PVD1352 [INFINEON]

Microelectronic Power IC PHOTOVOLTAIC RELAY SINGLE POLE 500MA 0-100V DC; 微电子电源IC光伏继电器单极500MA 0-100V直流


型号：	PVD1352
厂家：	Infineon
描述：	Microelectronic Power IC PHOTOVOLTAIC RELAY SINGLE POLE 500MA 0-100V DC 微电子电源IC光伏继电器单极500MA 0-100V直流光电继电器固态继电器输出元件电子
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中文：	中文翻译
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Data Sheet No. PD10024E

Replaced by PVD13N

Series PVD13

Microelectronic Power IC

BOSFET^®Photovoltaic Relay

Single-Pole, 500mA, 0-100V DC

General Description

Features

The Photovoltaic DC Relay (PVD) is a single-pole,

normally open solid state replacement for electro-

mechanical relays used for general purpose switch-

ing of analog signals. It utilizes as an output switch a

unique bidirectional (AC or DC) MOSFET power IC

termed a BOSFET. The BOSFET is controlled by a

photovoltaic generator of novel construction, which

is energized by radiation from a dielectrically iso-

lated light emitting diode (LED).

BOSFET Power IC

10¹⁰Operations

■

300µsec Operating Time

3 milliwatts Pick-Up Power

1000V/µsec dv/dt

Bounce-Free

8-pin DIP Package

-40°C to 85°C

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operat-

ing speed, low pick-up power, bounce-free opera-

tion, low thermal voltages and miniaturization. These

advantages allow product improvement and design

innovations in many applications such as process

control, multiplexing, telecommunications, automatic

test equipment and data acquisition.

UL recognized

The PVD can switch analog signals from thermo-

couple level to 100 volts peak DC. Signal frequen-

cies into the RF range are easily controlled and

switching rates up to 2kHz are achievable. The ex-

tremely small thermally generated offset voltages

allow increased measurement accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD. The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate pro-

tection functions. This section of the BOSFET chip

utilizes both bipolar and MOS technology to form

NPN transistors, P-channel MOSFETs, resistors, di-

odes and capacitors.

Part Identification

Part Number

PVD1352

PVD1354

Operating

Sensitivity

Off-State

Resistance

10⁸Ohms

Voltage (DC)

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this

technique results in the very fast response of the

PVD microelectronic power IC relay.

0 – 100V

5 mA

10¹⁰Ohms

This advanced semiconductor technology has cre-

ated a radically new control device. Designers can

now develop switching systems to new standards of

electrical performance and mechanical compactness.

(BOSFET is a trademark of International Rectifier)

SeriesPVD13

Replaced by PVD13N

Electrical Specifications (-40°C ≤ T_A≤ +85°C unless otherwise specified)

INPUT CHARACTERISTICS

PVD1352

PVD1354

Units

Minimum Control Current (see figures 1 and 2)

For 300mA Continuous Load Current

For 400mA Continuous Load Current

For 150mA Continuous Load Current

2.0

5.0

mA@25°C

mA@40°C

mA@85°C

Maximum Control Current for Off-State Resistance at 25°C

Control Current Range (Caution: current limit input LED. See figure 6)

Maximum Reverse Voltage

µA(DC)

mA(DC)

V(DC)

2.0 to 25

7.0

OUTPUT CHARACTERISTICS

PVD1352

PVD1354

Units

Operating Voltage Range

0 to + 100

500

V_(PEAK)

Maxiumum Load Current 40°C (see figures 1and 2)

Response Time @25°C (see figures 7 and 8)

mA(DC)

Max. T

@ 12mA Control, 50 mA Load, 100 VDC

300

µs

(on)

(off)

µs

Max. On-state Resistance 25°C (Pulsed) (fig. 4) 200 mA Load, 5mA Control

Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)

Max. Thermal Offset Voltage @ 5.0mA Control

Min. Off-State dv/dt

1.5

Ω

10⁸

10¹⁰

0.2

1000

µvolts

V/µs

Output Capacitance

pF @ 50VDC

GENERAL CHARACTERISTICS (PVD1352 and PVD1354)

Dielectric Strength: Input-Output

Units

V_RMS

Ω

2500

Insulation Resistance: Input-Output @ 90V_DC

Maximum Capacitance: Input-Output

10¹²@ 25°C - 50% RH

1.0

Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)

+260

Ambient Temperature Range:

Operating

Storage

-40 to +85

-40 to +100

°C

SeriesPVD13

Replaced by PVD13N

(mA)

Ambient Temperature (°C)

LED

Figure 1. Current Derating Curves

Figure 2.Typical Control Current Requirements

Ambient Temperature (°C)

(Volts)

Figure 4.Typical Normalized On-Resistance

Figure 3.Typical On Characteristics

SeriesPVD13

Replaced by PVD13N

LED Forward Voltage Drop (Volts DC)

Ambient Temperature (°C)

Figure 5. Normalized Off-State Leakage

Figure 6. Input Characteristics

(Current Controlled)

Delay Time (microseconds)

Figure 7.Typical Delay Times

Figure 8. DelayTime Definitions

SeriesPVD13

Replaced by PVD13N

Ambient Temperature °C

Drain to Source Voltage

Figure 9.Typical ControlThreshold andTransfer Ratio

Figure 10.Typical Output Capacitance

Wiring Diagram

SeriesPVD13

Replaced by PVD13N

Case Outline

(Dimensions in millimeters (inches))

Mechanical Specifications:

Package: 8-pin DIP

Tolerances: .015 (.38) unless otherwise specified

Case Material: molded epoxy

Weight: .07 oz. (2 gr.)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

http://www.irf.com/

Data and specifications subject to change without notice. 12/6/2000

PVD1352 [INFINEON]

相关型号：

PVD1352N

PVD1352NPBF

PVD1352NS

PVD1352NSPBF

PVD1354

PVD1354N

PVD1354NPBF

PVD1354NS

PVD1354NSPBF

PVD13N

PVD13NPBF

PVD13NPBF_15