 46.07 W
0.236 l , 65.15 W
W1 = 1.270, W2 = 1.270, W3 = 3.048
W1 = 5.080, W2 = 5.080, W3 = 6.350
W = 3.048, L = 1.524
W1 = 50, W2 = 50, W3 = 120
W1 = 200, W2 = 200, W3 = 50
W = 120, L = 60
TL108
TL109, TL112
TL110, TL111
TL113
W1 = 3.048, W2 = 3.048, W3 = 2.540
W = 0.889, L = 1.905
W1 = 120, W2 = 120, W3 = 100
W = 35, L = 75
TL114, TL115
TL116
W = 1.651, L = 0.889
W = 65, L = 35
W = 0.889, L = 18.034
W = 35, L = 710
TL117
W1 = 10.160, W2 = 17.780
W = 1.397, L = 13.970
W1 = 400, W2 = 700
W = 55, L = 550
TL118
0.186 l , 50.98 W
0.000 l , 40.30 W
0.014 l , 40.30 W
0.062 l , 6.87 W
0.020 l , 11.38 W
0.017 l , 34.60 W
0.155 l , 40.30 W
0.127 l , 50.98 W
0.013 l , 6.87 W
TL119, TL123
TL120
W = 2.032, L = 0.025
W = 80, L = 1
W = 2.032, L = 1.016
W = 80, L = 40
TL121
W = 17.780, L = 4.191
W = 700, L = 165
TL122
W = 10.160, L = 1.397
W = 400, L = 55
TL124, TL126
TL125
W = 2.540, L = 1.270
W = 100, L = 50
W = 2.032, L = 11.430
W = 80, L = 450
TL127
W = 1.397, L = 9.525
W = 55, L = 375
TL129
W1 = 17.780, W2 = 17.780, W3 = 0.889
W1 = 2.032, W2 = 10.160
W1 = 2.032, W2 = 2.032, W3 = 2.032
W1 = 2.540, W2 = 2.032
W1 = 1.397, W2 = 2.540
W1 = 1.397, W2 = 1.397, W3 = 2.032
W1 = 700, W2 = 700, W3 = 35
W1 = 80, W2 = 400
W1 = 80, W2 = 80, W3 = 80
W1 = 100, W2 = 80
W1 = 55, W2 = 100
W1 = 55, W2 = 55, W3 = 80
TL130
TL131
0.027 l , 40.30 W
0.027 l ,50.98 W
TL132
TL133
TL134
Data Sheet
9 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Line
Electrical
Dimensions: mm
Dimensions: mils
Characteristics
Output
TL201
0.027 l , 43.96 W
W1 = 1.778, W2 = 1.778, W3 = 2.032
W1 = 25.654, W2 = 21.107, L = 1.041
W1 = 21.107, W2 = 2.794, L = 3.937
W1 = 2.794, W2 = 1.778, L = 1.270
W1 = 1.778, W2 = 2.540
W1 = 2.540, W2 = 1.397
W = 25.654, L = 0.025
W1 = 70, W2 = 70, W3 = 80
W1 = 1010, W2 = 831, L = 41
W1 = 831, W2 = 110, L = 155
W1 = 110, W2 = 70, L = 50
W1 = 70, W2 = 100
W1 = 100, W2 = 55
W = 1010, L = 1
TL202 (taper)
TL203 (taper)
TL204 (taper)
TL205
0.016 l , 4.88 W / 5.86 W
0.058 l , 5.86 W / 32.33 W
0.017 l , 32.33 W / 43.96 W
TL206
TL207
0.000 l , 4.88 W
0.089 l , 53.88 W
0.028 l , 4.88 W
0.000 l , 40.30 W
0.089 l , 43.96 W
0.017 l , 34.60 W
0.378 l , 50.98 W
TL208, TL209
TL210
W = 1.270, L = 6.731
W = 50, L = 265
W = 25.654, L = 1.905
W = 1010, L = 75
TL211, TL217, TL218
TL212
W = 2.032, L = 0.025
W = 80, L = 1
W = 1.778, L = 6.604
W = 70, L = 260
TL213, TL214
TL215
W = 2.540, L = 1.270
W = 100, L = 50
W = 1.397, L = 28.423
W = 55, L = 1119
TL216
W1 = 25.654, W2 = 1.270, W3 = 25.654,
W4 = 1.270
W1 = 1010, W2 = 50, W3 = 1010,
W4 = 50
TL219, TL221
TL220, TL242
TL222, TL223
TL224, TL225
TL226, TL235
TL227, TL228
TL229, TL231
TL230, TL232
TL233, TL234
TL236, TL237
0.062 l , 53.88 W
0.065 l , 30.35 W
0.209 l , 53.88 W
W = 1.270, L = 4.699
W = 50, L = 185
W = 3.048, L = 4.699
W = 120, L = 185
W = 1.270, L = 15.748
W = 50, L = 620
W = 1.270
W = 50
W1 = 3.048, W2 = 9.144
W1 = 9.144, W2 = 9.144, W3 = 5.080
W1 = 9.144, W2 = 9.144, W3 = 3.048
W1 = 9.144, W2 = 9.144, W3 = 2.540
W1 = 1.270, W2 = 1.270, W3 = 2.032
W1 = 1.270, W2 = 3.048,
W = 9.144, L = 0.127
W1 = 120, W2 = 360
W1 = 360, W2 = 360, W3 = 200
W1 = 360, W2 = 360, W3 = 120
W1 = 360, W2 = 360, W3 = 100
W1 = 50, W2 = 50, W3 = 80
W1 = 50, W2 = 120
W = 360, L = 5
0.073 l , 12.48 W
0.044 l , 12.48 W
0.037 l , 12.48 W
0.027 l , 53.88 W
TL238, TL239,
TL240, TL241
0.002 l , 12.48 W
Data Sheet
10 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Package Outline Specifications
Package H-36248-2
C
L
45° X 2.720
[45° X .107]
4.826±0.510
[.190±0.020]
D
S
FLANGE 9.779
[.385]
+0.100
-0.150
LID 9.398
C
L
+0.004
.370
-0.006
19.431±0.510
[.765±0.020]
[
]
2X R1.626
[R.064]
G
4X R1.524
[R.060]
2X 12.700
[.500]
27.940
[1.100]
SPH 1.575
[.062]
1.016
[.040]
19.812±0.200
[.780±0.008]
3.632±0.380
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
0.0381 [.0015]
-A-
C
L
34.036
[1.340]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; S – source; G – gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.
Data Sheet
11 of 13
Rev. 03.1, 2016-06-14
PTFB211501E
PTFB211501F
Package Outline Specifications (cont.)
Package H-37248-2
[45° X .107]
+.381
4X R0.508
4.826±0.510
[.190±0.020]
-.127
D
+0.015
R.020
-0.005
[
]
+0.100
-0.150
LID 9.398
FLANGE 9.779
+0.004
19.431±0.510
[.765±0.020]
.370
-0.006
[
]
[.385]
G
2X 12.700
[.500]
SPH 1.575
[.062]
19.812±0.200
[.780±0.008]
1.016
[.040]
C66065-A2323-C001-01-0027_h-37248-2_11-11-09
0.0381 [.0015]
-A-
C
L
20.574
[.810]
S
3.632±0.380
[.143±0.015]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; S – source; G – gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 03.1, 2016-06-14
PTFB211501E/F V1
Confidential, Limited Internal Distribution
Revision History:
2016-06-14
Data Sheet
2012-10-15, Data Sheet
PreviousVersion:
Page
Subjects (major changes since last revision)
2
updated ordering information to include R0
We Listen toYour Comments
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Edition 2016-06-14
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 InfineonTechnologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
13 of 13
Rev. 03.1, 2016-06-14
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